公开(公告)号：US20070200056A1

公开(公告)日：2007-08-30

申请号：US11627744

申请日：2007-01-26

Applicant: Bum-suk Kim ,  Getman Alexander ,  Yun-ho Jang ,  Sae-young Kim ,  Jong-jin Lee ,  Yo-han Sun ,  Keun-chan Yuk

Inventor： Bum-suk Kim ,  Getman Alexander ,  Yun-ho Jang ,  Sae-young Kim ,  Jong-jin Lee ,  Yo-han Sun ,  Keun-chan Yuk

IPC: H01J3/14

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.

Abstract translation: 涂覆有具有设置在半导体衬底上的微透镜的防反射材料的图像传感器，所述微透镜对应于形成在所述半导体衬底中的光接收装置，其中所述图像传感器包括涂覆在所述微透镜的表面上的第一层，以及 第二层涂覆在第一层上，其中第二层具有比第一层更小的折射率。

公开(公告)号：US07595519B2

公开(公告)日：2009-09-29

申请号：US11682550

申请日：2007-03-06

Applicant: Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

Inventor： Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

IPC: H01L31/062

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Abstract translation: 图像传感器包括第一类型半导体层，第二类型半导体层和第一类型阱。 第一类型半导体层形成在半导体衬底上，并且包括多个像素，其接收外部光并将光电荷转换成电信号。 第二类型半导体层被提供有与第一半导体层的电位不同的漏极电压，并且第一类型阱使用漏极电压来控制电源电压（VDD）。

公开(公告)号：US20070257282A1

公开(公告)日：2007-11-08

申请号：US11672866

申请日：2007-02-08

Applicant: Yo-han Sun ,  Jong-jin Lee ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim ,  Keun-chan Yuk ,  Getman Alexander

Inventor： Yo-han Sun ,  Jong-jin Lee ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim ,  Keun-chan Yuk ,  Getman Alexander

IPC: H01L27/148 ,  H01L21/339

CPC classification number: H01L27/14601 ,  H01L27/14687

Abstract: An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.

Abstract translation: 将电源电压施加到半导体衬底的背面的图像传感器包括第一类型半导体衬底，形成在第一类型半导体衬底上的第一类型半导体层，形成在第一类型半导体层上的第二类型半导体层，以及功率 所述电压接收器相对于所述第一类型半导体衬底形成在与所述第一类型半导体层相对的所述第一类型半导体衬底的背面上，其中所述电力电压接收器从外部接收电力电压并将所述电力电压施加到所述第一类型半导体衬底。

公开(公告)号：US20070210359A1

公开(公告)日：2007-09-13

申请号：US11682550

申请日：2007-03-06

Applicant: Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

Inventor： Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

IPC: H01L31/113

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Abstract translation: 图像传感器包括第一类型半导体层，第二类型半导体层和第一类型阱。 第一类型半导体层形成在半导体衬底上，并且包括多个像素，其接收外部光并将光电荷转换成电信号。 第二类型半导体层被提供有与第一半导体层的电位不同的漏极电压，并且第一类型阱使用漏极电压来控制电源电压（VDD）。