公开(公告)号：US20080315950A1

公开(公告)日：2008-12-25

申请号：US12203260

申请日：2008-09-03

申请人： Jeongwook Koh ,  Chun-Deok Suh ,  Eun-Chul Park

发明人： Jeongwook Koh ,  Chun-Deok Suh ,  Eun-Chul Park

IPC分类号： H03F3/45 ,  H03L7/00

CPC分类号： H03F1/26 ,  H03F3/45179 ,  H03F2200/366 ,  H03F2200/372 ,  H03F2203/45342 ,  H03F2203/45371 ,  H03F2203/45396

摘要： Integrated circuit devices include a pair of field effect transistors having shared source terminals, shared drain terminals and shared gate terminals, which may be treated herein as being electrically coupled in parallel. A switch circuit is also provided, which is configured to drive a body terminal of a first one of the pair of field effect transistors with an alternating sequence of first and second unequal body voltages. This alternating sequence is synchronized with a first clock signal. The switch circuit is also configured to drive a body terminal of a second one of the pair of field effect transistors with an alternating sequence of third and fourth unequal body voltages, which is synchronized with a second clock signal. The first and third body voltages may have equivalent magnitudes and the second and fourth body voltages may have equivalent magnitudes. The first and second clock signals may have 50% duty cycles and may be 180 degrees out-of-phase relative to each other.

摘要翻译： 集成电路器件包括具有共享源极端子，共用漏极端子和共享栅极端子的一对场效应晶体管，其可以在本文中被并入电耦合。 还提供了一种开关电路，其被配置为用第一和第二不相等体电压的交替序列来驱动一对场效应晶体管中的第一个场效应晶体管的主体端子。 该交替序列与第一时钟信号同步。 开关电路还被配置为以与第二时钟信号同步的第三和第四不等体电压的交替序列来驱动一对场效应晶体管中的第二个场效应晶体管的主体端子。 第一和第三体电压可以具有相等的量级，第二和第四体电压可以具有相等的量级。 第一和第二时钟信号可以具有50％的占空比，并且可以相对于彼此是180度异相。

公开(公告)号：US20060038623A1

公开(公告)日：2006-02-23

申请号：US11059701

申请日：2005-02-17

申请人： Euisik Yoon ,  Eun-Chul Park

发明人： Euisik Yoon ,  Eun-Chul Park

IPC分类号： H03B5/18

CPC分类号： H03B5/1841 ,  H03B5/20

摘要： The present invention relates to a distributed oscillator, and more particularly, to a high frequency distributed oscillator using coupled transmission lines. According to the present invention, coupled transmission lines capable of increasing the frequency selectivity are used as transmission lines. Signal interference occurs among the coupled transmission lines because of mutual approximation. The coupled transmission lines serve as a filter due to the signal interference. A phase noise characteristic can be thus increased.

摘要翻译： 分布式振荡器技术领域本发明涉及分布式振荡器，更具体地说，涉及使用耦合传输线路的高频分布式振荡器。 根据本发明，可以使用能够提高频率选择性的耦合传输线作为传输线。 由于相互近似，在耦合的传输线之间发生信号干扰。 耦合传输线由于信号干扰而用作滤波器。 因此可以增加相位噪声特性。

公开(公告)号：US07119332B2

公开(公告)日：2006-10-10

申请号：US10777941

申请日：2004-02-12

申请人： Il-Joo Cho ,  Eun-Chul Park ,  Songcheol Hong ,  Euisik Yoon

发明人： Il-Joo Cho ,  Eun-Chul Park ,  Songcheol Hong ,  Euisik Yoon

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G01Q70/16 ,  G01N23/225

摘要： A probe is provided for an SPM (Scanning Probe Microscope), and a method is provided for fabricating the probe in which a double side alignment process is not required to simplify the fabricating. The probe includes a cantilever; a body supporting the cantilever; and a tip formed at an end of the cantilever, wherein the cantilever, the body and the tip are made of silicon, and boron is diffused into the cantilever and a predetermined area of the body. The method includes steps of: forming a first mask layer on an area of a silicon substrate to be formed with the body and the tip; etching the silicon substrate in a predetermined depth using the first mask layer to form the tip; removing the first mask and forming a second mask layer on an area of the silicon substrate except for an area to be formed with the body and the cantilever; forming a boron-diffused layer by diffusing boron into an area to be formed with the cantilever and a predetermined area of the body using the second mask; removing the second mask layer and forming a third mask layer on the boron-diffused layer; and etching the silicon substrate using the third mask layer to form the body and the cantilever.

