公开(公告)号：US6107166A

公开(公告)日：2000-08-22

申请号：US924725

申请日：1997-08-29

申请人： Jeffery W. Butterbaugh ,  Herbert H. Sawin ,  Zhe Zhang ,  Yong-Pil Han

发明人： Jeffery W. Butterbaugh ,  Herbert H. Sawin ,  Zhe Zhang ,  Yong-Pil Han

IPC分类号： H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02049 ,  Y10S438/906

摘要： A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

摘要翻译： 从半导体衬底的表面去除I族或II族金属物质的方法。 该方法包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。 本发明还涉及一种用于从半导体衬底中蚀刻氧化物的方法，包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。

公开(公告)号：US06740247B1

公开(公告)日：2004-05-25

申请号：US09498303

申请日：2000-02-04

申请人： Yong-Pil Han ,  Herbert H. Sawin

发明人： Yong-Pil Han ,  Herbert H. Sawin

IPC分类号： B44C122

CPC分类号： H01L21/02049 ,  H01L21/31116

摘要： The invention provides HF vapor process conditions that can be precisely controlled with a high degree of reproducibility for a wide range of starting wafer conditions. These HF vapor processes for, e.g., etching oxide on a semiconductor substrate, cleaning a contaminant on a semiconductor substrate, removing etch residue from a metal structure on a semiconductor substrate, and cleaning a metal contact region of a semiconductor substrate. In the HF vapor process, a semiconductor substrate having oxide, a contaminant, metal etch residue, or a contact region to be processed is exposed to hydrofluoric acid vapor and water vapor in a process chamber held at temperature and pressure conditions that are controlled to form on the substrate no more than a sub-monolayer of etch reactants and products produced by the vapor as the substrate is processed by the vapor. The sub-monolayer HF vapor process regime is defined in accordance with the invention to proceed under conditions wherein no more than about 95% of a monolayer of coverage of the substrate surface occurs.

摘要翻译： 本发明提供可以在宽范围的起始晶片条件下以高重现性精确地控制的HF蒸汽工艺条件。 这些HF蒸气处理用于例如在半导体衬底上蚀刻氧化物，清洁半导体衬底上的污染物，从半导体衬底上的金属结构去除蚀刻残留物，以及清洁半导体衬底的金属接触区域。 在HF蒸气工艺中，具有氧化物，污染物，金属蚀刻残渣或待加工的接触区域的半导体衬底暴露于保持在受控制形成的温度和压力条件下的处理室中的氢氟酸蒸气和水蒸汽 在基底上不超过蚀刻反应物的亚单层和由蒸气产生的产物，因为基底被蒸气处理。 根据本发明定义亚单层HF蒸气过程方案，其条件是在不超过约95％的单层覆盖衬底表面的情况下进行。

公开(公告)号：US20050003669A1

公开(公告)日：2005-01-06

申请号：US10850693

申请日：2004-05-21

申请人： Yong-Pil Han ,  Herbert Sawin

发明人： Yong-Pil Han ,  Herbert Sawin

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02049 ,  H01L21/31116

摘要： HF vapor processes are provided for etching oxide on a semiconductor substrate, cleaning a substrate, or cleaning a metal structure on a substrate. In the processes, a semiconductor substrate to be cleaned or having oxide to be etched is exposed to anhydrous hydrofluoric acid vapor and water vapor at a substrate temperature greater than about 40° C. Control of substrate temperature, hydrofluoric acid vapor pressure and water vapor pressure inhibits formation of liquid on the substrate and forms on the substrate a sub-monolayer of etch reactant and product molecules by adsorption of etch reactant and product molecules at less than about 95% of oxide adsorption sites.

摘要翻译： 为半导体衬底上的氧化物蚀刻提供HF蒸汽处理，清洗衬底或清洗衬底上的金属结构。 在这些工艺中，待被清洗或具有待蚀刻氧化物的半导体衬底在大于约40℃的衬底温度下暴露于无水氢氟酸蒸汽和水蒸汽。控制衬底温度，氢氟酸蒸气压和水蒸气压 抑制底物上的液体形成并通过在小于约95％的氧化物吸附位点吸附蚀刻反应物和产物分子，在衬底上形成蚀刻反应物和产物分子的亚单层。

公开(公告)号：US20080277767A1

公开(公告)日：2008-11-13

申请号：US12219201

申请日：2008-07-17

申请人： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

发明人： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

IPC分类号： H01L21/306 ,  H01L23/58 ,  H01L21/76

CPC分类号： H01L21/76224

摘要： A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material layer and an oxide layer are subsequently formed on the substrate, filling the trench region. Chemical mechanical polishing (CMP) is performed on the oxide layer until the medium material layer is exposed. CMP is then performed until the patterned etch stop layer is exposed and a planarized oxide layer is formed. Because the medium material layer has a higher removal rate during CMP than the oxide layer, occurrences of the dishing phenomenon are reduced. A slurry including an anionic surfactant is used to increase the CMP removal ratio of the medium material layer to the oxide layer.

公开(公告)号：US07413959B2

公开(公告)日：2008-08-19

申请号：US10419076

申请日：2003-04-21

申请人： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

发明人： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

IPC分类号： H01L21/00

CPC分类号： H01L21/76224

摘要： A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material layer and an oxide layer are subsequently formed on the substrate, filling the trench region. Chemical mechanical polishing (CMP) is performed on the oxide layer until the medium material layer is exposed. CMP is then performed until the patterned etch stop layer is exposed and a planarized oxide layer is formed. Because the medium material layer has a higher removal rate during CMP than the oxide layer, occurrences of the dishing phenomenon are reduced. A slurry including an anionic surfactant is used to increase the CMP removal ratio of the medium material layer to the oxide layer.

摘要翻译： 平面化半导体衬底的表面以减少凹陷现象的发生的方法。 限定沟槽区域的图案化蚀刻停止层形成在衬底上。 蚀刻衬底以形成沟槽区域，随后在衬底上形成介质材料层和氧化物层，填充沟槽区域。 在氧化物层上进行化学机械抛光（CMP），直到介质材料层露出。 然后执行CMP直到图案化的蚀刻停止层被暴露并且形成平坦化的氧化物层。 由于介质材料层在CMP期间具有比氧化物层更高的去除率，所以凹陷现象的发生减少。 使用包含阴离子表面活性剂的浆料来提高介质材料层与氧化物层的CMP去除率。