公开(公告)号：US20120091533A1

公开(公告)日：2012-04-19

申请号：US13243338

申请日：2011-09-23

申请人： Jong Pil KIM ,  Woncheol Jeong

发明人： Jong Pil KIM ,  Woncheol Jeong

IPC分类号： H01L27/092

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and a second etching stop film can be on the substrate in the PMOS region. A contact hole can penetrate the first and second etching stop films and a contact plug can be in the contact hole. A thickness of the first etching stop film can be greater than a thickness of the second etching stop film. Related methods are also disclosed.

摘要翻译： 半导体器件可以包括包括NMOS区和PMOS区的衬底。 栅极结构可以包括栅极图案和间隔物图案，其中栅极结构在衬底上。 第一蚀刻停止膜可以在NMOS区域的衬底上，并且第二蚀刻停止膜可以在PMOS区域中的衬底上。 接触孔可以穿透第一和第二蚀刻停止膜，并且接触插塞可以在接触孔中。 第一蚀刻停止膜的厚度可以大于第二蚀刻停止膜的厚度。 还公开了相关方法。

公开(公告)号：US20160013188A1

公开(公告)日：2016-01-14

申请号：US14859764

申请日：2015-09-21

申请人： Jong Pil KIM ,  Woncheol JEONG

发明人： Jong Pil KIM ,  Woncheol JEONG

IPC分类号： H01L27/092 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and a second etching stop film can be on the substrate in the PMOS region. A contact hole can penetrate the first and second etching stop films and a contact plug can be in the contact hole. A thickness of the first etching stop film can be greater than a thickness of the second etching stop film. Related methods are also disclosed.

摘要翻译： 半导体器件可以包括包括NMOS区和PMOS区的衬底。 栅极结构可以包括栅极图案和间隔物图案，其中栅极结构在衬底上。 第一蚀刻停止膜可以在NMOS区域的衬底上，并且第二蚀刻停止膜可以在PMOS区域中的衬底上。 接触孔可以穿透第一和第二蚀刻停止膜，并且接触插塞可以在接触孔中。 第一蚀刻停止膜的厚度可以大于第二蚀刻停止膜的厚度。 还公开了相关方法。

公开(公告)号：US20120043811A1

公开(公告)日：2012-02-23

申请号：US13026480

申请日：2011-02-14

申请人： Yeon Ho JEONG ,  Chong Eun KIM ,  Jong Pil KIM ,  Don Sik KIM

发明人： Yeon Ho JEONG ,  Chong Eun KIM ,  Jong Pil KIM ,  Don Sik KIM

IPC分类号： H02M7/217

CPC分类号： H02J9/005 ,  G06F1/26 ,  H02M2001/0032 ,  H02M2001/008 ,  Y02B70/16 ,  Y10T307/406

摘要： A power supply having improved system efficiency includes: a standby stage converting a DC voltage into an operating voltage and a first standby voltage, which have a preset magnitude, and supplying the first standby voltage to a standby output terminal; a DC/DC stage supplied with the operating voltage from the standby stage, converting the DC voltage into a main voltage having a preset magnitude, and supplying the main voltage to a main output terminal; and a main/standby stage converting the main voltage from the DC/DC stage into a second standby voltage having a preset magnitude, and supplying the second standby voltage to the standby output terminal.

摘要翻译： 具有提高的系统效率的电源包括：备用级将DC电压转换为具有预设量值的工作电压和第一备用电压，并将第一待机电压提供给备用输出端子; DC / DC级，其被提供有来自待机级的工作电压，将DC电压转换成具有预设幅度的主电压，并将主电压提供给主输出端; 以及将主电压从DC / DC级转换为具有预设幅度的第二备用电压的主/备台，并将第二待机电压提供给备用输出端。

公开(公告)号：US20080169465A1

公开(公告)日：2008-07-17

申请号：US11957575

申请日：2007-12-17

申请人： Hyoung Soo KO ,  Byung Gook PARK ,  Seung Bum HONG ,  Chul Min PARK ,  Woo Young CHOI ,  Jong Pil KIM ,  Jae Young SONG ,  Sang Wan KIM

发明人： Hyoung Soo KO ,  Byung Gook PARK ,  Seung Bum HONG ,  Chul Min PARK ,  Woo Young CHOI ,  Jong Pil KIM ,  Jae Young SONG ,  Sang Wan KIM

IPC分类号： H01L21/8234 ,  H01L23/58

CPC分类号： H01L29/0847 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/78

摘要： A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.

摘要翻译： 探针的制造方法包括：使用形成在硅衬底上的第一蚀刻掩模图案，通过各向异性蚀刻工艺形成探针的第一倾斜面; 形成第一半导体电极区域; 在所述硅衬底上与所述第一蚀刻掩模图案的相反方向形成第二蚀刻掩模图案; 在所述第二蚀刻掩模图案的侧壁上形成间隔层; 形成探针的第二倾斜面; 形成第二半导体电极区域; 在所得硅衬底上形成氧化硅层图案; 在氧化硅层图案的两个侧壁上形成间隔层; 并将硅衬底蚀刻到预定深度。

公开(公告)号：US20110032062A1

公开(公告)日：2011-02-10

申请号：US12907497

申请日：2010-10-19

申请人： Gun Woo MOON ,  Tae Won HEO ,  Chong Eun KIM ,  Ki Bum PARK ,  Don Sik KIM ,  Jong Pil KIM ,  Sang Cheol BONG ,  Dong Wook LEE ,  Dong Joong KIM

发明人： Gun Woo MOON ,  Tae Won HEO ,  Chong Eun KIM ,  Ki Bum PARK ,  Don Sik KIM ,  Jong Pil KIM ,  Sang Cheol BONG ,  Dong Wook LEE ,  Dong Joong KIM

IPC分类号： H01F27/28

CPC分类号： H01F38/08

摘要： There is provided a transformer improved in leakage inductance including: a core having first, second and third legs electromagnetically coupled to one another; a primary winding formed of a conductor having one end and another end receiving power from the outside and dividedly wound around the first, second and third legs; and a secondary winding wound around at least one of the first, second and third legs and receiving induced power by electromagnetic induction with the primary winding.

