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    Technique for low-temperature ion implantation
    1.
    发明授权
    Technique for low-temperature ion implantation 有权
    低温离子注入技术

    公开(公告)号：US07935942B2

    公开(公告)日：2011-05-03

    申请号：US11504367

    申请日：2006-08-15

    申请人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01J37/00

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中 冷却晶片进行离子注入工艺。

    Technique for low-temperature ion implantation
    2.
    发明申请
    Technique for low-temperature ion implantation 有权
    低温离子注入技术

    公开(公告)号：US20080044938A1

    公开(公告)日：2008-02-21

    申请号：US11504367

    申请日：2006-08-15

    申请人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站， 冷却晶片进行离子注入工艺。

    Techniques for temperature controlled ion implantation
    4.
    发明申请
    Techniques for temperature controlled ion implantation 有权
    温度控制离子注入技术

    公开(公告)号：US20080076194A1

    公开(公告)日：2008-03-27

    申请号：US11525878

    申请日：2006-09-23

    申请人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    发明人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    IPC分类号： H01L21/425

    CPC分类号： H01J37/3171 ,  H01J2237/2001

    摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

    摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
    5.
    发明申请
    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION 审中-公开
    用于绝缘子绝缘子制造的单波长植绒

    公开(公告)号：US20090084988A1

    公开(公告)日：2009-04-02

    申请号：US11862810

    申请日：2007-09-27

    申请人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    发明人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    IPC分类号： G21K5/08

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/0815 ,  H01J2237/2001 ,  H01J2237/31703 ,  H01L21/67109 ,  H01L21/6831

    摘要： An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.

    摘要翻译： 公开了一种离子注入机。 一个这样的离子注入机包括被配置为将氧，氮，氦或氢离子产生到具有特定剂量范围的离子束中的离子束源，以及被配置为从离子束去除不想要的物质的分析器磁体。 离子注入机包括具有后侧气体热耦合的静电卡盘，其被配置为保持单个工件用于通过离子束进行绝缘体上硅的注入，并且被配置为将工件冷却至约300℃的温度 至600℃

    Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
    6.
    发明授权
    Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 有权
    使用快速离子束控制的固定射束离子注入过程中毛刺恢复的方法和装置

    公开(公告)号：US07361913B2

    公开(公告)日：2008-04-22

    申请号：US11241894

    申请日：2005-09-30

    申请人： Russell J. Low ,  Joseph C. Olson ,  David R. Timberlake ,  James R. McLane ,  Mark D. Saunders ,  James J. Cummings ,  Thomas B. Callahan ,  Jonathan England

    发明人： Russell J. Low ,  Joseph C. Olson ,  David R. Timberlake ,  James R. McLane ,  Mark D. Saunders ,  James J. Cummings ,  Thomas B. Callahan ,  Jonathan England

    IPC分类号： G21K5/10 ,  H01J37/08

    CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31761 ,  Y10S438/961

    摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

    摘要翻译： 离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片 以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而 在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3） 操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。 操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

    Methods of implanting ions and ion sources used for same
    7.
    发明申请
    Methods of implanting ions and ion sources used for same 审中-公开
    植入离子和离子源的方法

    公开(公告)号：US20070178678A1

    公开(公告)日：2007-08-02

    申请号：US11342183

    申请日：2006-01-28

    申请人： Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

    发明人： Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

    IPC分类号： H01L21/26

    CPC分类号： H01J37/08 ,  C23C14/48 ,  H01J27/02 ,  H01J37/3171

    摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

    摘要翻译： 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。 使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热 阴极（IHC），伯纳斯）在使用过程中产生这种温度。

    TECHNIQUES FOR PREVENTING PARASITIC BEAMLETS FROM AFFECTING ION IMPLANTATION
    8.
    发明申请
    TECHNIQUES FOR PREVENTING PARASITIC BEAMLETS FROM AFFECTING ION IMPLANTATION 有权
    防止离子植入的PARASITIC BEAMLETS的技术

    公开(公告)号：US20070125955A1

    公开(公告)日：2007-06-07

    申请号：US11567485

    申请日：2006-12-06

    申请人： Russell LOW ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

    发明人： Russell LOW ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

    IPC分类号： H01J3/14

    CPC分类号： H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

    摘要： Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

    摘要翻译： 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

    Technique for improving ion implanter productivity
    9.
    发明申请
    Technique for improving ion implanter productivity 有权
    提高离子注入机生产率的技术

    公开(公告)号：US20070045570A1

    公开(公告)日：2007-03-01

    申请号：US11394825

    申请日：2006-03-31

    申请人： Craig Chaney ,  Russell Low ,  Jonathan England

    发明人： Craig Chaney ,  Russell Low ,  Jonathan England

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/0822 ,  H01J2237/0827 ,  H01J2237/31705

    摘要： A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gaseous substance to the ion source chamber, the gaseous substance comprising one or more reactive species for generating ions for the ion implanter. The method may also comprise stopping the supply of the gaseous substance to the ion source chamber. The method may further comprise supplying a hydrogen containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance.

    摘要翻译： 公开了一种改善离子注入机生产率的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于提高具有离子源室的离子注入机的生产率的方法。 该方法可以包括向离子源室供应气态物质，该气态物质包含用于产生用于离子注入机的离子的一种或多种反应性物质。 该方法还可以包括停止向离子源室供应气态物质。 该方法还可以包括在停止供应气态物质后的一段时间内向离子源室供应含氢气体。