摘要:
Embodiments of methods and systems according to the application can transmit voice data by using a wireless LAN and a Bluetooth. One system embodiment can include a headset, an AP, and a terminal device to communicate with the headset according to a first protocol (e.g., Bluetooth) to transmit downlink voice data to the headset and to receive uplink voice data from the headset and to communicate with the AP according to a second protocol (e.g., wireless LAN) to transmit the uplink voice data to the AP and to receive the downlink voice data from the AP. The terminal device can receive the downlink voice data from the AP after the terminal device sends a PS-Poll frame to the AP within a period during which a transmission/reception between the terminal device and the headset is not to be performed.
摘要:
Embodiments of systems (e.g., the terminal apparatus) and methods according to the application can perform a handoff from a WiBro (wireless broadband) service to a wireless LAN service or from a WIMAX (worldwide interoperability for microwave access) service to a wireless LAN service. One embodiment can perform a communication according to a WIMAX or WiBro standard and, upon entering into an area where a communication conforming to a wireless LAN standard is available, perform a communication according to the wireless LAN standard.
摘要:
Embodiments of methods and systems of the application can transmit data (e.g., voice) using a wireless LAN and a Bluetooth. One system embodiment can include a terminal device, an AP (access point) for communicating with the terminal device according to a first (e.g., wireless LAN) protocol by using a first frequency band among multiple frequency bands of a prescribed frequency band (e.g., ISM frequency band) and a headset for communicating with the terminal device according to a second (e.g., Bluetooth) protocol by using at least one frequency band of remaining frequency bands by excepting the first frequency band.
摘要:
In a main memory database system constituted of the dual memory architecture of PRAM and DRAM as a main memory, a method for updating data in PRAM and DRAM includes Move-When-Write, memory allocation scheme in the dual memory architecture, and a method for dividing and storing database components in the PRAM and DRAM, comprises: determining properties of database components; determining which the components have higher importance required for maintaining the consistency and integrity in a database according to the determined properties of database components; if importance of some of the database components is determined to high level, transmitting the determined high components to PRAM; storing the transmitted database components in PRAM; if importance of some of the database components is determined to low level, transmitting the determined low components to DRAM; and storing lower importance of database components to DRAM, and capturing as snapshot the stored database components by periods, thereby providing very high-speed response time and high transaction throughput by including a Persistent RAM as a main memory and 64-bit processor.
摘要:
Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
摘要:
Methods of forming a multi-level metal line of a semiconductor device are disclosed. One example method includes subsequently stacking first and second metal layers, wherein a conductive etching stopper layer is interposed at an interface between the first and second metal layers; forming first and second metal layer pattern by patterning the first metal layer, the etching stopper layer, and the second metal layer, wherein the first metal layer pattern is formed as a lower metal line; forming a connection contact in form of a plug by selectively etching the second metal layer pattern until the etching stopper layer is exposed; forming an interlayer insulating layer to cover the connection contact and the first metal layer pattern; and exposing an upper surface of the connection contact by planarizing the interlayer insulating layer.