公开(公告)号：US20120077298A1

公开(公告)日：2012-03-29

申请号：US13311644

申请日：2011-12-06

申请人： Ji-Hao LIANG ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

发明人： Ji-Hao LIANG ,  Masahiko Tsuchiya ,  Takako Chinone ,  Masataka Kajikawa

IPC分类号： H01L33/08

CPC分类号： H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/32

摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

摘要翻译： 氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于 基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。 氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。

公开(公告)号：US20110175105A1

公开(公告)日：2011-07-21

申请号：US13005710

申请日：2011-01-13

申请人： Jiro HIGASHINO ,  Ji-Hao LIANG ,  Takako CHINONE ,  Yasuyuki SHIBATA

发明人： Jiro HIGASHINO ,  Ji-Hao LIANG ,  Takako CHINONE ,  Yasuyuki SHIBATA

IPC分类号： H01L33/30 ,  H01L33/20

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

摘要翻译： 在具有刚玉结构的C面基板上形成多个突起。 在基板的表面上形成由包含Ga和N的III-V族化合物半导体制成的基膜。 基膜的表面比基材的表面更平坦。 包含Ga和N的发光结构设置在基膜上。 突起规则地布置在相对于基膜的a轴倾斜小于15度并且在与第一方向正交的第二方向上倾斜的第一方向上。 每个突起具有相对于m轴倾斜小于15度的两个第一平行边和相对于a轴倾斜小于15度的两个第二平行边。 两个第二侧之间的间隔比两个第一侧之间的间隔宽。

公开(公告)号：US20120061715A1

公开(公告)日：2012-03-15

申请号：US13231135

申请日：2011-09-13

申请人： Ji-Hao LIANG ,  Tatsuma Saito

发明人： Ji-Hao LIANG ,  Tatsuma Saito

IPC分类号： H01L33/62

CPC分类号： H01L33/0079 ,  H01L27/153 ,  H01L33/44 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2924/00

摘要： There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

摘要翻译： 提供一种半导体发光器件制造方法，其包括在生长衬底上形成半导体生长膜的步骤; 在半导体生长膜上形成金属膜; 在所述金属膜上形成多层绝缘膜，所述多层绝缘膜具有至少第一绝缘层和彼此相邻的第二绝缘层; 以及在所述多层绝缘膜上形成支撑构件。 存在于第一绝缘层中的针孔在第一和第二绝缘层之间的界面处与第二绝缘层中存在的针孔不连续。

公开(公告)号：US20120241805A1

公开(公告)日：2012-09-27

申请号：US13426141

申请日：2012-03-21

申请人： Yasuyuki SHIBATA ,  Ji-Hao LIANG ,  Jiro HIGASHINO

发明人： Yasuyuki SHIBATA ,  Ji-Hao LIANG ,  Jiro HIGASHINO

IPC分类号： H01L33/36 ,  H01L33/48

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/44

摘要： A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

摘要翻译： 半导体发光元件的制造方法，包括在半导体层叠体中在街道部分的宽度内形成牺牲部分，并进行湿蚀刻以与其相邻部分一起去除牺牲部分，从而去除街道中的蚀刻残留物。