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公开(公告)号：US20130088383A1
公开(公告)日：2013-04-11
申请号：US13269690
申请日：2011-10-10
Applicant: Johann Peter Forstner , Udo Gerlach
Inventor： Johann Peter Forstner , Udo Gerlach
CPC classification number: G01S7/02 , G01S7/032 , G01S13/584 , G01S13/931 , G01S2007/358 , G01S2013/0245 , G01S2013/9321 , H01Q1/3233 , H01Q3/24 , H01Q3/26 , H01Q21/06 , H04B7/0617
Abstract: One embodiment of the present invention relates to a radar transmitter comprised within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The radar transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.
Abstract translation: 本发明的一个实施例涉及一种包含在单个集成芯片基板内的雷达发射器，其能够对发射的雷达波束进行连续波束控制，以及改变发射雷达波束的原点的物理位置的选项。 雷达发射机具有产生RF信号的信号发生器。 RF信号被提供给多个独立的传输链，其包含被独立操作的矢量调制器，其被配置为向高频输入信号引入单独的相位调整以产生单独的RF输出信号。 控制单元被配置为选择性地激活（例如，两个或更多个）独立传输链的子集。 通过激活独立传输链的子集以产生具有分离相位的RF输出信号，能够实现波束导向功能。 此外，该子集限定了发射的雷达波束的可变位置。
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公开(公告)号：US08791854B2
公开(公告)日：2014-07-29
申请号：US13269690
申请日：2011-10-10
Applicant: Johann Peter Forstner , Udo Gerlach
Inventor： Johann Peter Forstner , Udo Gerlach
CPC classification number: G01S7/02 , G01S7/032 , G01S13/584 , G01S13/931 , G01S2007/358 , G01S2013/0245 , G01S2013/9321 , H01Q1/3233 , H01Q3/24 , H01Q3/26 , H01Q21/06 , H04B7/0617
Abstract: One embodiment of the present invention relates to a radar transmitter comprised within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The radar transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.
Abstract translation: 本发明的一个实施例涉及一种包含在单个集成芯片基板内的雷达发射器，其能够对发射的雷达波束进行连续波束控制，以及改变发射雷达波束的原点的物理位置的选项。 雷达发射机具有产生RF信号的信号发生器。 RF信号被提供给多个独立的传输链，其包含被独立操作的矢量调制器，其被配置为向高频输入信号引入单独的相位调整以产生单独的RF输出信号。 控制单元被配置为选择性地激活（例如，两个或更多个）独立传输链的子集。 通过激活独立传输链的子集以产生具有分离相位的RF输出信号，能够实现波束导向功能。 此外，该子集限定了发射的雷达波束的可变位置。
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3.发明授权公开(公告)号：US06518855B1
公开(公告)日：2003-02-11
申请号：US09623936
申请日：2001-02-05
Applicant: Udo Gerlach , Andreas Weisgerber
Inventor： Udo Gerlach , Andreas Weisgerber
IPC: H01P512
CPC classification number: H04B1/005 , H03K17/693 , H04B1/406 , H04B1/48
Abstract: Microwave circuit arrangement containing one or more semiconductor switching elements, which are characterized in that at least one semiconductor switching element is controlled or switched by alteration of the drain and source potentials, and for use of these circuits in mobile telephones or mobile radio transceivers.
Abstract translation: 包含一个或多个半导体开关元件的微波电路装置，其特征在于通过改变漏极和源极电位来控制或切换至少一个半导体开关元件，以及在移动电话或移动无线电收发器中使用这些电路。
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公开(公告)号：US08525272B2
公开(公告)日：2013-09-03
申请号：US12421920
申请日：2009-04-10
Applicant: Reinhard Losehand , Hans Taddiken , Udo Gerlach
Inventor： Reinhard Losehand , Hans Taddiken , Udo Gerlach
IPC: H01L29/76
CPC classification number: H01L27/088 , H01L29/1083 , H01L29/1087 , H03K17/6871 , H03K17/693
Abstract: A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode. The barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region.
Abstract translation: 开关晶体管包括具有衬底掺杂剂浓度的衬底和与衬底接壤的阻挡区，具有第一导电类型并且具有高于衬底掺杂剂浓度的势垒区掺杂剂浓度。 源极区域嵌入势垒区域中，并且具有第二导电类型并且具有高于势垒区掺杂剂浓度的掺杂剂浓度。 漏极区域嵌入在屏障区域中并且偏离源极区域。 排水区域具有第二导电类型和高于阻挡区掺杂剂浓度的掺杂剂浓度。 沟道区域在源极区域和漏极区域之间延伸，其中沟道区域包括阻挡区域的子区域。 绝缘区域覆盖沟道区域并且设置在沟道区域和栅电极之间。 选择势垒区掺杂剂浓度和衬底掺杂剂浓度以在源极区域和漏极区域周围产生空间电荷区域并用于耗尽阻挡区域。
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Patent Agency Ranking
公开(公告)号：US20090278206A1
公开(公告)日：2009-11-12
申请号：US12421920
申请日：2009-04-10
Applicant: Reinhard Losehand , Hans Taddiken , Udo Gerlach
Inventor： Reinhard Losehand , Hans Taddiken , Udo Gerlach
IPC: H01L29/06
CPC classification number: H01L27/088 , H01L29/1083 , H01L29/1087 , H03K17/6871 , H03K17/693
Abstract: A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode. The barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region.
