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公开(公告)号：US06355564B1
公开(公告)日：2002-03-12
申请号：US09384080
申请日：1999-08-26
IPC分类号： H01L2166
CPC分类号： G01R31/311 , G01N1/32 , H01L21/3065
摘要： According to an example embodiment, a semiconductor device having a back side and a circuit side opposite the back side is analyzed. The semiconductor device includes bulk silicon in the back side and also includes epitaxial silicon. An ion gas comprising SF6 and N2 is directed at a target region in the back side. Using the ion gas, the target region in the back side is selectively etched using reactive ion etching (RIE) and an exposed region is formed. The etching is selective to the bulk silicon. When the etching process encounters the epitaxial silicon, the etch rate slows and is used as an endpoint indicator of the selective etching process. Once the etching process is stopped, the circuitry is accessed via the exposed region.
摘要翻译： 根据示例性实施例，分析了具有背侧和与背面相反的电路侧的半导体器件。 半导体器件包括背面的体硅，并且还包括外延硅。 包含SF 6和N 2的离子气体指向后侧的目标区域。 使用离子气体，使用反应离子蚀刻（RIE）来选择性地蚀刻后侧的目标区域，并且形成暴露区域。 蚀刻对体硅有选择性。 当蚀刻工艺遇到外延硅时，蚀刻速率减慢并被用作选择性蚀刻工艺的端点指示器。 一旦蚀刻过程停止，电路就通过暴露的区域被访问。
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公开(公告)号：US06294395B1
公开(公告)日：2001-09-25
申请号：US09383791
申请日：1999-08-26
IPC分类号： H01L2166
CPC分类号： G01R31/316 , G01R31/2886 , G01R31/311
摘要： Current reactive ion etching (RIE) techniques are not applicable to back side etching of semiconductor devices. According to an example embodiment, the present invention is directed to a method for analyzing a semiconductor device having a back side and a circuit side opposite the back side. An ion gas including SF6 and N2 is directed at a target region in the back side. Using the ion gas, the target region is etched using reactive ion etching (RIE). An exposed region is formed, and circuitry in the device is accessed via the exposed region. The use of the ion gas enables back side RIE that is capable of producing an etched surface that is usable for back side access.
摘要翻译： 电流反应离子蚀刻（RIE）技术不适用于半导体器件的背面蚀刻。 根据示例性实施例，本发明涉及一种用于分析具有背侧和与背面相反的电路侧的半导体器件的方法。 包括SF 6和N 2的离子气体指向背面的目标区域。 使用离子气体，使用反应离子蚀刻（RIE）蚀刻靶区域。 形成暴露区域，并且经由暴露区域访问器件中的电路。 使用离子气体能够实现能够产生可用于背面进入的蚀刻表面的背面RIE。
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公开(公告)号：US08419557B2
公开(公告)日：2013-04-16
申请号：US12845980
申请日：2010-07-29
申请人： Matthew Thayer
发明人： Matthew Thayer
CPC分类号： A63G21/18 , A63G31/007 , E02D5/80
摘要： The present disclosure provides a waterslide that may include a flexible slide portion and an anchor portion. The anchor portion may secure the slide portion to a surface and may include a tab element, a stake element, and an adhesive element.
摘要翻译： 本公开提供了可以包括柔性滑动部分和锚固部分的滑水道。 锚定部分可以将滑动部分固定到表面，并且可以包括拉片元件，拉杆元件和粘合元件。
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公开(公告)号：US20110183767A1
公开(公告)日：2011-07-28
申请号：US12845980
申请日：2010-07-29
申请人： Matthew Thayer
发明人： Matthew Thayer
IPC分类号： A63G21/18
CPC分类号： A63G21/18 , A63G31/007 , E02D5/80
摘要： The present disclosure provides a waterslide that may include a flexible slide portion and an anchor portion. The anchor portion may secure the slide portion to a surface and may include a tab element, a stake element, and an adhesive element.
摘要翻译： 本公开提供了可以包括柔性滑动部分和锚固部分的滑水道。 锚定部分可以将滑动部分固定到表面，并且可以包括拉片元件，拉杆元件和粘合元件。
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