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1.发明授权Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing 有权将一次性间隔件加入升高的源/漏处理的半导体制造方法公开(公告)号：US07125805B2
公开(公告)日：2006-10-24
申请号：US10839385
申请日：2004-05-05
申请人： Jian Chen , Rode R. Mora , Marc A. Rossow , Yasuhito Shiho
发明人： Jian Chen , Rode R. Mora , Marc A. Rossow , Yasuhito Shiho
IPC分类号： H01L21/336 , H01L21/311 , H01L21/31 , H01L21/469
CPC分类号： H01L29/6656 , H01L21/26586 , H01L29/66492 , H01L29/665 , H01L29/6653 , H01L29/66628 , H01L29/66772 , H01L29/7834
摘要： A semiconductor fabrication process includes forming a gate electrode overlying a substrate. A first silicon nitride spacer is formed adjacent the gate electrode sidewalls and a disposable silicon nitride spacer is then formed adjacent the offset spacer. An elevated source/drain structure, defined by the boundaries of the disposable spacer, is then formed epitaxially. The disposable spacer is then removed to expose the substrate proximal to the gate electrode and a shallow implant, such as a halo or extension implant, is introduced into the exposed substrate proximal the gate electrode. A replacement spacer is formed substantially where the disposable spacer existed a source/drain implant is done to introduce a source/drain impurity distribution into the elevated source drain. The gate electrode may include an overlying silicon nitride capping layer and the first silicon nitride spacer may contact the capping layer to surround the polysilicon gate electrode in silicon nitride.
摘要翻译： 半导体制造工艺包括形成覆盖衬底的栅电极。 在栅电极侧壁附近形成第一氮化硅间隔物，然后在偏移间隔物附近形成一次性氮化硅间隔物。 然后由一次性间隔件的边界限定的升高的源极/漏极结构外延形成。 然后去除一次性间隔件以暴露基板靠近栅电极，并且将浅的植入物（例如晕或延伸植入物）引入靠近栅电极的暴露的基底中。 基本上形成替代间隔物，其中一次性间隔物存在，进行源极/漏极注入以将源极/漏极杂质分布引入升高的源极漏极。 栅电极可以包括上覆的氮化硅覆盖层，并且第一氮化硅间隔物可接触覆盖层以在氮化硅中包围多晶硅栅电极。
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公开(公告)号：US20100240206A1
公开(公告)日：2010-09-23
申请号：US12408444
申请日：2009-03-20
IPC分类号： H01L21/283
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/3105 , Y10S977/774
摘要： A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer.
摘要翻译： 一种方法包括在衬底上形成第一介电层; 在第一介电层上形成纳米团簇; 在纳米团簇上形成第二电介质层; 使用一氧化二氮对第二电介质层进行退火; 并且在对所述第二介电层进行退火之后，在所述第二介电层上形成栅电极。
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公开(公告)号：US08884358B2
公开(公告)日：2014-11-11
申请号：US13748808
申请日：2013-01-24
IPC分类号： H01L29/66 , H01L29/423 , H01L29/40
CPC分类号： H01L29/401 , B82Y10/00 , H01L21/28273 , H01L29/0665 , H01L29/127 , H01L29/42332 , H01L29/4234
摘要： A non-volatile memory device includes a substrate and a charge storage layer. The charge storage layer comprises a bottom layer of oxide, a layer of discrete charge storage elements on the bottom layer of oxide, and a top layer of oxide on the charge storage elements. A control gate is on the top layer of oxide. A surface of the top layer of oxide facing a surface of the control gate is substantially planar.
