公开(公告)号：US20240213039A1

公开(公告)日：2024-06-27

申请号：US18288163

申请日：2022-04-28

申请人： Edwards Limited

发明人： Christopher Mark Bailey ,  Michael John Norrington ,  Stephen Phillip ,  Helen Shaw

IPC分类号： H01L21/67 ,  C23C16/44

CPC分类号： H01L21/67017 ,  C23C16/4411 ,  H01L21/6719

摘要： A system comprising: a semiconductor processing tool (102) comprising a process chamber (108); a valve module (104) configured to receive a fluid from the process chamber (108) and to selectably direct a flow of said fluid; and a cooling apparatus (402) configured to supply a flow of a cooling fluid to the process chamber (108); wherein the valve module (104) and the cooling apparatus (402) are arranged in a stacked configuration.

公开(公告)号：US20240034635A1

公开(公告)日：2024-02-01

申请号：US18266176

申请日：2021-12-13

申请人： Zadient Technologies SAS

发明人： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC分类号： C01B32/956 ,  C30B25/14 ,  C23C16/44 ,  C30B29/36

CPC分类号： C01B32/956 ,  C30B25/14 ,  C23C16/4411 ,  C30B29/36

摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

公开(公告)号：US11713505B2

公开(公告)日：2023-08-01

申请号：US17250809

申请日：2019-09-03

申请人： AIXTRON SE

发明人： Peter Sebald Lauffer

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： C23C16/4411 ,  C23C16/52

摘要： A CVD reactor may include a susceptor, process chamber and heat dissipation body. In the CVD reactor, one or more layers can be deposited on one or more substrates. The susceptor is heated by a heating devices. Heat is transported from susceptor, through a process chamber towards the process chamber ceiling, through the process chamber ceiling, and from the process chamber ceiling through a gap space to the heat dissipation body. The temperature of the process chamber ceiling is measured at at least two different azimuth angle positions about a central axis of the process chamber. The radial distance of the respective measurement points or zones from the central axis of the process chamber may be equal to one another. The at least two temperature measurement values are used to produce an average value or a difference value.

公开(公告)号：US11664245B2

公开(公告)日：2023-05-30

申请号：US16927908

申请日：2020-07-13

申请人： ASM IP Holding B.V.

发明人： JuIll Lee

IPC分类号： H01L21/67 ,  F25D17/08 ,  F25D29/00 ,  F25D25/00 ,  C23C16/44

CPC分类号： H01L21/67109 ,  F25D17/08 ,  F25D25/00 ,  F25D29/005 ,  C23C16/4411

摘要： Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss and power consumed when heating the chamber to a certain temperature and reducing safety problems such as burning of an operator.

公开(公告)号：US20180195171A1

公开(公告)日：2018-07-12

申请号：US15863700

申请日：2018-01-05

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Jian Fei SHEN ,  Yang WANG

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： C23C16/4411 ,  C23C14/541 ,  C23C16/44 ,  C23C16/463 ,  C23C16/52 ,  C23C18/1691

摘要： A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.

公开(公告)号：US20180053670A1

公开(公告)日：2018-02-22

申请号：US15637930

申请日：2017-06-29

申请人： Applied Materials, Inc.

发明人： Shinichi OKI ,  Yoshinobu MORI ,  Yuji AOKI

IPC分类号： H01L21/67 ,  C23C16/48 ,  H01L21/20

CPC分类号： H01L21/67248 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/455 ,  C23C16/466 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  H01L21/20

摘要： An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

公开(公告)号：US20180016675A1

公开(公告)日：2018-01-18

申请号：US15544430

申请日：2016-01-15

申请人： OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKON

发明人： Siegfried KRASSNITZER ,  Markus ESSELBACH

IPC分类号： C23C14/54 ,  C23C14/24

CPC分类号： C23C16/4411 ,  C23C14/24 ,  C23C14/325 ,  C23C14/541 ,  C23C16/466

摘要： The invention relates to a vacuum chamber for the treatment of substances, comprising at least the following elements: heat supply elements for the heat supply into a treatment area of the vacuum chamber, in which at least one substrate (10) can be treated, a chamber wall (20), through which heat can be removed from the treatment area, comprising an inner and an outer chamber wall side, and a shielding wall (30), which is arranged between the chamber wall (20) and the treatment area, such that an averted shielding wall side regarding to the treatment area is placed opposite the inner chamber wall side, and characterized in, that the shielding wall side placed opposite the inner chamber wall side is at least partially, preferred largely applied with a first coating (31), which has an emission coefficient ε≧0.65.

公开(公告)号：US20170369995A1

公开(公告)日：2017-12-28

申请号：US15628710

申请日：2017-06-21

申请人： University of South Carolina

发明人： Asif Khan

IPC分类号： C23C16/44 ,  C23C16/30 ,  H01L21/02

CPC分类号： C23C16/4411 ,  C23C16/303 ,  C23C16/34 ,  C23C16/4409 ,  C23C16/45565 ,  C23C16/45578 ,  C30B25/00 ,  H01L21/0254 ,  H01L21/0262

摘要： An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500° C.

公开(公告)号：US20170088949A1

公开(公告)日：2017-03-30

申请号：US14957440

申请日：2015-12-02

申请人： Applied Materials, Inc.

发明人： Viachslav BABAYAN ,  Qiwei LIANG ,  Tobin KAUFMAN-OSBORN ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC分类号： C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  C23C16/46

CPC分类号： C23C16/4485 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45517 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771

摘要： The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US20160265107A1

公开(公告)日：2016-09-15

申请号：US15055737

申请日：2016-02-29

申请人： Tokyo Electron Limited

发明人： Masami OIKAWA

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01L21/687

CPC分类号： C23C16/452 ,  C23C16/4411 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4585 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32743 ,  H01L21/67303 ,  H01L21/67309

摘要： A substrate holder holds a stack of substrates to be plasma-processed, and includes a ring-shaped part to be placed between adjacent substrates each of which includes a process surface to be plasma-processed and a non-process surface opposite from the process surface. The ring-shaped part includes a facing surface that faces the process surface of one of the adjacent substrates, and a protrusion formed along the outer periphery of the facing surface.

摘要翻译： 衬底保持器保持要等离子体处理的一叠衬底，并且包括要放置在相邻衬底之间的环形部件，每个衬底包括待等离子体处理的工艺表面和与工艺表面相对的非工艺表面 。 环状部分包括面向相邻基板之一的处理表面的面对表面和沿着相对表面的外周形成的突起。