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公开(公告)号：US6107166A
公开(公告)日：2000-08-22
申请号：US924725
申请日：1997-08-29
IPC分类号： H01L21/306 , H01L21/322
CPC分类号： H01L21/02049 , Y10S438/906
摘要： A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.
摘要翻译： 从半导体衬底的表面去除I族或II族金属物质的方法。 该方法包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。 本发明还涉及一种用于从半导体衬底中蚀刻氧化物的方法，包括将表面暴露于包含HF，第二化合物和硅烷化合物的气态反应物混合物中，并从表面除去挥发性产物。
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公开(公告)号：US09059104B2
公开(公告)日：2015-06-16
申请号：US13312148
申请日：2011-12-06
IPC分类号： B44C1/22 , H01L21/311 , H01L21/67
CPC分类号： H01L21/31111 , H01L21/67051 , H01L21/6708
摘要： A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.
摘要翻译： 从衬底选择性地去除氮化硅的方法包括在其表面上提供具有氮化硅的衬底; 并在高于约150℃的温度下将磷酸和硫酸作为混合酸液体流分配到基材表面上。在该方法中，将水加入混合酸液体液体的液体溶液中 混合酸液体液体的液体溶液通过喷嘴。
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公开(公告)号：US20080006303A1
公开(公告)日：2008-01-10
申请号：US11825508
申请日：2007-07-06
IPC分类号： B08B3/00
CPC分类号： B08B3/02 , B05B7/0853 , H01L21/02052 , H01L21/67051
摘要： Particles are removed from a surface of a substrate by a method comprising causing liquid aerosol droplets comprising water and a tensioactive compound to contact the surface with sufficient force to remove particles from the surface.
摘要翻译： 通过包括使包含水和张力活性化合物的液体气雾剂液滴以足够的力与表面接触以从表面除去颗粒的方法从基材表面除去颗粒。
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公开(公告)号：US06465374B1
公开(公告)日：2002-10-15
申请号：US09482222
申请日：2000-01-13
IPC分类号： H01L2100
CPC分类号： H01L21/02046 , C23C16/481 , H01L21/67115 , Y10S438/906 , Y10S977/841
摘要： A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the absence of ultraviolet radiation to remove contaminants therefrom.
摘要翻译： 通过暴露于基本上不含卤素化学品的紫外线辐射来加热半导体衬底，随后在不存在紫外线辐射的情况下暴露于含卤素气体以除去其中的污染物。
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公开(公告)号：US5716495A
公开(公告)日：1998-02-10
申请号：US621538
申请日：1996-03-25
IPC分类号： C30B33/12 , B08B7/00 , C03C15/00 , C03C23/00 , C23C16/02 , C23F1/12 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/32 , B44C1/22 , C03C25/06
CPC分类号： H01L21/02046 , B08B7/0057 , C03C15/00 , C03C23/002 , C23C16/0236 , H01L21/02063 , H01L21/31116 , H01L21/32
摘要： A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.
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公开(公告)号：US08920577B2
公开(公告)日：2014-12-30
申请号：US12873635
申请日：2010-09-01
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/6708
摘要： A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.
摘要翻译： 处理基材的方法在一个方面包括将其表面上具有材料的基材放置在处理室中; 引导液体处理组合物流冲击基底表面; 并引导水蒸汽流冲击基底表面和/或冲击液体处理组合物。 本发明的优选方面是从基底去除材料，优选光致抗蚀剂，其中处理组合物是包含硫酸和/或其干燥物质和前体的液体硫酸组合物。
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公开(公告)号：US20120145672A1
公开(公告)日：2012-06-14
申请号：US13312148
申请日：2011-12-06
IPC分类号： B44C1/22
CPC分类号： H01L21/31111 , H01L21/67051 , H01L21/6708
摘要： A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.
摘要翻译： 从衬底选择性地去除氮化硅的方法包括在其表面上提供具有氮化硅的衬底; 并在高于约150℃的温度下将磷酸和硫酸作为混合酸液体流分配到基材表面上。在该方法中，将水加入混合酸液体液体的液体溶液中 混合酸液体液体的液体溶液通过喷嘴。
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公开(公告)号：US20080283090A1
公开(公告)日：2008-11-20
申请号：US12152641
申请日：2008-05-15
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/6708
摘要： A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or a optionally nitrogen gas environment during the treatment steps.
