公开(公告)号：US07906206B2

公开(公告)日：2011-03-15

申请号：US11204102

申请日：2005-08-16

申请人： Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

发明人： Jong Jin Park ,  Hyun Jung Park ,  Bon Won Koo ,  Sang Yoon Lee ,  Lyong Sun Pu ,  Kakimoto Masaaki

IPC分类号： B32B5/16 ,  C08K5/00 ,  H01L51/30

CPC分类号： H01L21/02118 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/31691 ,  H01L51/0537 ,  Y10T428/25

摘要： An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.

摘要翻译： 一种有机绝缘体组合物，其包含分散在超支化聚合物中的高介电常数绝缘体和使用该绝缘体组合物的有机薄膜晶体管。 更具体地，有机薄膜晶体管包括基板，栅电极，栅极绝缘层，源电极，漏电极和有机半导体层，其中栅绝缘层由有机绝缘体组合物制成。 在形成栅极绝缘层中使用绝缘体组合物允许在室温下通过旋涂均匀地形成栅极绝缘层，并且能够制造同时满足高电荷载流子迁移率要求的有机薄膜晶体管 和低阈值电压。

公开(公告)号：US07241652B2

公开(公告)日：2007-07-10

申请号：US11123120

申请日：2005-05-06

申请人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

发明人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/052 ,  H01L51/105

摘要： Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

摘要翻译： 本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源/漏电极和有机半导体层，其中源绝缘膜的表面 /漏电极浸渍无机或有机酸，然后进行退火。 根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。 此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

公开(公告)号：US07005674B2

公开(公告)日：2006-02-28

申请号：US10769816

申请日：2004-02-03

申请人： Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Young Hun Byun ,  Bon Won Koo ,  In Nam Kang

发明人： Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Young Hun Byun ,  Bon Won Koo ,  In Nam Kang

IPC分类号： H01L35/24 ,  H01L29/76

CPC分类号： H01L51/0545 ,  H01L21/31604 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0537

摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

摘要翻译： 一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层， 依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高/低电流，并且可以通过湿法制备。

公开(公告)号：US07364940B2

公开(公告)日：2008-04-29

申请号：US11296704

申请日：2005-12-08

申请人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

发明人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

IPC分类号： H01L51/40

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

公开(公告)号：US08017245B2

公开(公告)日：2011-09-13

申请号：US11128309

申请日：2005-05-13

申请人： Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Bon Won Koo ,  Young Hun Byun ,  Eun Mi Seo

发明人： Sang Yoon Lee ,  Jong Jin Park ,  Yi Yeol Lyu ,  Bon Won Koo ,  Young Hun Byun ,  Eun Mi Seo

IPC分类号： H01L23/29

CPC分类号： H01L21/02126 ,  C08G77/04 ,  C08K5/057 ,  C08K5/56 ,  C08L83/04 ,  C09D183/06 ,  H01B3/18 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0052 ,  H01L51/0537 ,  Y10T428/31504 ,  Y10T428/31663 ,  C08L2666/02

摘要： A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

摘要翻译： 一种用于制备有机绝缘体的组合物，所述组合物包含（i）至少一种有机 - 无机混合材料; （ii）至少一种有机金属化合物和/或有机聚合物; 和（iii）用于溶解上述两种组分的至少一种溶剂，使得使用该溶剂的有机绝缘体具有低阈值电压和驱动电压，以及高的载流子迁移率和离子/离子比，从而提高绝缘体特性。 此外，有机绝缘膜的制备可以通过湿法进行，从而实现了工艺的简化和成本的削减。

公开(公告)号：US08617709B2

公开(公告)日：2013-12-31

申请号：US12078778

申请日：2008-04-04

申请人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

发明人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

IPC分类号： B32B5/16

CPC分类号： C07D271/113 ,  B82Y20/00 ,  C07B2200/11 ,  C07F7/1804 ,  H01L51/5088 ,  H01L51/5092 ,  H01L2251/5369 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.

摘要翻译： 本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。 包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性 在电极上形成缓冲层，从而提高电子器件的效率。

公开(公告)号：US20090045396A1

公开(公告)日：2009-02-19

申请号：US12078403

申请日：2008-03-31

申请人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

发明人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  G03F7/00 ,  H01L51/40 ,  C08F2/46

CPC分类号： G03F7/092 ,  G03F7/0046 ,  G03F7/038

摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.

摘要翻译： 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。

公开(公告)号：US20070194386A1

公开(公告)日：2007-08-23

申请号：US11604826

申请日：2006-11-28

申请人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

发明人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

IPC分类号： H01L29/94

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/0545 ,  H01L2251/308

摘要： Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

摘要翻译： 公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

公开(公告)号：US08476103B2

公开(公告)日：2013-07-02

申请号：US13355940

申请日：2012-01-23

申请人： Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

发明人： Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/0512 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0558

摘要： Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

摘要翻译： 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

公开(公告)号：US07834352B2

公开(公告)日：2010-11-16

申请号：US11972847

申请日：2008-01-11

申请人： Tae Woo Lee ,  Young Hun Byun ,  Yi Yeol Lyu ,  Sang Yoon Lee ,  Bon Won Koo

发明人： Tae Woo Lee ,  Young Hun Byun ,  Yi Yeol Lyu ,  Sang Yoon Lee ,  Bon Won Koo

IPC分类号： H01L31/00

CPC分类号： H01L51/0021 ,  B82Y10/00 ,  H01L51/0015 ,  H01L51/0046 ,  H01L51/0545

摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

摘要翻译： 制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过 解决过程。 在该方法中，简化了制造并降低了制造成本。 由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。