公开(公告)号：US06184555B2

公开(公告)日：2001-02-06

申请号：US09117636

申请日：1998-12-04

申请人： Jeno Tihanyi ,  Helmut Strack ,  Heinrich Geiger

发明人： Jeno Tihanyi ,  Helmut Strack ,  Heinrich Geiger

IPC分类号： H01L2976

CPC分类号： H01L29/7811 ,  H01L21/2257 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7835

摘要： The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-drain load path, in the semiconductor body, i.e. in the inner zone in the case of vertical components and in the drift zone in the case of lateral components, the concentration of the regions doped by the first conduction type corresponding approximately to the concentration of the regions doped by the second conduction type.

摘要翻译： 本发明涉及垂直或侧向设计的场效应可控半导体元件，即MOSFET和IGBT。 在这种情况下，相反导电类型的耗尽区和互补耗尽区被引入到半导体主体中的源极 - 漏极负载路径中，即在垂直分量的情况下在内部区域中，并且在横向 由第一导电类型掺杂的区域的浓度大致对应于由第二导电类型掺杂的区域的浓度。