利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.021 秒)

    Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
    1.
    发明授权
    Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing 失效
    化学机械抛光过程中厚度原位监测的方法和装置

    公开(公告)号：US06621584B2

    公开(公告)日：2003-09-16

    申请号：US09558877

    申请日：2000-04-26

    申请人： Jiri Pecen ,  Saket Chadda ,  Rahul Jairath ,  Wilbur C. Krusell

    发明人： Jiri Pecen ,  Saket Chadda ,  Rahul Jairath ,  Wilbur C. Krusell

    IPC分类号： G01B1106

    CPC分类号： B24B37/205 ,  B24B49/04 ,  G01B11/0683

    摘要： An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

    摘要翻译： 一种用于使用抛光工具和膜厚度监测器在基板的化学机械抛光（CMP）期间原位监测厚度的装置和方法。 工具上有一个开口。 该开头包含一个保护在其中的监控窗口，以创建监控通道。 膜厚监视器（包括椭圆偏振器，光束轮廓反射计或应力脉冲分析器）通过监测通道观察衬底，以提供由衬底承载的膜的厚度的指示。 该信息可用于确定CMP过程的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定衬底表面上的去除速率变化，以及优化除去速率和均匀性 。

    Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
    3.
    发明授权
    Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
    用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置

    公开(公告)号：US06261155B1

    公开(公告)日：2001-07-17

    申请号：US09527171

    申请日：2000-03-16

    申请人： Rahul Jairath ,  Jiri Pecen ,  Saket Chadda ,  Wilbur C. Krusell ,  Jerauld J. Cutini ,  Erik H. Engdahl

    发明人： Rahul Jairath ,  Jiri Pecen ,  Saket Chadda ,  Wilbur C. Krusell ,  Jerauld J. Cutini ,  Erik H. Engdahl

    IPC分类号： B24B100

    CPC分类号： B24B37/013 ,  B24B21/04 ,  B24B49/04 ,  B24D7/12 ,  H01L22/26

    摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

    摘要翻译： 用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。 也可以使用多个监视通道。 包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。 监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化 基板表面，并优化去除速率和均匀性。

    Method of transporting a semiconductor wafer in a wafer polishing system
    8.
    发明授权
    Method of transporting a semiconductor wafer in a wafer polishing system 失效
    在晶片抛光系统中输送半导体晶片的方法

    公开(公告)号：US06517418B2

    公开(公告)日：2003-02-11

    申请号：US09887950

    申请日：2001-06-22

    申请人： Erik H. Engdahl ,  Edward T. Ferri, Jr. ,  Wilbur C. Krusell ,  Rahul Jairath

    发明人： Erik H. Engdahl ,  Edward T. Ferri, Jr. ,  Wilbur C. Krusell ,  Rahul Jairath

    IPC分类号： B24B100

    CPC分类号： H01L21/31053 ,  B24B21/04 ,  B24B21/10 ,  B24B37/04 ,  B24B37/345 ,  B24B41/005

    摘要： A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

    摘要翻译： 提供了一种用于平坦化多个半导体晶片的系统和方法。 该方法包括以下步骤：使用至少两个抛光站沿着相同的处理路径处理每个晶片，以使晶片各自部分平坦化。 该系统包括改进的处理路径，在每个处理点处交换具有主轴的可拆卸晶片承载头并将处理点之间的旋转索引台中的分离的晶片承载头传送。 该系统还提供了使用具有气动可调节带张紧和对准能力的线性抛光机来提高抛光精度。

    Method and apparatus for polishing semiconductor wafers
    9.
    发明授权
    Method and apparatus for polishing semiconductor wafers 失效
    用于抛光半导体晶片的方法和装置

    公开(公告)号：US06336845B1

    公开(公告)日：2002-01-08

    申请号：US08968333

    申请日：1997-11-12

    申请人： Erik H. Engdahl ,  Edward T. Ferri, Jr. ,  Wilbur C. Krusell ,  Rahul Jairath ,  Randall L. Green ,  Anil Pant

    发明人： Erik H. Engdahl ,  Edward T. Ferri, Jr. ,  Wilbur C. Krusell ,  Rahul Jairath ,  Randall L. Green ,  Anil Pant

    IPC分类号： B24B722

    CPC分类号： H01L21/31053 ,  B24B21/04 ,  B24B21/10 ,  B24B37/04 ,  B24B37/345 ,  B24B41/005

    摘要： A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

    摘要翻译： 提供了一种用于平坦化多个半导体晶片的系统和方法。 该方法包括以下步骤：使用至少两个抛光站沿着相同的处理路径处理每个晶片，以使晶片各自部分平坦化。 该系统包括改进的处理路径，在每个处理点处交换具有主轴的可拆卸晶片承载头并将处理点之间的旋转索引台中的分离的晶片承载头传送。 该系统还提供了使用具有气动可调节带张紧和对准能力的线性抛光机来提高抛光精度。