公开(公告)号：US07906206B2

公开(公告)日：2011-03-15

申请号：US11204102

申请日：2005-08-16

申请人： Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

发明人： Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

IPC分类号： B32B5/16 ,  C08K5/00 ,  H01L51/30

CPC分类号： H01L21/02118 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31691 ,  H01L51/0537 ,  Y10T428/25

摘要： An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

摘要翻译： 一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。 更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。 在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管 和低阈值电压。

公开(公告)号：US20060180809A1

公开(公告)日：2006-08-17

申请号：US11204102

申请日：2005-08-16

申请人： Jong Park ,  Hyun Park ,  Bon Koo ,  Sang Lee ,  Lyong Pu ,  Kakimoto Masaaki

发明人： Jong Park ,  Hyun Park ,  Bon Koo ,  Sang Lee ,  Lyong Pu ,  Kakimoto Masaaki

IPC分类号： H01L29/08

CPC分类号： H01L21/02118 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31691 ,  H01L51/0537 ,  Y10T428/25

摘要： An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

摘要翻译： 一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。 更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。 在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管 和低阈值电压。