Abstract translation: 开关晶体管包括具有衬底掺杂剂浓度的衬底和与衬底接壤的阻挡区，具有第一导电类型并且具有高于衬底掺杂剂浓度的势垒区掺杂剂浓度。 源极区域嵌入势垒区域中，并且具有第二导电类型并且具有高于势垒区掺杂剂浓度的掺杂剂浓度。 漏极区域嵌入在屏障区域中并且偏离源极区域。 排水区域具有第二导电类型和高于阻挡区掺杂剂浓度的掺杂剂浓度。 沟道区域在源极区域和漏极区域之间延伸，其中沟道区域包括阻挡区域的子区域。 绝缘区域覆盖沟道区域并且设置在沟道区域和栅电极之间。 选择势垒区掺杂剂浓度和衬底掺杂剂浓度以在源极区域和漏极区域周围产生空间电荷区域并用于耗尽阻挡区域。
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公开(公告)号：US07564103B2
公开(公告)日：2009-07-21
申请号：US11267013
申请日：2005-11-04
Applicant: Reinhard Losehand , Hans Taddiken , Udo Gerlach
Inventor： Reinhard Losehand , Hans Taddiken , Udo Gerlach
IPC: H01L29/76
CPC classification number: H01L27/088 , H01L29/1083 , H01L29/1087 , H03K17/6871 , H03K17/693
Abstract: A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
Abstract translation: 高频开关晶体管包括具有衬底掺杂剂浓度的衬底和与衬底接壤的屏障区域，该衬底具有第一导电类型，其中势垒区掺杂剂浓度高于衬底掺杂剂浓度。 此外，高频开关晶体管包括嵌入在阻挡区域中的源极区域，该源极区域包括与第一导电类型不同的第二导电类型，并且具有高于势垒区域掺杂剂浓度的源极区域掺杂剂浓度。 此外，高频开关晶体管包括嵌入阻挡区域中的漏极区域，并且偏离源极区域，该漏极区域包括第二导电类型，并且具有高于势垒区掺杂剂浓度的漏极区掺杂剂浓度。 此外，高频开关晶体管具有在源极区域之间延伸的沟道区域，其中沟道区域包括阻挡区域的子区域。 此外，高频开关晶体管具有覆盖沟道区域并且设置在沟道区域和栅电极之间的绝缘区域。 这样的高频开关晶体管允许以较高的高频信号幅度切换高频信号，如可由常规的高频开关晶体管切换的。
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公开(公告)号：US07750721B2
公开(公告)日：2010-07-06
申请号：US12100808
申请日：2008-04-10
Applicant: Nikolay Ilkov , Udo Gerlach
Inventor： Nikolay Ilkov , Udo Gerlach
CPC classification number: G05F3/30
Abstract: A reference current circuit has an input configured to receive an input current, a first transistor, a second transistor, and an output configured to provide a reference current. The input is directly connected to a control input of the second transistor and a first terminal of the first transistor, and is connected via a first resistor to a control input of the first transistor. The output is connected to a first terminal of the second transistor. A reference node is connected via a second resistor to the control input of the first transistor, directly to a second terminal of the first transistor and via a third resistor to a second terminal of the second transistor.
Abstract translation: 参考电流电路具有被配置为接收输入电流的输入，第一晶体管，第二晶体管和被配置为提供参考电流的输出。 输入直接连接到第二晶体管的控制输入和第一晶体管的第一端，并且经由第一电阻器连接到第一晶体管的控制输入端。 输出端连接到第二晶体管的第一端。 参考节点经由第二电阻器连接到第一晶体管的控制输入，直接连接到第一晶体管的第二端子，并且经由第三电阻器连接到第二晶体管的第二端子。
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公开(公告)号：US20090256628A1
公开(公告)日：2009-10-15
申请号：US12100808
申请日：2008-04-10
Applicant: Nikolay Ilkov , Udo Gerlach
Inventor： Nikolay Ilkov , Udo Gerlach
IPC: G05F3/16
CPC classification number: G05F3/30
Abstract: A reference current circuit has an input configured to receive an input current, a first transistor, a second transistor, and an output configured to provide a reference current. The input is directly connected to a control input of the second transistor and a first terminal of the first transistor, and is connected via a first resistor to a control input of the first transistor. The output is connected to a first terminal of the second transistor. A reference node is connected via a second resistor to the control input of the first transistor, directly to a second terminal of the first transistor and via a third resistor to a second terminal of the second transistor.
Abstract translation: 参考电流电路具有被配置为接收输入电流的输入，第一晶体管，第二晶体管和被配置为提供参考电流的输出。 输入直接连接到第二晶体管的控制输入和第一晶体管的第一端，并且经由第一电阻器连接到第一晶体管的控制输入端。 输出端连接到第二晶体管的第一端。 参考节点经由第二电阻器连接到第一晶体管的控制输入，直接连接到第一晶体管的第二端子，并且经由第三电阻器连接到第二晶体管的第二端子。
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公开(公告)号：US20060118884A1
公开(公告)日：2006-06-08
申请号：US11267013
申请日：2005-11-04
Applicant: Reinhard Losehand , Hans Taddiken , Udo Gerlach
Inventor： Reinhard Losehand , Hans Taddiken , Udo Gerlach
IPC: H01L29/76
CPC classification number: H01L27/088 , H01L29/1083 , H01L29/1087 , H03K17/6871 , H03K17/693
Abstract: A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
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