CMOS image sensor with drive transistor having asymmetry junction region
    3.
    发明申请
    CMOS image sensor with drive transistor having asymmetry junction region 审中-公开
    具有驱动晶体管的CMOS图像传感器具有不对称结区域

    公开(公告)号:US20080179644A1

    公开(公告)日:2008-07-31

    申请号:US12012049

    申请日:2008-01-31

    IPC分类号: H01L27/146

    摘要: An image sensor includes a photosensitive device and a drive transistor for generating an electrical signal from charge accumulated in the photosensitive device. The drive transistor includes a source region of a first conductivity type and an asymmetry junction region abutting a portion of the source region and being of a second conductivity type that is opposite of the first conductivity type. The drive transistor is biased such that the asymmetry junction region reduces an effective channel length of the drive transistor.

    摘要翻译: 图像传感器包括感光装置和驱动晶体管,用于从积累在感光装置中的电荷产生电信号。 驱动晶体管包括第一导电类型的源极区域和与源极区域的一部分相邻并且与第一导电类型相反的第二导电类型的不对称接合区域。 驱动晶体管被偏压使得不对称结区域减小驱动晶体管的有效沟道长度。

    Image sensor and method for manufacturing the same
    4.
    发明申请
    Image sensor and method for manufacturing the same 审中-公开
    图像传感器及其制造方法

    公开(公告)号:US20090215221A1

    公开(公告)日:2009-08-27

    申请号:US12379400

    申请日:2009-02-20

    IPC分类号: H01L21/336 H01L31/18

    摘要: An image sensor may include a photo diode, a transfer transistor configured to transfer a photo charge generated by the photo diode to a floating diffusion region and buried channel transistors electrically coupled to the transfer transistor, wherein each of the transistors have a buried channel. The noise of the image sensor may be reduced because a channel of the buried-channel transistors in the active pixel region may be formed apart from a defected surface of a substrate when the buried-channel transistors are turned on.

    摘要翻译: 图像传感器可以包括光电二极管,被配置为将由光电二极管产生的光电荷传送到浮动扩散区域的传输晶体管和电耦合到传输晶体管的掩埋沟道晶体管,其中每个晶体管具有掩埋沟道。 由于当埋入沟道晶体管导通时,有源像素区域中的掩埋沟道晶体管的沟道可以与衬底的缺陷表面分开形成,所以可以减小图像传感器的噪声。