摘要翻译： 处理基材的方法在一个方面包括将其表面上具有材料的基材放置在处理室中; 引导液体处理组合物流冲击基底表面; 并引导水蒸汽流冲击基底表面和/或冲击液体处理组合物。 本发明的一个优选的方面是从基底去除材料，优选光刻胶，其中处理组合物是包含硫酸和/或其干燥物质和前体的液体硫酸组合物。 在另一方面，包含硫酸和/或其干燥物质和前体的液体硫酸组合物以有效处理基材部分的量分配到基材表面的小于基材整个表面的部分上 表面，并且液体硫酸组合物暴露于水蒸汽中，其量有效地将液体硫酸组合物的温度升高到暴露于水蒸气之前的液体硫酸组合物的温度以上。 在处理步骤期间，基底可以被水蒸气和/或任选的氮气环境包围。
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公开(公告)号：US5534107A
公开(公告)日：1996-07-09
申请号：US292359
申请日：1994-08-18
IPC分类号： C30B33/12 , B08B7/00 , C03C15/00 , C03C23/00 , C23C16/02 , C23F1/12 , C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/32 , H01L21/00 , B44C1/22
CPC分类号： H01L21/32 , B08B7/0057 , C03C15/00 , C03C23/002 , C23C16/0236 , H01L21/02046 , H01L21/02063 , H01L21/31116
摘要： A UV light-enhanced process for rapidly stripping films of silicon nitride in a dry reaction environment, which may be free of plasma or plasma effluents. This process is carried out in a sealed reactor which allows simultaneous exposure of a substrate wafer to a polyatomic fluorine containing gas which can be photodissociated by UV radiation to produce atomic fluorine and to UV radiation. Silicon nitride stripping rates in excess of 500 .ANG./min are readily obtainable with UV-stimulated fluorine-based processes, while maintaining the bulk wafer temperature below 300.degree. C. Selectivities for silicon nitride-to-silicon oxide etching of greater than 30 can be achieved for the stripping of silicon nitride LOCOS mask layers in the presence of field oxide and pad oxide layers when a chlorine or bromine containing gas which can be photodissociated by UV radiation to produce atomic chlorine or bromine is used in mixture with the fluorine containing gas. Selectivity and etch rate are controlled through UV lamp exposure, substrate temperature, and additions of nitrogen diluent, and photodissociable chlorine or bromine containing gases. The process addresses many of the limitations of plasma-downstream etch tools for dry silicon nitride stripping, including complete elimination of charged particles and sputtered contaminants associated with plasma effluents.
摘要翻译： 用于在干燥反应环境中快速剥离氮化硅膜的UV光增强方法，其可以不含等离子体或等离子体流出物。 该过程在密封的反应器中进行，其允许将衬底晶片同时暴露于可以通过UV辐射光分解以产生原子氟和UV辐射的多原子含氟气体。 超过500安培/分钟的氮化硅剥离速率可以通过紫外线刺激的氟基方法获得，同时保持体晶片温度低于300℃。大于30的氮化硅 - 氧化硅蚀刻的选择性可以是 在含氟气体的混合物中使用含有氯或溴的气体时，通过紫外线辐照而产生原子氯或溴，可以在存在场氧化物和氧化层的情况下，剥离氮化硅LOCOS掩模层。 选择性和蚀刻速率通过紫外线灯曝光，底物温度和氮稀释剂以及光分解的含氯或溴的气体进行控制。 该过程解决了用于干式氮化硅剥离的等离子体 - 下游蚀刻工具的许多限制，包括完全消除带电粒子和与等离子体流出物相关的溅射污染物。
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公开(公告)号：US20100326477A1
公开(公告)日：2010-12-30
申请号：US12873635
申请日：2010-09-01
IPC分类号： B08B3/00
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/6708
摘要： A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or an optionally nitrogen gas environment during the treatment steps.
摘要翻译： 处理基材的方法在一个方面包括将其表面上具有材料的基材放置在处理室中; 引导液体处理组合物流冲击基底表面; 并引导水蒸汽流冲击基底表面和/或冲击液体处理组合物。 本发明的一个优选的方面是从基底去除材料，优选光刻胶，其中处理组合物是包含硫酸和/或其干燥物质和前体的液体硫酸组合物。 在另一方面，包含硫酸和/或其干燥物质和前体的液体硫酸组合物以有效处理基材部分的量分配到基材表面的小于基材整个表面的部分上 表面，并且液体硫酸组合物暴露于水蒸汽中，其量有效地将液体硫酸组合物的温度升高到暴露于水蒸气之前的液体硫酸组合物的温度以上。 在处理步骤期间，基底可以被水蒸气和/或任选的氮气环境包围。
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