摘要:
This is generally directed to systems and methods for reduced metal lines and control signals in an imaging system. For example, in some embodiments a pixel cell of an imaging system can operate without a row select transistor, and therefore can operate without a row select metal control line. As another example, in some embodiments a pixel cell can share its reset transistor control line with a transfer transistor control line of another pixel cell. In this manner, an imaging system can be created that averages a single metal line per pixel cell. In some embodiments, operation of such reduced-metal line imaging systems can use modified timing schemes of control signals.
摘要:
This is generally directed to systems and methods for reduced metal lines and control signals in an imaging system. For example, in some embodiments a pixel cell of an imaging system can operate without a row select transistor, and therefore can operate without a row select metal control line. As another example, in some embodiments a pixel cell can share its reset transistor control line with a transfer transistor control line of another pixel cell. In this manner, an imaging system can be created that averages a single metal line per pixel cell. In some embodiments, operation of such reduced-metal line imaging systems can use modified timing schemes of control signals.
摘要:
Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.
摘要:
Methods, systems and apparatuses for using regular and/or dark pixels of a pixel array in either a fixed or dynamic fashion to compensate for fixed pattern noise.
摘要:
Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.
摘要:
A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST—LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.
摘要:
Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.
摘要:
A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST—LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.
摘要:
Imaging devices having reduced fixed pattern noise are disclosed. The fixed pattern noise in the imaging devices is reduced by measuring and adjusting the spectral characteristics of the imager device on a pixel by pixel basis. The fixed pattern noise of the pixel cells are changed by modifying the absorption, reflectance, refractive index, shape, and/or micro structure of the material.
摘要:
A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.