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公开(公告)号：US5919599A
公开(公告)日：1999-07-06
申请号：US940169
申请日：1997-09-30
IPC分类号： G03F7/11 , C08F8/00 , C08F220/32 , C08F283/10 , C09D133/06 , G03F7/09 , G03C1/492 , C08K63/00
CPC分类号： G03F7/091 , C08F283/10 , C08F8/18 , C09D133/062 , C08F2800/10 , C08F2800/20 , C08F2810/20
摘要： Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate with grafted dyes.
摘要翻译： 特别是由某些高分子量聚合物和共聚物，特别是具有接枝染料的甲基丙烯酸缩水甘油酯制备具有改善的蚀刻速率的抗反射涂料组合物。
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公开(公告)号：US08257910B1
公开(公告)日：2012-09-04
申请号：US12491009
申请日：2009-06-24
IPC分类号： G03F7/26
CPC分类号： G03F7/091
摘要： The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved while improving adhesion and reducing or eliminating pattern collapse issues.
摘要翻译： 本发明提供了制造微电子结构的方法以及由此形成的所得结构使用EUV光刻工艺。 该方法涉及利用光致抗蚀剂层正下方的底层。 底层可以直接施加到基底上，或者可以施加到可施加到基底上的任何中间层。 优选的底层由可旋涂的聚合物组合物形成。 本发明的方法允许在提高粘附性和减少或消除图案折叠问题的同时实现减少的临界尺寸。
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3.发明授权公开(公告)号：US06962769B2
公开(公告)日：2005-11-08
申请号：US10660667
申请日：2003-09-11
申请人： Xie Shao , Jim D. Meador , Mandar Bhave , Vandana Krishnamurthy , Kelly A. Nowak , Michelle Fowler , Shreeram V. Deshpande
发明人： Xie Shao , Jim D. Meador , Mandar Bhave , Vandana Krishnamurthy , Kelly A. Nowak , Michelle Fowler , Shreeram V. Deshpande
IPC分类号： G03F7/11 , B32B7/02 , C08J3/24 , C09D5/00 , C09D7/12 , C09D105/00 , C09D133/00 , C09D161/20 , C09D163/00 , C09D167/00 , C09D171/00 , C09D179/08 , C09D201/00 , G03F7/004 , G03F7/09 , H01L21/027 , G03C1/492
CPC分类号： C08J3/241 , G03F7/091 , Y10S430/151
摘要： Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, α-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).
摘要翻译： 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在一个实施方案中，组合物包含小于约0.3重量％的强酸。 在另一个实施方案中，组合物中强酸与弱酸的重量比为约0:100至约25:75。 优选的弱酸化合物的实例包括酚类化合物（例如双酚S，双酚A，α-氰基-4-羟基肉桂酸），羧酸（例如乙酸），磷酸和氰基化合物。 聚合物和其它成分优选在溶剂体系中物理混合。 所得的组合物是旋转碗相容的（即，它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联）。
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4.发明授权Non-subliming mid-UV dyes and ultra-thin organic arcs having differential solubility 失效非升华中紫外线染料和具有差异溶解度的超薄有机电弧
公开(公告)号：US5892096A
公开(公告)日：1999-04-06
申请号：US598711
申请日：1996-02-08
申请人： Jim D. Meador , Xie Shao , Vandana Krishnamurthy , Earnest C. Murphy , Tony D. Flaim , Terry Lowell Brewer
发明人： Jim D. Meador , Xie Shao , Vandana Krishnamurthy , Earnest C. Murphy , Tony D. Flaim , Terry Lowell Brewer
IPC分类号： C07C45/74 , C07C49/84 , C07C255/41 , G03F7/09 , C07C255/09
CPC分类号： G03F7/091 , C07C255/41 , C07C45/74 , C07C49/84
摘要： Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.
