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公开(公告)号：US07935942B2
公开(公告)日：2011-05-03
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中 冷却晶片进行离子注入工艺。
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公开(公告)号：US20080044938A1
公开(公告)日：2008-02-21
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站， 冷却晶片进行离子注入工艺。
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公开(公告)号：US20110207308A1
公开(公告)日：2011-08-25
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/265 , H01L21/683
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部 冷却晶片经历离子注入工艺的工位。
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公开(公告)号：US08319196B2
公开(公告)日：2012-11-27
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到最后 冷却晶片经历离子注入工艺的工位。
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公开(公告)号：US20130225414A1
公开(公告)日：2013-08-29
申请号：US13493757
申请日：2012-06-11
IPC分类号： H02H9/08
CPC分类号： G01R31/00 , G01R33/1238 , H02H7/001 , H02H9/08 , Y02E40/68
摘要： Techniques for improving reliability of a superconducting fault current limiting system (SCFCL) are provided. In one particular exemplary embodiment, the techniques may be realized with a superconducting fault current limiting system (SCFCL) comprising: an input current lead and an output current lead, each current lead coupled to a power distribution/transmission network; a container; a superconductor contained in the container; a shunt disposed outside the container and in parallel with the superconductor; a cryogenic system configured to provide coolant into the container; and at least one sensor disposed near and configured to monitor at least one operating condition of at least one of the input current lead and the output current lead, the superconductor, and the shunt.
摘要翻译： 提供了一种用于提高超导故障限流系统（SCFCL）可靠性的技术。 在一个特定的示例性实施例中，可以用超导故障电流限制系统（SCFCL）来实现这些技术，该系统包括：输入电流引线和输出电流引线，每个电流引线耦合到配电/传输网络; 一个容器 包含在容器中的超导体; 设置在容器外部并与超导体平行的分流器; 构造成将冷却剂提供到所述容器中的低温系统; 以及至少一个传感器，其设置在接近并被配置为监视输入电流引线和输出电流引线，超导体和分流器中的至少一个的至少一个操作条件。
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公开(公告)号：US20210321876A1
公开(公告)日：2021-10-21
申请号：US17236816
申请日：2021-04-21
摘要： An automatic system and method for non-invasive imaging and identification of specific ocular structures of the eye and adnexa tissues by synchronous segmentation of visual and infrared images; that can produce spatial temperature profiles within each segmented area of the eye and adnexa; that can track eye and head movement and eye-blinks during the period of measurement to remove artefacts and maintain synchronicity; that can track ocular surface and eye adnexa temperature profiles over time; that can assist in diagnosis of eye disease; that can produce diagnostic indicators for ocular disease diagnosis and study of the eye. The system comprises infrared and visible light cameras for imaging the ocular structures, and a digital signal processing unit for processing the acquired infrared and visible images to output segmentations of the images for identification of different areas of the eye surface, including pupil, cornea, conjunctiva, and eyelids. The system further captures synchronous infrared and visible images from each segmented area of the ocular surface over the time of measurement. A digital signal processing unit processes and analyzes the infrared and visible images to generate descriptive outputs on temporal and spatial changes in the infrared and visible images over the time of measurement, as well as produce diagnostic indicators for ocular disease diagnosis and study of the eye.
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公开(公告)号：US08611056B2
公开(公告)日：2013-12-17
申请号：US13415976
申请日：2012-03-09
IPC分类号： H01L39/00
CPC分类号： H01L39/16
摘要： A superconducting fault current limiter (SCFCL) includes a cryogenic tank defining an interior volume, a superconductor disposed in the interior volume, and a refrigeration system configured to adjust a temperature of the superconductor in response to a condition during a steady state operation of the SCFCL. A method of operating a SCFCL includes cooling a superconductor disposed within an interior volume of a cryogenic tank to a temperature less than a critical temperature of the superconductor, and adjusting the temperature of the superconductor in response to a condition during a steady state operation of the SCFCL.
摘要翻译： 超导故障限流器（SCFCL）包括限定内部容积的低温罐，设置在内部容积中的超导体，以及构造成响应于在SCFCL的稳态运行期间的状态来调节超导体的温度的制冷系统 。 一种操作SCFCL的方法包括：将设置在低温罐的内部容积内的超导体冷却到低于超导体的临界温度的温度，以及响应于稳态运行期间的状态来调节超导体的温度 SCFCL。
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公开(公告)号：US20120257313A1
公开(公告)日：2012-10-11
申请号：US13415976
申请日：2012-03-09
IPC分类号： H02H9/02
CPC分类号： H01L39/16
摘要： A superconducting fault current limiter (SCFCL) includes a cryogenic tank defining an interior volume, a superconductor disposed in the interior volume, and a refrigeration system configured to adjust a temperature of the superconductor in response to a condition during a steady state operation of the SCFCL. A method of operating a SCFCL includes cooling a superconductor disposed within an interior volume of a cryogenic tank to a temperature less than a critical temperature of the superconductor, and adjusting the temperature of the superconductor in response to a condition during a steady state operation of the SCFCL.
