公开(公告)号：US08039406B2

公开(公告)日：2011-10-18

申请号：US12558559

申请日：2009-09-13

申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

IPC分类号： C23C16/505 ,  H01L21/42

CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。

公开(公告)号：US20100031886A1

公开(公告)日：2010-02-11

申请号：US12558559

申请日：2009-09-13

申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

IPC分类号： C23C16/513

CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。

公开(公告)号：US20070264791A1

公开(公告)日：2007-11-15

申请号：US11746566

申请日：2007-05-09

申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

IPC分类号： H01L21/76

CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。