摘要翻译： 提供了一种改进了漏电感的变压器，包括：具有彼此电磁耦合的第一，第二和第三支脚的芯体; 由具有一端的导体形成的初级绕组，而另一端从外部接收功率并且分别缠绕在第一，第二和第三支腿上; 以及绕第一，第二和第三腿中的至少一个缠绕的次级绕组，并且通过与初级绕组的电磁感应接收感应功率。

公开(公告)号：US20100246225A1

公开(公告)日：2010-09-30

申请号：US12648702

申请日：2009-12-29

申请人： Gun Woo MOON ,  Don Sik KIM ,  Kyu Min CHO ,  Young Do KIM ,  Dae Min JANG ,  Chong Eun KIM ,  Jong Pil KIM ,  Dong Joong KIM ,  Tae Won HEO ,  Sang Cheol BONG

发明人： Gun Woo MOON ,  Don Sik KIM ,  Kyu Min CHO ,  Young Do KIM ,  Dae Min JANG ,  Chong Eun KIM ,  Jong Pil KIM ,  Dong Joong KIM ,  Tae Won HEO ,  Sang Cheol BONG

IPC分类号： H02M7/219

CPC分类号： H02M3/156 ,  H02M1/4225 ,  H02M2001/0032 ,  Y02B70/126 ,  Y02B70/16

摘要： The present invention provides a power supply for a server including: a PFC (Power Factor Correction) unit for meeting harmonic regulation by being connected to an input power source; a DC/DC unit including a switching stage provided with at least one switching device to switch a voltage of a link capacitor as an output voltage of the PFC unit to a predetermined operation frequency and a DC/DC stage driven by the switching stage; a DC/DC control unit for controlling the DC/DC unit by being connected to the switching device; and a frequency varying circuit unit for supplying the DC/DC control unit with a frequency control signal to adjust the operation frequency of the switching device according to load after detecting an output current of the link capacitor and acquiring load information.

摘要翻译： 本发明提供了一种用于服务器的电源，包括：PFC（功率因数校正）单元，用于通过连接到输入电源来满足谐波调节; DC / DC单元，其包括具有至少一个开关装置的开关级，用于将作为PFC单元的输出电压的链路电容器的电压切换到预定工作频率，以及由开关级驱动的DC / DC级; DC / DC控制单元，用于通过连接到开关装置来控制DC / DC单元; 以及变频电路单元，用于在检测到所述链路电容器的输出电流并获取负载信息之后，向所述DC / DC控制单元提供频率控制信号，以根据负载调整所述开关装置的工作频率。

公开(公告)号：US20100161744A1

公开(公告)日：2010-06-24

申请号：US12607610

申请日：2009-10-28

申请人： Jong Pil KIM ,  Sung Ik Jun

发明人： Jong Pil KIM ,  Sung Ik Jun

IPC分类号： G06F15/16

CPC分类号： H04L12/282 ,  H04L2012/2841

摘要： Provided are a system and a method for moving digital contents among heterogeneous devices. The system moves digital contents among heterogeneous devices using a remote controller and includes a movement instructing device that moves digital contents from a first device to a second device a server that is connected with the first device and the second device by a network and performs wireless communication with the movement instructing device.

摘要翻译： 提供了用于在异构设备之间移动数字内容的系统和方法。 该系统使用遥控器在异构设备之间移动数字内容，并且包括移动指示设备，其通过网络将数字内容从第一设备移动到第二设备与第一设备和第二设备连接的服务器，并执行无线通信 与运动指示装置。

公开(公告)号：US20100002471A1

公开(公告)日：2010-01-07

申请号：US12234245

申请日：2008-09-19

申请人： Tae Won HEO ,  Gun Woo MOON ,  Woo Jin LEE ,  Ki Bum PARK ,  Don Sik KIM ,  Chong Eun KIM ,  Jong Pil KIM ,  Sang Cheol BONG ,  Hak Ryong KIM ,  Dong Joong KIM

发明人： Tae Won HEO ,  Gun Woo MOON ,  Woo Jin LEE ,  Ki Bum PARK ,  Don Sik KIM ,  Chong Eun KIM ,  Jong Pil KIM ,  Sang Cheol BONG ,  Hak Ryong KIM ,  Dong Joong KIM

IPC分类号： H02M3/335

CPC分类号： H02M3/33592 ,  H02M3/337 ,  H02M2007/4818 ,  H02M2007/53878 ,  Y02B70/1441 ,  Y02B70/1475

摘要： A phase shift full bridge converter with a reduced current stress includes: a switching unit that switches an input voltage; a transformer that includes a first capacitor serially connected to, and having a primary side and a secondary side; an auxiliary circuit unit that includes a first switch, a second switch, and a second capacitor, which are connected in parallel to the secondary side of the transformer; and a rectification unit that is connected to the auxiliary circuit unit, with an output inductor being removed.

摘要翻译： 具有减小的电流应力的相移全桥转换器包括：切换输入电压的开关单元; 变压器，其包括串联连接到第一电容器并且具有初级侧和次级侧的第一电容器; 辅助电路单元，其包括与变压器的次级侧并联连接的第一开关，第二开关和第二电容器; 以及整流单元，其连接到辅助电路单元，其中输出电感器被去除。