公开(公告)号：US09470650B2

公开(公告)日：2016-10-18

申请号：US13880566

申请日：2011-10-20

申请人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

发明人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

IPC分类号： G01N27/414

CPC分类号： G01N27/414 ,  G01N27/4141

摘要： Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.

摘要翻译： 用于在化学环境中感测/测量一种或多种分析物的传感器。 每个传感器基于具有包含二维电子气（2DEG）的界面区域的半导体结构。 对分析物反应的催化剂与半导体结构接触。 通过催化剂从分析物中剥离的颗粒在催化剂和结构之间的界面处钝化半导体结构的表面，从而导致靠近催化剂的2DEG中的电荷密度改变。 当将该基本结构并入诸如高电子迁移率晶体管（HEMT）或肖特基二极管的电子器件中时，电荷密度的变化表现为器件的电响应的变化。 例如，在HEMT中，电荷密度的变化表现为通过晶体管的电流的变化，并且在肖特基二极管中，电荷密度的变化表现为电容的变化。

公开(公告)号：US20130288378A1

公开(公告)日：2013-10-31

申请号：US13880566

申请日：2011-10-20

申请人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

发明人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

IPC分类号： G01N27/414

CPC分类号： G01N27/414 ,  G01N27/4141

摘要： Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.

摘要翻译： 用于在化学环境中感测/测量一种或多种分析物的传感器。 每个传感器基于具有包含二维电子气（2DEG）的界面区域的半导体结构。 对分析物反应的催化剂与半导体结构接触。 通过催化剂从分析物中剥离的颗粒在催化剂和结构之间的界面处钝化半导体结构的表面，从而导致靠近催化剂的2DEG中的电荷密度改变。 当将该基本结构并入诸如高电子迁移率晶体管（HEMT）或肖特基二极管的电子器件中时，电荷密度的变化表现为器件的电响应的变化。 例如，在HEMT中，电荷密度的变化表现为通过晶体管的电流的变化，并且在肖特基二极管中，电荷密度的变化表现为电容的变化。

公开(公告)号：US09207177B2

公开(公告)日：2015-12-08

申请号：US14040173

申请日：2013-09-27

申请人： Jason Gu ,  Peter C. Foller ,  Jacob Melby

发明人： Jason Gu ,  Peter C. Foller ,  Jacob Melby

IPC分类号： G01N21/64 ,  G01N31/22 ,  G01N33/18 ,  G01N21/78 ,  G01N21/63 ,  G01N21/75

CPC分类号： G01N21/643 ,  G01N21/64 ,  G01N21/6428 ,  G01N21/78 ,  G01N31/22 ,  G01N33/18 ,  G01N33/182 ,  Y10T436/19 ,  Y10T436/193333

摘要： Methods and systems to determine a concentration of bromide ions in an aqueous sample are disclosed. The method involves the oxidation of bromide ions to bromine, followed by bromination of a colored or fluorescent reporter compound which may be detected by spectrophotometric means. The relative change in color or fluorescence upon bromine binding to the reporter compound may then be used to determine a quantitative concentration of bromide ions in the sample. The system utilizes a photocatalytic coating in a sample chamber, a source of reporter compound in fluid communication with the sample chamber, light sources that may activate the photocatalyst and excite the reporter compound, an optical detection unit capable of receiving a light signal from the second light source after it has passed through the sample chamber, and various pumps, valves or injection syringes that regulate the flow of sample and reporter compound into and out of the sample chamber.

摘要翻译： 公开了确定水样品中溴离子浓度的方法和系统。 该方法涉及将溴离子氧化成溴，然后溴化有色或荧光的报告化合物，其可通过分光光度法检测。 然后可以使用溴与报告化合物结合的颜色或荧光的相对变化来确定样品中溴离子的定量浓度。 该系统在样品室中使用光催化涂层，与样品室流体连通的报告物化合物源，可以激活光催化剂并激发报告化合物的光源，能够接收来自第二个的光信号的光学检测单元 光源通过样品室后，以及调节样品和报道物化合物进出样品室的流量的各种泵，阀或注射器。

公开(公告)号：US20140087476A1

公开(公告)日：2014-03-27

申请号：US14040173

申请日：2013-09-27

申请人： Jason Gu ,  Peter C. Foller ,  Jacob Melby

发明人： Jason Gu ,  Peter C. Foller ,  Jacob Melby

IPC分类号： G01N21/64

CPC分类号： G01N21/643 ,  G01N21/64 ,  G01N21/6428 ,  G01N21/78 ,  G01N31/22 ,  G01N33/18 ,  G01N33/182 ,  Y10T436/19 ,  Y10T436/193333

摘要： Methods and systems to determine a concentration of bromide ions in an aqueous sample are disclosed. The method involves the oxidation of bromide ions to bromine, followed by bromination of a colored or fluorescent reporter compound which may be detected by spectrophotometric means. The relative change in color or fluorescence upon bromine binding to the reporter compound may then be used to determine a quantitative concentration of bromide ions in the sample. The system utilizes a photocatalytic coating in a sample chamber, a source of reporter compound in fluid communication with the sample chamber, light sources that may activate the photocatalyst and excite the reporter compound, an optical detection unit capable of receiving a light signal from the second light source after it has passed through the sample chamber, and various pumps, valves or injection syringes that regulate the flow of sample and reporter compound into and out of the sample chamber.

摘要翻译： 公开了确定水样品中溴离子浓度的方法和系统。 该方法涉及将溴离子氧化成溴，然后溴化有色或荧光的报告化合物，其可通过分光光度法检测。 然后可以使用溴与报告化合物结合的颜色或荧光的相对变化来确定样品中溴离子的定量浓度。 该系统在样品室中使用光催化涂层，与样品室流体连通的报告物化合物源，可以激活光催化剂并激发报告化合物的光源，能够接收来自第二个的光信号的光学检测单元 光源通过样品室后，以及调节样品和报道物化合物进出样品室的流量的各种泵，阀或注射器。

公开(公告)号：US20140061637A1

公开(公告)日：2014-03-06

申请号：US14013489

申请日：2013-08-29

申请人： Jason Gu

发明人： Jason Gu

IPC分类号： H01L29/24

CPC分类号： H01L29/24 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53247 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic device of the type wherein a semiconductor stack is functionally supported by interconnects, electrical contacts and dielectric materials. The interconnects and electrical contacts are composed of iridium, ruthenium, zirconium, niobium, tantalum, rhodium, chromium, nickel, palladium, osmium, platinum, titanium, silver and their alloys. The dielectric materials are formed of mixtures of titanium oxide, zirconium oxide, iridium oxide, silver oxide, ruthenium oxide, and niobium oxide. An adhesion layer may be formed of ruthenium, nickel, iridium, zirconium, titanium, chromium, and alloys thereof

摘要翻译： 这种类型的电子器件，其中半导体叠层在功能上由互连，电触点和电介质材料支撑。 互连和电触点由铱，钌，锆，铌，钽，铑，铬，镍，钯，锇，铂，钛，银及其合金组成。 介电材料由氧化钛，氧化锆，氧化铱，氧化银，氧化钌和氧化铌的混合物形成。 粘合层可以由钌，镍，铱，锆，钛，铬及其合金形成