公开(公告)号：US20080013034A1

公开(公告)日：2008-01-17

申请号：US11821146

申请日：2007-06-22

申请人： Jin Hwan Kim ,  Dae Hyun Jang

发明人： Jin Hwan Kim ,  Dae Hyun Jang

IPC分类号： G02F1/1333 ,  G02F1/13

CPC分类号： G02F1/133351 ,  G02F2201/50

摘要： A mother glass for a liquid crystal display and a method of fabricating a liquid crystal display using the same are disclosed. The mother glass includes a plurality of cell areas where a plurality of thin films is formed on a substrate, a dummy area disposed outside the plurality of cell areas on the substrate, and a passivation layer. The passivation layer is coated on substantially an overall portion of the plurality of cell areas, and formed in a straight line-like band form along a transverse direction in the dummy area to isolate the cell areas from each other in a longitudinal direction.

摘要翻译： 公开了一种用于液晶显示器的母玻璃以及使用其制造液晶显示器的方法。 母玻璃包括在基板上形成多个薄膜的多个单元区域，设置在基板上的多个单元区域的外侧的虚设区域和钝化层。 钝化层涂覆在多个单元区域的基本上整个部分上，并且在虚拟区域中沿着横向形成为直线状带状，以在纵向方向上隔离单元格区域。

公开(公告)号：US07760307B2

公开(公告)日：2010-07-20

申请号：US11821146

申请日：2007-06-22

申请人： Jin Hwan Kim ,  Dae Hyun Jang

发明人： Jin Hwan Kim ,  Dae Hyun Jang

IPC分类号： G02F1/1333 ,  G02F1/1339 ,  G02F1/13

CPC分类号： G02F1/133351 ,  G02F2201/50

摘要： A mother glass for a liquid crystal display and a method of fabricating a liquid crystal display using the same are disclosed. The mother glass includes a plurality of cell areas where a plurality of thin films is formed on a substrate, a dummy area disposed outside the plurality of cell areas on the substrate, and a passivation layer. The passivation layer is coated on substantially an overall portion of the plurality of cell areas, and formed in a straight line-like band form along a transverse direction in the dummy area to isolate the cell areas from each other in a longitudinal direction.

摘要翻译： 公开了一种用于液晶显示器的母玻璃以及使用其制造液晶显示器的方法。 母玻璃包括在基板上形成多个薄膜的多个单元区域，设置在基板上的多个单元区域的外侧的虚设区域和钝化层。 钝化层涂覆在多个单元区域的基本上整个部分上，并且在虚拟区域中沿着横向形成为直线状带状，以在纵向方向上隔离单元格区域。

公开(公告)号：US07508469B2

公开(公告)日：2009-03-24

申请号：US11823195

申请日：2007-06-26

申请人： Sang Ho Kim ,  Jin Hwan Kim ,  Dae Hyun Jang

发明人： Sang Ho Kim ,  Jin Hwan Kim ,  Dae Hyun Jang

IPC分类号： G02F1/1335

CPC分类号： G02F1/136227 ,  H01L27/124 ,  H01L27/1248

摘要： A crystal liquid display and a method of manufacturing the same are disclosed. The liquid crystal display includes upper and lower substrates facing each other, a thin film transistor, a pixel electrode, and a passivation layer. The thin film transistor is provided at an intersection of a gate line and a data line on the lower substrate, and the gate line and the data line cross at right angles. The pixel electrode is provided in a pixel area defined by the gate line and the data line. The passivation layer covers the entire surface of the lower substrate, and includes an opening having an elevation difference surface on a predetermined portion thereof. A concave-convex pattern is provided along the elevation difference surface of the opening.

摘要翻译： 公开了一种晶体液体显示器及其制造方法。 液晶显示器包括彼此面对的上基板和下基板，薄膜晶体管，像素电极和钝化层。 薄膜晶体管设置在下基板上的栅极线和数据线的交叉点处，栅极线和数据线交叉成直角。 像素电极设置在由栅极线和数据线限定的像素区域中。 钝化层覆盖下基板的整个表面，并且包括在其预定部分上具有高度差表面的开口。 沿着开口的高度差表面设置凹凸图案。

公开(公告)号：US09214569B2

公开(公告)日：2015-12-15

申请号：US14467571

申请日：2014-08-25

申请人： Ki Jeong Kim ,  Jung Ik Oh ,  Sung Soo Ahn ,  Dae Hyun Jang

发明人： Ki Jeong Kim ,  Jung Ik Oh ,  Sung Soo Ahn ,  Dae Hyun Jang

IPC分类号： H01L29/72 ,  H01L29/788 ,  H01L27/115 ,  H01L29/792

CPC分类号： H01L29/7889 ,  H01L27/11517 ,  H01L27/11563 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7926

摘要： According to example embodiments, a memory device includes a substrate, a channel region on the substrate, a plurality of gate electrode layers stacked on each other on the substrate, and a plurality of contact plugs. The gate electrode layers are adjacent to the channel region and extend in one direction to define a pad region. The gate electrode layers include first and second gate electrode layers. The contact plugs are connected to the gate electrode layers in the pad region. At least one of the contact plugs is electrically insulated from the from the first gate electrode layer and electrically connected to the second gate electrode layer by penetrating through the first gate electrode layer.

摘要翻译： 根据示例性实施例，存储器件包括衬底，衬底上的沟道区，在衬底上彼此堆叠的多个栅电极层和多个接触插塞。 栅极电极层与沟道区域相邻并且在一个方向上延伸以限定衬垫区域。 栅极电极层包括第一和第二栅电极层。 接触插塞连接到焊盘区域中的栅极电极层。 所述接触插塞中的至少一个与所述第一栅极电极层电绝缘，并且通过穿过所述第一栅极电极层而与所述第二栅电极层电连接。

公开(公告)号：US10115602B2

公开(公告)日：2018-10-30

申请号：US15444597

申请日：2017-02-28

申请人： Seung Jae Jung ,  Sang Joon Yoon ,  Yong Hyun Kwon ,  Dae Hyun Jang ,  Ha Na Kim

发明人： Seung Jae Jung ,  Sang Joon Yoon ,  Yong Hyun Kwon ,  Dae Hyun Jang ,  Ha Na Kim

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/115 ,  H01L29/10 ,  H01L27/11556 ,  H01L27/11582

摘要： A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.