公开(公告)号：US20050258578A1

公开(公告)日：2005-11-24

申请号：US10489924

申请日：2001-09-14

申请人： Jerome Birnbaum ,  Glen Fryxell ,  Shari Xiaohong ,  Christopher Coyle ,  Glen Dunham ,  Suresh Baskaran ,  Ralph Williford

发明人： Jerome Birnbaum ,  Glen Fryxell ,  Shari Xiaohong ,  Christopher Coyle ,  Glen Dunham ,  Suresh Baskaran ,  Ralph Williford

IPC分类号： C04B38/06 ,  B28B1/30 ,  B28B11/00 ,  C01B33/12 ,  C04B20/00 ,  C04B33/32 ,  C04B35/14 ,  C04B35/16 ,  C04B35/624 ,  C04B38/00 ,  C04B38/10 ,  C04B41/80 ,  H01L21/316

CPC分类号： C04B35/62655 ,  B01D67/0048 ,  B01D67/0058 ,  B01D67/0088 ,  B01D67/0093 ,  B01D71/024 ,  B01D2323/18 ,  B01D2323/30 ,  C04B20/0056 ,  C04B35/14 ,  C04B35/16 ,  C04B35/624 ,  C04B38/0022 ,  C04B2111/00482 ,  C04B2111/1025 ,  C04B2235/72 ,  H01L21/31695 ,  C04B38/0051 ,  C04B38/009 ,  C04B38/02 ,  C04B38/10 ,  C04B14/4631

摘要： Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. The invention should be broadly applicable to any cross-linked ceramic or hybrid ceramic films (including silicate and organosilicate films, and especially highly porous forms of the films for low-dielectric constant applications). The invention has been found to be particularly effective with surfactant-templated silicate films with nanometer-scale porosity. The invention in either embodiment should also be applicable to evaporation-induced formation of other cross-linked shapes such as fibers and powders.

摘要翻译： 多孔陶瓷和混合陶瓷膜可用作半导体互连中的低介电常数中间层。 （混合陶瓷膜被定义为在结构中含有有机和陶瓷分子组分的膜，例如有机硅酸盐）。 本发明描述了在增加多孔电介质膜的机械完整性的情况下，湿度处理（使用特定温度/湿度处理作为说明性实例）的有用性，对膜孔隙率或介电常数具有最小的有害影响，并且对膜质量没有不利影响。 以表面活性剂模板的介孔硅酸盐膜为例说明了这种处理的效果。 本发明还描述了与用于这种介电膜的高纯度无碱金属的陶瓷和混合前体一起使用的特定的添加剂族，其将能够以所需的机械完整性更好地控制膜孔隙率和质量以及更低的介电常数。 作为示例，使用表面活性剂模板的中孔硅酸盐膜来说明这些添加剂的功效。 本发明应广泛适用于任何交联的陶瓷或混合陶瓷膜（包括硅酸盐和有机硅酸盐膜，特别是用于低介电常数应用的膜的高度多孔形式）。 已经发现本发明对于具有纳米级孔隙率的表面活性剂模板化硅酸盐膜是特别有效的。 在任一实施方案中的本发明也应适用于其它交联形状如纤维和粉末的蒸发诱导形成。

公开(公告)号：US06548113B1

公开(公告)日：2003-04-15

申请号：US09711666

申请日：2000-11-09

申请人： Jerome Birnbaum ,  Gary Maupin ,  Glen Dunham ,  Glen Fryxell ,  Suresh Baskaran

发明人： Jerome Birnbaum ,  Gary Maupin ,  Glen Dunham ,  Glen Fryxell ,  Suresh Baskaran

IPC分类号： C23C1644

CPC分类号： C01B37/02 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249972

摘要： Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber. Finally, a flange reactor is described that includes a flange base and lid forming a tiny chamber therein for a wafer, the reactor being heated by conduction from a hot sand bath. The dehydroxylation and alkylation treatment of mesoporous silica films produces treated films exhibiting low dielectric constant and high elastic modulus.

摘要翻译： 描述了用于气相脱羟基和烷基化反应的真空/气相反应器实施例，其中基底可经受高真空，加热至目标温度，并尽可能快速且有效地用硅烷处理。 为了更好地促进甲硅烷基化和提高该方法的效率，反应器被设计成包含准催化剂表面，它们既可以作为“活化剂”来将物质置于更高能量状态或高活化状态，也可以作为 “洗涤器”来消除在甲硅烷化反应中产生的可能的毒物或反应性副产物。 一个描述的实施方案是在反应器室内具有热的，优选金属的固体表面的热丝反应器，其中处理具有介孔硅酸盐膜的晶片。 另一种是IR反应器，其具有密封铝环空的上下周边的上，下石英窗，以形成加热室。 最后，描述了一种法兰反应器，其包括法兰基座和盖子，用于在晶片上形成微小的室，该反应器由热砂浴传导加热。 介孔二氧化硅膜的脱羟基化和烷基化处理产生显示低介电常数和高弹性模量的处理膜。