摘要:
A method of laser forward transfer is disclosed. Photo energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.
摘要:
A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by a polymer interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.
摘要:
A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by an interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.
摘要:
A method of laser forward transfer is disclosed. Photon energy is directed through a photon-transparent support and absorbed by a polymer interlayer coated thereon. The energized interlayer causes the transfer of a biological material coated thereon across a gap and onto a receiving substrate.
摘要:
The invention relates to the deposition of transparent conducting thin films, such as transparent conducting oxides (TCO) such as tin doped indium oxide (ITO) and aluminum doped zinc oxide (AZO) on flexible substrates by pulsed laser deposition. The coated substrates are used to construct low cost, lightweight, flexible displays based on organic light emitting diodes (OLEDs).
摘要:
The invention relates to the deposition of transparent conducting thin films, such as transparent conducting oxides (TCO) such as tin doped indium oxide (ITO) and aluminum doped zinc oxide (AZO) on flexible substrates by pulsed laser deposition. The coated substrates are used to construct low cost, lightweight, flexible displays based on organic light emitting diodes (OLEDs).
摘要:
This invention pertains to a device of a substrate and a ZrO2-based semiconductor disposed thereon and a method for depositing the semiconductor on the substrate. The semiconductor is typically in the form of a film of 1-20 weight % ZrO2 and 99-80 weight % In2O3 or SnO2 . The semiconductor is tunable in terms of optical transmission and electrical conductivity. Its transmission is in excess of about 80% over the wavelength range of 400-900 nm and its resistivity is from about 1.3×10−3 &OHgr;-cm to about 6.5×10−2 &OHgr;-cm. The deposition method is characterized by depositing in a chamber the semiconductor on a substrate by means of a physical vapor deposition whole maintaining a small oxygen pressure in the chamber.