公开(公告)号：US20110169066A1

公开(公告)日：2011-07-14

申请号：US12958601

申请日：2010-12-02

申请人： Joon-Seok MOON ,  Dong-Soo WOO ,  Jaerok KAHNG ,  Jinwoo LEE ,  Keeshik PARK

发明人： Joon-Seok MOON ,  Dong-Soo WOO ,  Jaerok KAHNG ,  Jinwoo LEE ,  Keeshik PARK

IPC分类号： H01L29/78 ,  H01L27/108

CPC分类号： H01L27/10876 ,  H01L29/4236

摘要： Semiconductor devices and dynamic random access memory devices including a buried gate electrode are provided, the semiconductor devices include a substrate with a gate trench, a buried gate electrode partially filling the inside of the gate trench, a capping layer pattern in the gate trench and over the buried gate electrode, source/drain regions below an upper surface of the substrate and adjacent to both sides of the buried gate electrode, and a gate insulation layer interposed between the trench and the buried gate electrode. The capping layer pattern includes a high-k material layer that directly contacts an upper surface of the buried gate electrode.

摘要翻译： 提供了包括掩埋栅电极的半导体器件和动态随机存取存储器件，半导体器件包括具有栅极沟槽的衬底，部分填充栅极沟槽内部的掩埋栅电极，栅极沟槽中的覆盖层图案 掩埋栅电极，在衬底的上表面下方并且与掩埋栅电极的两侧相邻的源极/漏极区以及介于沟槽和掩埋栅极之间的栅极绝缘层。 覆盖层图案包括直接接触掩埋栅电极的上表面的高k材料层。

公开(公告)号：US20180102254A1

公开(公告)日：2018-04-12

申请号：US15645419

申请日：2017-07-10

申请人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

发明人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11582

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/47573 ,  H01L21/67086 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath,

公开(公告)号：US20190082806A1

公开(公告)日：2019-03-21

申请号：US16087654

申请日：2017-03-24

申请人： Jinwoo LEE

发明人： Jinwoo LEE

IPC分类号： A45D1/04

摘要： A hair curler includes: a body unit having an electric circuit; a heating unit connectedly fixed to one end portion of the body unit and allowing hair to be wound around on an outer circumferential surface thereof; a rotation unit rotatably provided on one end portion of the heating unit so as to rotate in the circumferential direction of the heating unit, and having one side extendedly formed in the lengthwise direction of the heating unit so as to rotate around the circumference of the heating unit; a hair holding unit attached movably to the extendedly formed one side of the rotation unit in the lengthwise direction of the heating unit, and accommodating the hair wound around the heating unit; and moving means for moving the hair holding unit in the lengthwise direction of the heating unit, such that the hair is spirally wound around the heating unit.