摘要翻译： 超导故障限流器（SCFCL）包括限定内部容积的低温罐，设置在内部容积中的超导体，以及构造成响应于在SCFCL的稳态运行期间的状态来调节超导体的温度的制冷系统 。 一种操作SCFCL的方法包括：将设置在低温罐的内部容积内的超导体冷却到低于超导体的临界温度的温度，以及响应于稳态运行期间的状态来调节超导体的温度 SCFCL。
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公开(公告)号：US20110308078A1
公开(公告)日：2011-12-22
申请号：US13161068
申请日：2011-06-15
申请人： Paul J. Murphy
发明人： Paul J. Murphy
IPC分类号： H05K13/00
CPC分类号： H02H9/02 , H01L39/16 , H02H9/023 , Y02E40/69 , Y10T29/49002 , Y10T29/49014 , Y10T29/49117
摘要： Several embodiments of a novel technique for limiting transmission of fault current are disclosed. Current power distribution systems typically have an impedance, or reactor, on the output of the network equipment to limit current in the case of a fault condition. A low resistance switch, which changes its resistance in the presence of high current, is connected in parallel with this reactor. Thus, in normal operation, the current from the power generator bypasses the reactor, thereby minimizing power loss. However, in the presence of a fault, the resistance of the switch increases, forcing the current to pass through the reactor, thereby limiting the fault current.
摘要翻译： 公开了用于限制故障电流传输的新技术的几个实施例。 目前的配电系统通常在网络设备的输出端具有阻抗或电抗器，以在故障情况下限制电流。 在高电流存在下改变其电阻的低电阻开关与该反应器并联连接。 因此，在正常工作中，来自发电机的电流绕过电抗器，由此最小化功率损耗。 然而，在存在故障的情况下，开关的电阻增加，迫使电流通过电抗器，从而限制故障电流。
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公开(公告)号：US07047228B1
公开(公告)日：2006-05-16
申请号：US09420696
申请日：1999-10-19
申请人： Paul J. Murphy
发明人： Paul J. Murphy
IPC分类号： G06F17/30
CPC分类号： G06Q10/087 , Y10S707/99931
摘要： A system and method of component procurement efficiently provides a centralized location for storing and retrieving component data. The engineering method is for procuring a manufactured component through a plurality of development stages. According to one embodiment, the method includes providing a database for storing information related to procuring the manufactured component, sharing the database among a plurality of relevant parties such as a manufacturer and a supplier and inputting data into the database by at least one of the relevant parties during a development stage of the manufactured component. The method also includes modifying the database at each development stage if necessary. The database holds data related to procurement of components for a computer system and is accessible to a manufacturer and at least one outside vendor. The database includes a pointer for locating data related to at least one of the development stages. The data in the database includes procurement-related data such as production information, testing information, regulatory information, and cost information. The database is stored on a memory and includes a plurality of partitions, each partition relating to manufacturing the component. The database also includes a plurality of fields within each partition, the plurality of fields for logging information related to a plurality of manufacturing development stages. The database also includes a plurality of storage locations for storing data related to the plurality of partitions.
摘要翻译： 组件采购的系统和方法有效地提供用于存储和检索组件数据的集中位置。 工程方法是通过多个开发阶段采购制造的部件。 根据一个实施例，该方法包括提供数据库，用于存储与采购制造的部件相关的信息，在诸如制造商和供应商的多个相关方之间共享数据库，并通过至少一个相关的数据输入数据 在制造部件的开发阶段的各方。 该方法还包括在必要时在每个开发阶段修改数据库。 数据库保存与计算机系统的组件采购相关的数据，并可由制造商和至少一个外部供应商访问。 数据库包括用于定位与至少一个开发阶段有关的数据的指针。 数据库中的数据包括采购相关数据，如生产信息，测试信息，监管信息和成本信息。 数据库存储在存储器上并且包括多个分区，每个分区涉及制造该组件。 数据库还包括每个分区内的多个字段，用于记录与多个制造开发阶段有关的信息的多个字段。 数据库还包括用于存储与多个分区有关的数据的多个存储位置。
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