摘要:
A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.
摘要:
A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.
摘要:
An organic light emitting display device capable of preventing outgassing from a pixel defining layer (PDL) or a planarization layer and method of manufacturing the same.
摘要:
Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.
摘要:
An organic light emitting display device capable of preventing outgassing from a pixel defining layer (PDL) or a planarization layer and method of manufacturing the same.
摘要:
An electrostatic chuck for manufacturing a flat panel display is disclosed. In one embodiment, the electrostatic chuck includes i) a base substrate, ii) an insulating layer formed on the base substrate and iii) a conductive layer formed on the insulating layer and electrically connected to a power device. The electrostatic chuck further includes a dielectric layer formed on the conductive layer and including an emboss part and a trench part surrounding the emboss part. The emboss part comprises a plurality of contact parts and at least one protrusion. The trench part includes at least one channel. The contact parts and the protrusion have different shapes. The electrostatic chuck further includes a cooling gas line extending through the base substrate, the insulating layer, the conductive layer, and the dielectric layer.
摘要:
A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
摘要:
An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要:
An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要:
A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.