公开(公告)号：US20090088002A1

公开(公告)日：2009-04-02

申请号：US11862865

申请日：2007-09-27

申请人： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. See ,  Meisheng Zhou ,  Liang Choo Hsia

发明人： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. See ,  Meisheng Zhou ,  Liang Choo Hsia

IPC分类号： H01L21/31

CPC分类号： H01L21/3143 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/31155 ,  H01L29/513 ,  H01L29/518

摘要： A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.

摘要翻译： 一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。 通过施加氮等离子体将氮引入到氧化硅层中。 在施加氮等离子体之后，将氧化硅层退火。 重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。 在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。 还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

公开(公告)号：US07928020B2

公开(公告)日：2011-04-19

申请号：US11862865

申请日：2007-09-27

申请人： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

发明人： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

IPC分类号： H01L21/00

CPC分类号： H01L21/3143 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/31155 ,  H01L29/513 ,  H01L29/518

摘要： A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.

摘要翻译： 一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。 通过施加氮等离子体将氮引入到氧化硅层中。 在施加氮等离子体之后，将氧化硅层退火。 重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。 在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。 还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

公开(公告)号：US07238581B2

公开(公告)日：2007-07-03

申请号：US11016023

申请日：2004-12-16

申请人： King Jien Chui ,  Ganesh Samudra ,  Yee Chia Yeo ,  Jinping Liu ,  Kheng Chok Tee ,  Wee Hong Phua ,  Lydia Wong

发明人： King Jien Chui ,  Ganesh Samudra ,  Yee Chia Yeo ,  Jinping Liu ,  Kheng Chok Tee ,  Wee Hong Phua ,  Lydia Wong

IPC分类号： H01L21/336

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L29/66628 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor device provides a semiconductor substrate with a gate and a number of source/drain regions on the semiconductor substrate. A layer containing a strain-inducing element is provided over the number of source/drain regions. The strain-inducing element is driven from the layer containing a strain-inducing element into the number of source/drain regions. A number of source/drains is formed in the number of source/drain regions.

摘要翻译： 半导体器件的制造方法在半导体衬底上提供具有栅极和多个源极/漏极区域的半导体衬底。 在源极/漏极区域的数量上提供包含应变诱发元件的层。 应变诱导元件从包含应变诱发元件的层驱动到源极/漏极区的数量。 在源极/漏极区域的数量上形成多个源极/漏极。

公开(公告)号：US20060030094A1

公开(公告)日：2006-02-09

申请号：US11016023

申请日：2004-12-16

申请人： King Chui ,  Ganesh Samudra ,  Yee Yeo ,  Jinping Liu ,  Kheng Tee ,  Wee Phua ,  Lydia Wong

发明人： King Chui ,  Ganesh Samudra ,  Yee Yeo ,  Jinping Liu ,  Kheng Tee ,  Wee Phua ,  Lydia Wong

IPC分类号： H01L21/8234

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L29/66628 ,  H01L29/7833

摘要： A method of manufacturing a semiconductor device provides a semiconductor substrate with a gate and a number of source/drain regions on the semiconductor substrate. A layer containing a strain-inducing element is provided over the number of source/drain regions. The strain-inducing element is driven from the layer containing a strain-inducing element into the number of source/drain regions. A number of source/drains is formed in the number of source/drain regions.

摘要翻译： 半导体器件的制造方法在半导体衬底上提供具有栅极和多个源/漏区域的半导体衬底。 在源极/漏极区域的数量上提供包含应变诱发元件的层。 应变诱导元件从包含应变诱发元件的层驱动到源极/漏极区的数量。 在源极/漏极区域的数量上形成多个源极/漏极。