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    Structure and method for determining a defect in integrated circuit manufacturing process
    6.
    发明授权
    Structure and method for determining a defect in integrated circuit manufacturing process 有权
    用于确定集成电路制造过程中的缺陷的结构和方法

    公开(公告)号：US09035674B2

    公开(公告)日：2015-05-19

    申请号：US13323634

    申请日：2011-12-12

    申请人： Hong Xiao ,  Jack Y. Jau ,  Chang Chun Yeh

    发明人： Hong Xiao ,  Jack Y. Jau ,  Chang Chun Yeh

    IPC分类号： H01L21/66

    CPC分类号： H01L22/12 ,  H01L22/24

    摘要： The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.

    摘要翻译： 本发明公开了一种用于确定集成电路制造过程中的缺陷的结构和方法，其中该结构包括形成在多个第一阵列中的多个正常有源区和形成在多个第二阵列中的多个有缺陷的有源区。 第一阵列和第二阵列是交错的，并且通过监视来自有源区域的带电粒子显微镜图像的电压对比来确定缺陷。

    Method and system for heating substrate in vacuum environment and method and system for identifying defects on substrate
    7.
    发明授权
    Method and system for heating substrate in vacuum environment and method and system for identifying defects on substrate 有权
    在真空环境中加热基材的方法和系统以及用于识别基材上的缺陷的方法和系统

    公开(公告)号：US08809779B2

    公开(公告)日：2014-08-19

    申请号：US12339558

    申请日：2008-12-19

    申请人： Hong Xiao ,  Yi-Xiang Wang

    发明人： Hong Xiao ,  Yi-Xiang Wang

    IPC分类号： G01N23/00 ,  G01N23/22 ,  H05B3/00

    CPC分类号： H05B3/0047 ,  G01N23/2202

    摘要： A method for heating a substrate in a vacuum environment and a system therefor is provided. The system includes a chamber capable of holding the substrate located in the vacuum environment and a light source capable of projecting a light beam only on a portion of the substrate. The method includes the following steps. First, the substrate is placed in the vacuumed chamber. Thereafter, the light beam emitted from the light source is projected on the portion of the substrate, such that the portion is significantly heated before whole the substrate is heated. When the light beam is a charged particle beam projected by a charged particle beam assembly and projected on defects located on the substrate, the defects are capable of being identified by an examination result provided by an examination assembly after termination of light beam projection.

    摘要翻译： 提供一种在真空环境中加热基板的方法及其系统。 该系统包括能够保持位于真空环境中的衬底的腔室和能够仅将光束投射到衬底的一部分上的光源。 该方法包括以下步骤。 首先，将基板放置在真空室中。 此后，从光源发射的光束被投射在基板的部分上，使得该部分在整个基板被加热之前被显着地加热。 当光束是由带电粒子束组件投射并投影在基板上的缺陷上的带电粒子束时，能够通过在光束投影终止之后由检查组件提供的检查结果来识别缺陷。

    Method and apparatus for identifying plug-to-plug short from a charged particle microscopic image
    8.
    发明授权
    Method and apparatus for identifying plug-to-plug short from a charged particle microscopic image 有权
    用于从带电粒子显微镜图像识别插头插头的方法和装置

    公开(公告)号：US08759762B2

    公开(公告)日：2014-06-24

    申请号：US12483220

    申请日：2009-06-11

    申请人： Hong Xiao ,  Wei Fang

    发明人： Hong Xiao ,  Wei Fang

    IPC分类号： H01J37/26 ,  H01J37/28 ,  H01J37/147

    CPC分类号： H01J37/26 ,  H01J37/1474 ,  H01J37/263 ,  H01J37/28 ,  H01L22/12

    摘要： A method of inspecting for plug-to-plug short (short circuit) defects on a sample is disclosed. A charged particle beam for imaging the sample is repeatedly line-scanned over the sample with a line-to-line advancement direction perpendicular to the line-scan direction. The method includes scanning the sample with a line-to-line advancement along a first and a second direction, to obtain a first and a second image of the sample, respectively. Then, the method includes identifying plug patterns, represented in the obtained images with abnormal grey levels, as abnormal plug patterns. Next, the method compares the locations of the abnormal plug patterns to determine the presence of plug-to-plug short defects on the sample.

    摘要翻译： 公开了一种检查样品上插头短插（短路）缺陷的方法。 用于对样品进行成像的带电粒子束在垂直于线扫描方向的线对线前进方向上在样品上重复线扫描。 该方法包括沿着第一和第二方向以线对线前进扫描样品，以分别获得样品的第一和第二图像。 然后，该方法包括将获得的具有异常灰度级的图像表示的插头图案识别为异常插头图案。 接下来，该方法比较异常插头图案的位置，以确定样品上插头到插头短缺陷的存在。

    Structure and method for determining a defect in integrated circuit manufacturing process
    9.
    发明授权
    Structure and method for determining a defect in integrated circuit manufacturing process 有权
    用于确定集成电路制造过程中的缺陷的结构和方法

    公开(公告)号：US08754372B2

    公开(公告)日：2014-06-17

    申请号：US13312152

    申请日：2011-12-06

    申请人： Hong Xiao

    发明人： Hong Xiao

    IPC分类号： H01J37/26

    CPC分类号： H01J37/26 ,  G01R31/024 ,  G01R31/307 ,  G11C11/401 ,  G11C2029/0403 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2814 ,  H01L22/12

    摘要： The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.

    摘要翻译： 本发明公开了一种用于确定集成电路制造工艺中的缺陷的结构和方法。 测试键设计用于结构为接地和浮动导电圆柱体的隔行阵列，并且微观图像可以预测为带电粒子的亮电压对比度（BVC）和暗电压对比度（DVC）信号的隔行扫描模式 光束成像系统。 该系统可以通过比较检测到的VC信号和预测的VC信号的模式来检测缺陷。

    Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations
    10.
    发明授权
    Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations 有权
    使用具有多个电子束配置的扫描电子显微镜检查缺陷的方法和装置

    公开(公告)号：US08716662B1

    公开(公告)日：2014-05-06

    申请号：US13549847

    申请日：2012-07-16

    申请人： Paul MacDonald ,  Hong Xiao

    发明人： Paul MacDonald ,  Hong Xiao

    IPC分类号： H01J37/28

    CPC分类号： H01J37/28 ,  H01J37/222 ,  H01J2237/24592

    摘要： One embodiment relates to a method of reviewing defects using a scanning electron microscope (SEM). A defect location having a defect for review is selected, and the SEM is configured to be in a first imaging configuration. The selected defect location is imaged using the SEM to generate a first SEM image of the selected defect location. A determination is made as to whether the defect is visible or non-visible in the first SEM image. If the defect is non-visible in the first SEM image, then the SEM is configured to be into a second imaging configuration, the selected defect location is imaged using the SEM to generate a second SEM image of the selected defect location, and a further determination is made as to whether the defect is visible or non-visible in the second SEM image. Other embodiments, aspects and features are also disclosed.

    摘要翻译： 一个实施例涉及使用扫描电子显微镜（SEM）检查缺陷的方法。 选择具有检查缺陷的缺陷位置，并且将SEM配置为处于第一成像配置。 使用SEM成像所选择的缺陷位置，以产生所选缺陷位置的第一SEM图像。 确定在第一SEM图像中缺陷是可见的还是不可见的。 如果缺陷在第一SEM图像中不可见，则将SEM配置为进入第二成像配置，使用SEM成像所选择的缺陷位置以产生所选缺陷位置的第二SEM图像， 确定在第二SEM图像中缺陷是可见的还是不可见的。 还公开了其它实施例，方面和特征。