公开(公告)号：USRE43411E1

公开(公告)日：2012-05-29

申请号：US12071055

申请日：2008-02-14

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L27/15 ,  H01L31/12

CPC classification number: H01L27/153

Abstract: A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.

Abstract translation: 公开了具有串联连接的两个发光二极管的半导体结构。 半导体结构包括具有相同叠层的两个发光二极管（LED），并且彼此邻接但隔开隔离沟槽。 来自底部的堆叠层包括导热基板，非导电保护层，金属粘合层，镜保护层，p型欧姆接触外延层，上覆层，有源层和下层 包层 在镜保护层和欧姆接触外延层之间的界面上形成两个用于两个LED的p型欧姆接触金属电极，并被埋在镜保护层中。 堆叠层具有形成在其中的第一沟槽，其暴露上覆层和电连接沟道以连接p型电极。 通过图案化暴露的上覆层形成隔离沟槽，直到进一步暴露非导电保护层。 两个n型电极形成在两个LED的下包层上。 沉积介电层以填充隔离沟槽并且覆盖第一沟槽的侧壁，使得其可以电隔离第二LED的层叠层，同时形成在其上的金属连接迹线以将p型欧姆接触电极 第二个LED的第一个LED和n型欧姆电极。

公开(公告)号：US20090200560A1

公开(公告)日：2009-08-13

申请号：US12320085

申请日：2009-01-16

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US07488988B2

公开(公告)日：2009-02-10

申请号：US11550332

申请日：2006-10-17

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.

Abstract translation: 发光器件包括衬底和衬底上的粘合剂层。 衬底上至少有两层多层外延结构。 每个结构依次包括上包层，有源层，下包层，欧姆接触外延层和通过粘合层粘附到基板的第一欧姆接触电极。 第二欧姆接触电极在下包层上。 A通道将有源层分为两部分。 第一电极在对应于有源层的第一部分的下包层上。 第二电极位于对应于有源层的第二部分的第二欧姆接触电极上。 在结构中形成连接层，以便将第一电极与第一欧姆接触电极耦合。 电介质层位于这两个结构之间。 导线连接这两个结构的电极。

公开(公告)号：US20110084304A1

公开(公告)日：2011-04-14

申请号：US12893181

申请日：2010-09-29

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/36

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US07816695B2

公开(公告)日：2010-10-19

申请号：US12320085

申请日：2009-01-16

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US08101959B2

公开(公告)日：2012-01-24

申请号：US12893181

申请日：2010-09-29

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

Abstract translation: 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US20070090377A1

公开(公告)日：2007-04-26

申请号：US11550332

申请日：2006-10-17

Applicant: Jin-Ywan Lin ,  Chuan-Cheng Tu

Inventor： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/0079 ,  H01L33/382

Abstract: A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.

Abstract translation: 发光器件包括衬底和衬底上的粘合剂层。 衬底上至少有两层多层外延结构。 每个结构依次包括上包层，有源层，下包层，欧姆接触外延层和通过粘合层粘附到基板的第一欧姆接触电极。 第二欧姆接触电极在下包层上。 A通道将有源层分为两部分。 第一电极在对应于有源层的第一部分的下包层上。 第二电极位于对应于有源层的第二部分的第二欧姆接触电极上。 在结构中形成连接层，以便将第一电极与第一欧姆接触电极耦合。 电介质层位于这两个结构之间。 导线连接这两个结构的电极。

公开(公告)号：US07435604B2

公开(公告)日：2008-10-14

申请号：US10957738

申请日：2004-10-04

Applicant: Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

Inventor： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC: H01L21/00

CPC classification number: H01L33/22

Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Abstract translation: 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US07391061B2

公开(公告)日：2008-06-24

申请号：US11316461

申请日：2005-12-22

Applicant: Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

Inventor： Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

IPC: H01L23/373

CPC classification number: H01L33/0079 ,  H01L33/382 ,  H01L33/641

Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

Abstract translation: 提供一种发光二极管及其制造方法。 发光二极管包括衬底，热扩散层，连接层和外延结构。 基板选自透明基板或非透明基板，其分别对应于连接层的不同材料。 被配置为改善发光二极管的热传导的热扩散层选自金刚石，杂质掺杂的金刚石或类金刚石材料。

公开(公告)号：US20070278496A1

公开(公告)日：2007-12-06

申请号：US11733778

申请日：2007-04-11

Applicant: Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

Inventor： Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode is disclosed. The light emitting diode includes a substrate, a thermal spreading layer disposed on the bottom of the substrate, a soldering layer disposed on the bottom of the thermal spreading layer, a barrier layer disposed between the thermal spreading layer and the soldering layer, and a light emitting layer disposed on top of the substrate.

Abstract translation: 公开了一种发光二极管。 发光二极管包括基板，设置在基板底部的热扩散层，设置在热扩散层底部的焊接层，设置在热扩散层和焊接层之间的阻挡层，以及光 发光层设置在基板的顶部。