摘要翻译： 非易失性存储器件包括衬底和电荷存储层。 电荷存储层包括底层氧化物，氧化层底层上的离散电荷存储元件层和电荷存储元件上的氧化物顶层。 控制门位于氧化物的顶层。 面向控制栅极表面的氧化物顶层的表面基本上是平面的。
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公开(公告)号：US20110223706A1
公开(公告)日：2011-09-15
申请号：US12721278
申请日：2010-03-10
申请人： JILL C. HILDRETH , Stanley M. Filipiak , Marc A. Rossow , Gregory S. Spencer , Bret T. Wilkerson
发明人： JILL C. HILDRETH , Stanley M. Filipiak , Marc A. Rossow , Gregory S. Spencer , Bret T. Wilkerson
IPC分类号： H01L31/18
CPC分类号： H01L31/1812 , H01L31/028 , Y02E10/547
摘要： A photodetector is formed to have a germanium detector on a waveguide. The germanium detector has a first surface on the waveguide and a second surface that, when exposed to ambient conditions, forms germanium oxide. In a processing platform, an oxygen-free plasma is applied to the second surface. The oxygen-free plasma removes oxygen that is bonded to germanium at the second surface. A cap layer is formed on the second surface prior to removing the germanium detector from the processing platform.
摘要翻译： 光电检测器形成为在波导上具有锗检测器。 锗探测器具有波导上的第一表面和暴露于环境条件时形成氧化锗的第二表面。 在处理平台中，将无氧等离子体施加到第二表面。 无氧等离子体去除在第二表面与锗结合的氧。 在从处理平台移除锗检测器之前，在第二表面上形成盖层。
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公开(公告)号：US07799634B2
公开(公告)日：2010-09-21
申请号：US12339262
申请日：2008-12-19
IPC分类号： H01L21/336
CPC分类号： H01L21/02532 , B82Y10/00 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/28273 , H01L21/28282
摘要： Nanocrystals are formed over an insulating layer by depositing a semiconductor layer over the insulating layer. The semiconductor layer is annealed to form a plurality of globules from the semiconductor layer. The globules are annealed using oxygen. Semiconductor material is deposited on the plurality of globules to add semiconductor material to the globules. After depositing the semiconductor material, the globules are annealed to form the nanocrystals. The nanocrystals can then be used in a storage layer of a non-volatile memory cell, especially a split-gate non-volatile memory cell having a select gate over the nanocrystals and a control gate adjacent to the select gate.
摘要翻译： 通过在绝缘层上沉积半导体层，在绝缘层上形成纳米晶体。 将半导体层退火以从半导体层形成多个球。 使用氧气对小球进行退火。 半导体材料沉积在多个小球上以将半导体材料加入到球体中。 在沉积半导体材料之后，将小球退火以形成纳米晶体。 然后可以将纳米晶体用于非易失性存储单元的存储层，特别是在纳米晶体上具有选择栅极的分离栅非易失性存储单元和与选择栅极相邻的控制栅极。
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公开(公告)号：US20100159651A1
公开(公告)日：2010-06-24
申请号：US12339262
申请日：2008-12-19
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02532 , B82Y10/00 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/28273 , H01L21/28282
摘要： Nanocrystals are formed over an insulating layer by depositing a semiconductor layer over the insulating layer. The semiconductor layer is annealed to form a plurality of globules from the semiconductor layer. The globules are annealed using oxygen. Semiconductor material is deposited on the plurality of globules to add semiconductor material to the globules. After depositing the semiconductor material, the globules are annealed to form the nanocrystals. The nanocrystals can then be used in a storage layer of a non-volatile memory cell, especially a split-gate non-volatile memory cell having a select gate over the nanocrystals and a control gate adjacent to the select gate.
摘要翻译： 通过在绝缘层上沉积半导体层，在绝缘层上形成纳米晶体。 将半导体层退火以从半导体层形成多个球。 使用氧气对小球进行退火。 半导体材料沉积在多个小球上以将半导体材料加入到球体中。 在沉积半导体材料之后，将小球退火以形成纳米晶体。 然后可以将纳米晶体用于非易失性存储单元的存储层，特别是在纳米晶体上具有选择栅极的分离栅非易失性存储单元和与选择栅极相邻的控制栅极。
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