摘要翻译： 提供了用于SPM（扫描探针显微镜）的探针，并且提供了一种用于制造探针的方法，其中不需要双侧对准工艺来简化制造。 探头包括悬臂; 支撑悬臂的身体; 以及形成在所述悬臂的端部的尖端，其中所述悬臂，所述主体和所述尖端由硅制成，并且硼扩散到所述悬臂和所述主体的预定区域。 该方法包括以下步骤：在要与主体和尖端形成的硅衬底的区域上形成第一掩模层; 使用第一掩模层以预定深度蚀刻硅衬底以形成尖端; 除去所述第一掩模并在所述硅衬底的除了要与所述主体和所述悬臂形成的区域之外的区域上形成第二掩模层; 通过使用第二掩模将硼扩散到与悬臂形成的区域和身体的预定区域中，形成硼扩散层; 去除所述第二掩模层并在所述硼扩散层上形成第三掩模层; 以及使用所述第三掩模层蚀刻所述硅衬底以形成所述主体和所述悬臂。

公开(公告)号：US07161441B2

公开(公告)日：2007-01-09

申请号：US11059701

申请日：2005-02-17

申请人： Euisik Yoon ,  Eun-Chul Park

发明人： Euisik Yoon ,  Eun-Chul Park

IPC分类号： H03B5/18

CPC分类号： H03B5/1841 ,  H03B5/20

摘要： The present invention relates to a distributed oscillator, and more particularly, to a high frequency distributed oscillator using coupled transmission lines. According to the present invention, coupled transmission lines capable of increasing the frequency selectivity are used as transmission lines. Signal interference occurs among the coupled transmission lines because of mutual approximation. The coupled transmission lines serve as a filter due to the signal interference. A phase noise characteristic can be thus increased.

摘要翻译： 分布式振荡器技术领域本发明涉及分布式振荡器，更具体地说，涉及使用耦合传输线路的高频分布式振荡器。 根据本发明，可以使用能够提高频率选择性的耦合传输线作为传输线。 由于相互近似，在耦合的传输线之间发生信号干扰。 耦合传输线由于信号干扰而用作滤波器。 因此可以增加相位噪声特性。

公开(公告)号：US06517483B2

公开(公告)日：2003-02-11

申请号：US09755911

申请日：2001-01-04

申请人： Eun-Chul Park ,  Jun-Bo Yoon ,  Euisik Yoon

发明人： Eun-Chul Park ,  Jun-Bo Yoon ,  Euisik Yoon

IPC分类号： A61B316

CPC分类号： A61B3/16 ,  A61B2562/028

摘要： Disclosed are a remote pressure-monitoring device and a preparing method thereof. The device comprises a metal electrode on a glass substrate, a capacitive sensor made of a silicon diaphragm, and an electroplated inductor electrically connected, in parallel, with the sensor. The glass substrate and the silicon are electrically bonded to form an LC resonator. For the fabrication of the device, first, a metal electrode which plays a role as a lower electrode for a capacitive pressure sensor is deposited on the glass substrate with the same coefficient of thermal expansion as that of silicon. An inductor is formed at a thickness by copper electroplating, surrounding the metal electrode at a predetermined distance. A silicon substrate is anisotropically etched to form a space for enveloping the metal electrode at a central area and to form a groove around the space. Boron ions are diffused lightly into the space and deeply into the groove to form etch barriers thereat, followed by bonding the silicon substrate on the glass substrate through an electrical contact in such a way that the metal electrode and the inductor are enveloped in the space and the groove, respectively. Then, the silicon substrate is etched out from its rear side to the extent that the etch barriers are exposed.

摘要翻译： 公开了一种远程压力监测装置及其制备方法。 该装置包括玻璃基板上的金属电极，由硅隔膜制成的电容传感器和与传感器并联电连接的电镀电感器。 玻璃基板和硅电连接以形成LC谐振器。 对于器件的制造，首先，以与硅相同的热膨胀系数的方式在玻璃衬底上沉积作为电容式压力传感器的下部电极起作用的金属电极。 电感器通过铜电镀形成厚度，以预定距离围绕金属电极。 各向异性蚀刻硅衬底以形成用于将金属电极包围在中心区域并在该空间周围形成凹槽的空间。 硼离子轻轻地扩散到空间中并深深地扩散到沟槽中，在其上形成蚀刻阻挡层，然后通过电接触将硅衬底接合在玻璃衬底上，使得金属电极和电感器被包围在空间中， 凹槽。 然后，硅衬底从其后侧被蚀刻到暴露蚀刻屏障的程度。

公开(公告)号：US06287256B1

公开(公告)日：2001-09-11

申请号：US09382353

申请日：1999-08-25

申请人： Eun-Chul Park ,  Jun-Bo Yoon ,  Euisik Yoon

发明人： Eun-Chul Park ,  Jun-Bo Yoon ,  Euisik Yoon

IPC分类号： A61B316

CPC分类号： A61B3/16 ,  A61B2562/028

摘要： Disclosed are a remote pressure-monitoring device and a preparing method thereof. The device comprises a metal electrode on a glass substrate, a capacitive sensor made of a silicon diaphragm, and an electroplated inductor electrically connected, in parallel, with the sensor. The glass substrate and the silicon are electrically bonded to form an LC resonator. For the fabrication of the device, first, a metal electrode which plays a role as a lower electrode for a capacitive pressure sensor is deposited on the glass substrate with the same coefficient of thermal expansion as that of silicon. An inductor is formed at a thickness by copper electroplating, surrounding the metal electrode at a predetermined distance. A silicon substrate is anisotropically etched to form a space for enveloping the metal electrode at a central area and to form a groove around the space. Boron ions are diffused lightly into the space and deeply into the groove to form etch barriers thereat, followed by bonding the silicon substrate on the glass substrate through an electrical contact in such a way that the metal electrode and the inductor are enveloped in the space and the groove, respectively. Then, the silicon substrate is etched out from its rear side to the extent that the etch barriers are exposed.