摘要:
An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.
摘要:
An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.
摘要:
An image sensor includes a photosensitive device and a drive transistor for generating an electrical signal from charge accumulated in the photosensitive device. The drive transistor includes a source region of a first conductivity type and an asymmetry junction region abutting a portion of the source region and being of a second conductivity type that is opposite of the first conductivity type. The drive transistor is biased such that the asymmetry junction region reduces an effective channel length of the drive transistor.
摘要:
An image sensor may include a photo diode, a transfer transistor configured to transfer a photo charge generated by the photo diode to a floating diffusion region and buried channel transistors electrically coupled to the transfer transistor, wherein each of the transistors have a buried channel. The noise of the image sensor may be reduced because a channel of the buried-channel transistors in the active pixel region may be formed apart from a defected surface of a substrate when the buried-channel transistors are turned on.