Zirconia-containing transparent and conducting oxides
    7.
    发明授权
    Zirconia-containing transparent and conducting oxides 失效
    含氧化锆的透明和导电氧化物

    公开(公告)号:US06246071B1

    公开(公告)日:2001-06-12

    申请号:US09404722

    申请日:1999-09-23

    IPC分类号: H01L2912

    CPC分类号: H01L29/221

    摘要: This invention pertains to a device of a substrate and a ZrO2-based semiconductor disposed thereon and a method for depositing the semiconductor on the substrate. The semiconductor is typically in the form of a film of 1-20 weight % ZrO2 and 99-80 weight % In2O3 or SnO2 . The semiconductor is tunable in terms of optical transmission and electrical conductivity. Its transmission is in excess of about 80% over the wavelength range of 400-900 nm and its resistivity is from about 1.3×10−3 &OHgr;-cm to about 6.5×10−2 &OHgr;-cm. The deposition method is characterized by depositing in a chamber the semiconductor on a substrate by means of a physical vapor deposition whole maintaining a small oxygen pressure in the chamber.

    摘要翻译: 本发明涉及一种基板和设置在其上的基于ZrO 2的半导体的器件以及用于在衬底上沉积半导体的方法。 半导体通常为1-20重量%ZrO 2和99-80重量%In 2 O 3或SnO 2的膜的形式。 半导体在光传输和导电性方面是可调谐的。 其透射率在400-900nm的波长范围内超过约80%,其电阻率为约1.3x10-3欧姆 - 厘米至约6.5×10-2欧米加 - 厘米。 沉积方法的特征在于通过在室中保持小的氧气压力的物理气相沉积在室中沉积半导体。