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公开(公告)号：US07045273B2
公开(公告)日：2006-05-16
申请号：US10285050
申请日：2002-10-31
申请人： Jens Ferbitz , Werner Mormann , Jens Rottstegge , Christoph Hohle , Christian Eschbaumer , Michael Sebald
发明人： Jens Ferbitz , Werner Mormann , Jens Rottstegge , Christoph Hohle , Christian Eschbaumer , Michael Sebald
CPC分类号： G03F7/405
摘要： A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.
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2.发明授权Process for sidewall amplification of resist structures and for the production of structures having reduced structure size 失效用于抗蚀剂结构的侧壁放大和用于生产具有减小的结构尺寸的结构的方法公开(公告)号：US06893972B2
公开(公告)日：2005-05-17
申请号：US10233694
申请日：2002-09-03
申请人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
发明人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
IPC分类号： G03F7/40 , H01L21/027 , H01L21/308 , H01L21/302 , C03C15/00 , G03C1/73 , H01L21/3065
CPC分类号： H01L21/3088 , G03F7/40 , H01L21/0274
摘要： The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.
摘要翻译： 该新颖的工艺适用于高分辨抗蚀剂结构的生产。 具有腹板的抗蚀剂结构由衬底上的光致抗蚀剂制成，然后选择性地化学放大腹板的侧壁，从而获得化学放大的侧壁结构。 在去除化学未放大的部分之后，放大的侧壁结构被转移到基底。 该过程允许使用当前常规的曝光波长来分辨不可生产的结构。
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公开(公告)号：US06770423B2
公开(公告)日：2004-08-03
申请号：US10186660
申请日：2002-07-01
申请人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
发明人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
IPC分类号： G03F700
摘要： The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.
摘要翻译： 本发明涉及一种制备放大的负型抗蚀剂结构的方法，其中在显影步骤中的抗蚀剂曝光和对比之后，抗蚀剂结构同时显影并进行甲硅烷基化。 这大大简化了放大抗蚀剂结构的生产。
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公开(公告)号：US07041426B2
公开(公告)日：2006-05-09
申请号：US10199640
申请日：2002-07-19
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/109 , Y10S430/115
摘要： A photoresist includes a polymer which has acid-cleavable groups in its main chain. The polymer can thus be cleaved by acid into short cleavage products which can be removed from the substrate through the use of a developer. The polymer is completely or partially fluorinated, and consequently has an improved transparency to light of short wavelengths.
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5.发明授权CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING TRANSPARENCY ENHANCEMENT OF RESIST COPOLYMERS FOR 157 NM PHOTOLITHOGRAPHY THROUGH THE USE OF FLUORINATED CINNAMIC ACID DERIVATIVES 失效化学放大光电子和使用透明性增强抗性共聚物进行结构化取代的方法，通过使用氟化的酸式衍生物进行157 nm的光刻法公开(公告)号：US06806027B2
公开(公告)日：2004-10-19
申请号：US10208326
申请日：2002-07-30
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.
摘要翻译： 化学放大的光致抗蚀剂在157nm的波长下表现出增加的透明度。 化学放大光致抗蚀剂包括含有源自肉桂酸或肉桂酸酯的至少单氟化或被氟代烷基取代的肉桂酸酯的第一重复单元的聚合物。 还包括使用氟化肉桂酸衍生物的157nm光刻法使用抗蚀剂共聚物透明度增强来构建取代基的方法。
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6.发明授权Silicon resist for photolithography at short exposure wavelengths and process for making photoresists 失效用于在短曝光波长下进行光刻的硅抗蚀剂和用于制备光致抗蚀剂的工艺公开(公告)号：US06974655B2
公开(公告)日：2005-12-13
申请号：US10233915
申请日：2002-09-03
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/40 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.
摘要翻译： 化学放大光抗蚀剂包括含有与极性基团连接的酸不稳定基团的聚合物，并且还含有允许固结剂附着的锚定基团。 聚合物包括含有硅氧烷基团的第一重复单元。 一方面，光致抗蚀剂对于短波长辐射表现出增强的透明度，另一方面允许结构化抗蚀剂的化学固化。 还描述了制造结构抗蚀剂的方法。
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公开(公告)号：US07052820B2
公开(公告)日：2006-05-30
申请号：US10208351
申请日：2002-07-30
申请人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Michael Sebald
发明人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Michael Sebald
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106 , Y10S430/108
摘要： A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.
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8.发明授权Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers 失效通过氟化低聚物的目标化学键结构的结构生长扩大氟化抗蚀剂聚合物的抗蚀剂结构公开(公告)号：US06759184B2
公开(公告)日：2004-07-06
申请号：US10186139
申请日：2002-06-28
IPC分类号： G03F700
CPC分类号： G03F7/40 , G03F7/0046 , G03F7/0392 , Y10S430/126
摘要： A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.
摘要翻译： 抗蚀剂结构的曝光后放大的方法通过氟化低聚物的目标化学键结构的结构生长来扩大氟化抗蚀剂聚合物的抗蚀剂结构。 在第一步骤中，将含氟抗蚀剂施加到基底上。 抗蚀剂曝光和显影后，扩增剂的结合化学放大抗蚀剂结构。 由于分子链的混合性提高，优选使用含氟扩增剂来实现聚合物与扩增剂之间改善的反应。
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9.发明授权Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm 失效具有反应锚的光刻胶，用于化学固化抗蚀剂结构，用于157nm的曝光公开(公告)号：US07033740B2
公开(公告)日：2006-04-25
申请号：US10186657
申请日：2002-07-01
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0392 , G03F7/0758 , G03F7/405
摘要： The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.
摘要翻译： 化学放大抗蚀剂包括成膜聚合物，光致酸产生剂和溶剂。 成膜聚合物含有酸不稳定基团，其在酸的作用下被去除并释放导致聚合物在含水碱性显影剂中的溶解度增加的基团。 成膜聚合物具有衍生自单体的聚合物结构单元，其至少是单氟化的，并且含有用于连接扩增剂的锚定基团。 作为聚合物结构单元的氟化的结果，曝光波长为157nm的抗蚀剂的透明度显着增加，从而可以表示增加的层厚度的抗蚀剂结构。
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公开(公告)号：US20060105274A1
公开(公告)日：2006-05-18
申请号：US11260004
申请日：2005-10-27
申请人： Karl Kragler , Waltraud Herbst , Michael Sebald , Christoph Hohle
发明人： Karl Kragler , Waltraud Herbst , Michael Sebald , Christoph Hohle
IPC分类号： G03C5/00
CPC分类号： G03F7/38 , G03F7/70425 , G03F7/70533
摘要： A method for forming a lithography mask on a surface region of a wafer is presented. In one embodiment of the method according to the invention time periods from the end of an exposure operation until the beginning of a thermal aftertreatment for the sections of the semiconductor material region are to be identical or approximately identical.
摘要翻译： 提出了在晶片的表面区域上形成光刻掩模的方法。 在根据本发明的方法的一个实施例中，从半导体材料区域的部分的曝光操作结束到热后处理开始的时间段将相同或大致相同。
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