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    Hybrid Solar Cell and Method for Manufacturing the Same
    1.
    发明申请
    Hybrid Solar Cell and Method for Manufacturing the Same 审中-公开
    混合太阳能电池及其制造方法

    公开(公告)号：US20120204943A1

    公开(公告)日：2012-08-16

    申请号：US13502731

    申请日：2010-01-01

    申请人： Jin Hyuk Yoo

    发明人： Jin Hyuk Yoo

    IPC分类号： H01L31/0352 ,  H01L31/0224

    CPC分类号： H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A hybrid solar cell is disclosed, which is capable of preventing a defect from occurring in a surface of a semiconductor wafer when forming a thin-film type semiconductor layer on the semiconductor wafer, to thereby improve cell efficiency by the increase of open-circuit voltage, the hybrid solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a first electrode on the first semiconductor layer; and a second electrode on the second semiconductor layer; wherein the first semiconductor layer comprises a lightly doped first semiconductor layer on one surface of the semiconductor wafer; and a highly doped first semiconductor layer on the lightly doped first semiconductor layer.

    摘要翻译： 公开了一种混合太阳能电池，其能够防止在半导体晶片上形成薄膜型半导体层时在半导体晶片的表面发生缺陷，从而通过开路电压的提高来提高电池效率 ，所述混合太阳能电池包括具有预定极性的半导体晶片; 在半导体晶片的一个表面上的第一半导体层; 在所述半导体晶片的另一个表面上的第二半导体层，其中所述第二半导体层的极性与所述第一半导体层不同; 在所述第一半导体层上的第一电极; 和在第二半导体层上的第二电极; 其中所述第一半导体层包括在所述半导体晶片的一个表面上的轻掺杂的第一半导体层; 以及在轻掺杂的第一半导体层上的高度掺杂的第一半导体层。

    METHOD OF GAP-FILLING USING AMPLITUDE MODULATION RADIOFREQUENCY POWER AND APPARATUS FOR THE SAME
    2.
    发明申请
    METHOD OF GAP-FILLING USING AMPLITUDE MODULATION RADIOFREQUENCY POWER AND APPARATUS FOR THE SAME 有权
    使用振幅调制无线电功率的空隙填充方法及其设备

    公开(公告)号：US20070264791A1

    公开(公告)日：2007-11-15

    申请号：US11746566

    申请日：2007-05-09

    申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

    摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

    摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130320486A1

    公开(公告)日：2013-12-05

    申请号：US13786853

    申请日：2013-03-06

    申请人： Jin-Hyuk YOO ,  Dae-hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

    发明人： Jin-Hyuk YOO ,  Dae-hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

    IPC分类号： H01L23/48

    CPC分类号： H01L27/1157 ,  H01L23/48 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

    摘要翻译： 提供一种半导体器件。 半导体器件包括设置在半导体衬底上的导电图案。 设置在导电图案上并且彼此位于相同水平面的第一和第二导电线。 隔离图案设置在第一和第二导线之间。 提供穿过第一导线和导电图案的第一垂直结构。 提供穿过第二导线和导电图案的第二垂直结构。 提供穿过导电图案并与隔离图案接触的辅助图案。

    METHOD OF GAP-FILLING USING AMPLITUDE MODULATION RADIOFREQUENCY POWER AND APPARATUS FOR THE SAME
    6.
    发明申请
    METHOD OF GAP-FILLING USING AMPLITUDE MODULATION RADIOFREQUENCY POWER AND APPARATUS FOR THE SAME 有权
    使用振幅调制无线电功率的空隙填充方法及其设备

    公开(公告)号：US20100031886A1

    公开(公告)日：2010-02-11

    申请号：US12558559

    申请日：2009-09-13

    申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    IPC分类号： C23C16/513

    CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

    摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

    摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。

    Method of gap-filling using amplitude modulation radiofrequency power and apparatus for the same
    9.
    发明授权
    Method of gap-filling using amplitude modulation radiofrequency power and apparatus for the same 有权
    使用调幅射频电源的间隙填充方法及其设备

    公开(公告)号：US08039406B2

    公开(公告)日：2011-10-18

    申请号：US12558559

    申请日：2009-09-13

    申请人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    发明人： Jeong Hoon Han ,  Jin Hyuk Yoo ,  Young Rok Kim

    IPC分类号： C23C16/505 ,  H01L21/42

    CPC分类号： H01L21/31608 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76837

    摘要： A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

    摘要翻译： 在衬底上填充间隙的方法包括将其上形成有间隙的衬底设置在腔室中的基座上; 向腔室施加源功率以产生等离子体进入腔室; 将工艺气体供应到所述室中; 通过向所述基座施加第一偏置功率来将薄膜填充到间隙中，所述第一偏置功率的幅度被周期性地调制; 停止处理气体的供给并切断第一偏压功率; 并熄灭腔室中的等离子体。

    Methods of fabricating a semiconductor device
    10.
    发明授权
    Methods of fabricating a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US08017485B2

    公开(公告)日：2011-09-13

    申请号：US12588564

    申请日：2009-10-20

    申请人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

    发明人： Du-Hyun Cho ,  Tae-Hyuk Ahn ,  Sang-Sup Jeong ,  Jin-Hyuk Yoo

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11573 ,  H01L21/28114 ,  H01L27/105 ,  H01L27/1052 ,  H01L29/42376

    摘要： Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.

    摘要翻译： 提供了制造半导体器件的方法，所述方法包括在半导体衬底上形成依次层叠的第一电介质层，数据存储层和第二电介质层。 具有暴露第二电介质层的第一区域的第一开口的掩模形成在第二电介质层上。 形成填充至少一部分第一开口的栅电极。 暴露第二电介质层的第二区域的第二开口通过蚀刻掩模形成，使得第二区域与第一区域间隔开。 通过依次蚀刻第二介电层和数据存储层的暴露的第二区域来形成第二介质图案和数据存储图案。 第二电介质图案形成为具有比栅电极的下表面更大的宽度。