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    CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME
    1.
    发明申请
    CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME 有权
    CMOS集成微机电谐振器及其制造方法

    公开(公告)号：US20110101475A1

    公开(公告)日：2011-05-05

    申请号：US13000650

    申请日：2009-06-26

    申请人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    发明人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    IPC分类号： H01L29/84 ,  H01L21/77

    CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    摘要： The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

    摘要翻译： 本发明涉及根据标准CMOS铸造制造工艺制造的CMOS集成微机械装置。 标准CMOS铸造制造工艺的特征在于预定的层图和预定的制造规则集合。 该器件包括根据预定层图形成或提供的半导体衬底以及预定的一组制造规则。 根据预定层图和预定的制造规则集合制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于约20平方微米的表面积的微机械谐振器结构。 至少一个CMOS电路耦合到MEMS谐振器构件。 至少一个CMOS电路也是根据预定的层映射和预定的一组制造规则制造的。

    CMOS integrated micromechanical resonators and methods for fabricating the same
    2.
    发明授权
    CMOS integrated micromechanical resonators and methods for fabricating the same 有权
    CMOS集成微机械谐振器及其制造方法

    公开(公告)号：US08704315B2

    公开(公告)日：2014-04-22

    申请号：US13000650

    申请日：2009-06-26

    申请人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    发明人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    IPC分类号： H01L29/82

    CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    摘要： The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

    摘要翻译： 本发明涉及根据标准CMOS铸造制造工艺制造的CMOS集成微机械装置。 标准CMOS铸造制造工艺的特征在于预定的层图和预定的制造规则集合。 该器件包括根据预定层图形成或提供的半导体衬底以及预定的一组制造规则。 根据预定层图和预定的制造规则集合制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于约20平方微米的表面积的微机械谐振器结构。 至少一个CMOS电路耦合到MEMS谐振器构件。 至少一个CMOS电路也是根据预定的层映射和预定的一组制造规则制造的。

    Method for making a transducer, transducer made therefrom, and applications thereof
    3.
    发明授权
    Method for making a transducer, transducer made therefrom, and applications thereof 有权
    用于制造换能器，由其制成的换能器的方法及其应用

    公开(公告)号：US08174352B2

    公开(公告)日：2012-05-08

    申请号：US13000644

    申请日：2009-06-26

    申请人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    发明人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    IPC分类号： G01L1/22

    CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    摘要： A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

    摘要翻译： 制造或制备薄膜叠层的方法，其显示中等的，有限的，受应力依赖的电阻，并且可以结合到转导机构中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。 当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。 通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。 因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。 还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。

    METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF
    4.
    发明申请
    METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF 有权
    制造传感器的方法，其制造的传感器及其应用

    公开(公告)号：US20110121937A1

    公开(公告)日：2011-05-26

    申请号：US13000644

    申请日：2009-06-26

    申请人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    发明人： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

    IPC分类号： G01L1/22 ,  G01R3/00

    CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

    摘要： A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

    摘要翻译： 一种用于制造或制备薄膜叠层的方法，其表现出适度的，有限的应力依赖性电阻，并且可以结合到转导机构中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。 当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。 通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。 因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。 还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。