公开(公告)号：US20110175105A1

公开(公告)日：2011-07-21

申请号：US13005710

申请日：2011-01-13

申请人： Jiro HIGASHINO ,  Ji-Hao LIANG ,  Takako CHINONE ,  Yasuyuki SHIBATA

发明人： Jiro HIGASHINO ,  Ji-Hao LIANG ,  Takako CHINONE ,  Yasuyuki SHIBATA

IPC分类号： H01L33/30 ,  H01L33/20

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

摘要翻译： 在具有刚玉结构的C面基板上形成多个突起。 在基板的表面上形成由包含Ga和N的III-V族化合物半导体制成的基膜。 基膜的表面比基材的表面更平坦。 包含Ga和N的发光结构设置在基膜上。 突起规则地布置在相对于基膜的a轴倾斜小于15度并且在与第一方向正交的第二方向上倾斜的第一方向上。 每个突起具有相对于m轴倾斜小于15度的两个第一平行边和相对于a轴倾斜小于15度的两个第二平行边。 两个第二侧之间的间隔比两个第一侧之间的间隔宽。

公开(公告)号：US20100155740A1

公开(公告)日：2010-06-24

申请号：US12636961

申请日：2009-12-14

申请人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L29/20 ,  H01L21/18

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L33/007 ,  H01L33/0079

摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

摘要翻译： 通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。 随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。 生长衬底与含空腔层分离。