摘要翻译： 使用双层i线光刻技术实现超薄抗反射涂层的紫外线紫外线染料由双柠檬烯生产; 双氰基丙烯酸酯/双氰基丙烯酰胺; 和1.4二乙烯基苯。 染料在标准光刻胶溶剂中是非共沸的和差异不溶的。
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5.发明授权Non-subliming Mid-UV dyes and ultra-thin organic arcs having differential solubility 失效不升华的中紫外线染料和具有不同溶解度的超薄有机电弧
公开(公告)号：US5688987A
公开(公告)日：1997-11-18
申请号：US336340
申请日：1994-11-09
申请人： Jim D. Meador , Xie Shao , Vandana Krishnamurthy , Earnest C. Murphy , Tony D. Flaim , Terry Lowell Brewer
发明人： Jim D. Meador , Xie Shao , Vandana Krishnamurthy , Earnest C. Murphy , Tony D. Flaim , Terry Lowell Brewer
IPC分类号： C07C45/74 , C07C49/84 , C07C255/41 , G03F7/09 , C07C255/00
CPC分类号： G03F7/091 , C07C255/41 , C07C45/74 , C07C49/84
摘要： Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.
摘要翻译： 使用双层i线光刻技术实现超薄抗反射涂层的紫外线紫外线染料由双柠檬烯生产; 双氰基丙烯酸酯/双氰基丙烯酰胺; 和1.4二乙烯基苯。 染料在标准光刻胶溶剂中是非共沸的和差异不溶的。
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公开(公告)号：US09960038B2
公开(公告)日：2018-05-01
申请号：US13335357
申请日：2011-12-22
申请人： Carlton Ashley Washburn , James E. Lamb, III , Nickolas L. Brakensiek , Qin Lin , Yubao Wang , Vandana Krishnamurthy , Claudia Scott
发明人： Carlton Ashley Washburn , James E. Lamb, III , Nickolas L. Brakensiek , Qin Lin , Yubao Wang , Vandana Krishnamurthy , Claudia Scott
CPC分类号： H01L21/0337 , C09D5/00 , G03F7/0035 , G03F7/11 , G03F7/40 , H01L21/0338 , Y10T428/24612
摘要： Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.
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公开(公告)号：US20120164390A1
公开(公告)日：2012-06-28
申请号：US13335357
申请日：2011-12-22
申请人： Carlton Ashley Washburn , James E. Lamb, III , Nickolas L. Brakensiek , Qin Lin , Yubao Wang , Vandana Krishnamurthy , Claudia Scott
发明人： Carlton Ashley Washburn , James E. Lamb, III , Nickolas L. Brakensiek , Qin Lin , Yubao Wang , Vandana Krishnamurthy , Claudia Scott
CPC分类号： H01L21/0337 , C09D5/00 , G03F7/0035 , G03F7/11 , G03F7/40 , H01L21/0338 , Y10T428/24612
摘要： Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.
摘要翻译： 提供了形成微电子结构的方法。 所述方法包括使用受控的底切工艺形成T形结构，以及将选择性可蚀刻的组合物沉积到T形结构的底切区域中。 随后去除T形结构以产生符合T形结构的底切区域的宽度和任选的高度的极小的底切形特征。 这些方法可以与其他常规图案化方法组合以产生具有极小特征尺寸的结构，而与用于图案化的光的波长无关。
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公开(公告)号：US06872506B2
公开(公告)日：2005-03-29
申请号：US10601897
申请日：2003-06-23
CPC分类号： C08G79/00 , C08L85/00 , G02B1/111 , Y10S430/106 , C08L2666/02
摘要： Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of: where: each of X1 and Y is individually selected from the group consisting of electron withdrawing groups; R2 is selected from the group consisting of alkyls and aryls; and R3 is selected from the group consisting of hydrogen and alkyls. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.
摘要翻译： 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在优选的实施方案中，聚合物包括具有选自以下的结构的光衰减部分：其中：X 1和Y各自独立地选自吸电子基团; R 2是 选自烷基和芳基; 所得组合物与纺丝碗相容（即它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联）是湿显影的， 并具有优异的光学性能。
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9.发明授权公开(公告)号：US06740469B2
公开(公告)日：2004-05-25
申请号：US10180625
申请日：2002-06-25
IPC分类号： G03C1735
CPC分类号： C08G79/10 , C08G79/00 , C08L85/00 , G03F7/091 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/151
摘要： Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring units having the formula where X is a light-attenuating moiety, M is a metal, and each R is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, and phenoxys. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.
摘要翻译： 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在一个优选实施方案中，组合物的聚合物包括具有式（I）的重复单元，其中X是光衰减部分，M是金属，并且每个R各自选自氢，烷基，芳基，烷氧基和苯氧基 。 所得到的组合物是旋转碗相容的（即，它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联）是湿显影的并且具有优异的光学性能。
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