Abstract:
A printed circuit board and a method of manufacturing the printed circuit board are disclosed. In an embodiment of the present invention, the method of manufacturing a printed circuit board can include: providing a pair of conductive layers, in which roughness of one surface of one of the pair of conductive layers is different from roughness of one surface of the other of the pair of conductive layers; and stacking the pair of the conductive layers on a dielectric layer such that one surface of one of the pair of conductive layers faces one surface of the dielectric layer and one surface of the other of the pair of conductive layers faces another surface of the dielectric layer.
Abstract:
A gate structure in a semiconductor device includes a tunnel insulation layer disposed on a substrate, a first charge trapping layer disposed on the tunnel insulation layer, a second charge trapping layer disposed on the first charge trapping layer, a dielectric layer disposed to cover the second charge trapping layer, and a conductive layer pattern disposed on the dielectric layer. The first charge trapping layer includes charge trapping sites for storing charges therein. The second charge trapping layer includes nanocrystals. The semiconductor device including the gate structure may have a sufficiently wide programming/erasing window and an improved data retention capability.
Abstract:
A printed circuit board and a method of manufacturing the printed circuit board are disclosed. In an embodiment of the present invention, the method of manufacturing a printed circuit board can include: providing a pair of conductive layers, in which roughness of one surface of one of the pair of conductive layers is different from roughness of one surface of the other of the pair of conductive layers; and stacking the pair of the conductive layers on a dielectric layer such that one surface of one of the pair of conductive layers faces one surface of the dielectric layer and one surface of the other of the pair of conductive layers faces another surface of the dielectric layer.