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公开(公告)号：US06295228B1
公开(公告)日：2001-09-25
申请号：US09514933
申请日：2000-02-28
IPC分类号： G11C1606
CPC分类号： G11C29/028 , G11C16/04 , G11C16/10 , G11C16/30 , G11C29/50 , G11C2029/5004
摘要： A programming control circuit programs a memory cell in accordance to a programming signal value that can be varied by a test equipment. The programming control circuit comprises a signal storage device, a signal output circuit, and a verification circuit. The signal storage device stores the programming signal value. The test equipment can be coupled to the signal storage device to write the programming signal value into the signal storage device. The signal output circuit is coupled to the signal storage device to receive the programming signal value. The signal output circuit converts the programming signal value into a programming signal and outputs the programming signal to the memory cell. The verification circuit determines whether the memory cell is successfully programmed. If the memory cell is not successfully programmed, the programming control circuit increases the programming signal value.
摘要翻译： 编程控制电路根据可由测试设备改变的编程信号值对存储器单元进行编程。 编程控制电路包括信号存储装置，信号输出电路和验证电路。 信号存储装置存储编程信号值。 测试设备可以耦合到信号存储设备，以将编程信号值写入信号存储设备。 信号输出电路耦合到信号存储装置以接收编程信号值。 信号输出电路将编程信号值转换为编程信号，并将编程信号输出到存储单元。 验证电路确定存储器单元是否被成功编程。 如果存储单元未成功编程，编程控制电路会增加编程信号值。
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公开(公告)号：US06304487B1
公开(公告)日：2001-10-16
申请号：US09514404
申请日：2000-02-28
IPC分类号： G11C1606
CPC分类号： G11C16/12 , G11C16/10 , G11C16/3436
摘要： A voltage control circuit that programs or erases memory cells comprises an internal voltage value store, a register device selectively coupled to an external voltage value source or the internal voltage value store to receive a voltage value, a voltage output circuit coupled to the register device to receive the voltage value and to output a corresponding voltage to the memory cells, and a verify circuit determining the time to successfully program or erase the memory cells. The register device allows the memory cells to be programmed or erased with voltage values designated by the external voltage value source to determine programming and erasing characteristics of the memory cells. Voltage values producing acceptable programming and erasing characteristics are saved in the internal voltage value store.
摘要翻译： 编程或擦除存储器单元的电压控制电路包括内部电压值存储器，选择性地耦合到外部电压值源的寄存器器件或用于接收电压值的内部电压值存储器，耦合到寄存器器件的电压输出电路， 接收电压值并将相应的电压输出到存储器单元，以及确认电路确定成功编程或擦除存储单元的时间。 寄存器件允许用由外部电压值源指定的电压值对存储器单元进行编程或擦除，以确定存储器单元的编程和擦除特性。 产生可接受的编程和擦除特性的电压值被保存在内部电压值存储器中。
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公开(公告)号：US06246611B1
公开(公告)日：2001-06-12
申请号：US09514560
申请日：2000-02-28
IPC分类号： G11C1600
CPC分类号： G11C16/3445 , G11C16/16 , G11C16/344
摘要： An erase control circuit erases a memory cell in accordance to an erase signal value that can be varied by a test equipment. The erase control circuit comprises a signal storage device, a signal output circuit, and a verification circuit. The signal storage device stores the erase signal value. A test equipment can be coupled to the signal storage device to write the programming signal value into the signal storage device. The signal output circuit is coupled to the signal storage device to receive the erase signal value. The signal output circuit converts the erase signal value into an erase signal and outputs the erase signal to the memory cell. The verification circuit determines whether the memory cell is successfully erased. If the memory cell is not successfully erased, the erase control circuit increases the erase signal value.
摘要翻译： 擦除控制电路根据可由测试设备改变的擦除信号值来擦除存储单元。 擦除控制电路包括信号存储装置，信号输出电路和验证电路。 信号存储装置存储擦除信号值。 测试设备可以耦合到信号存储设备，以将编程信号值写入信号存储设备。 信号输出电路耦合到信号存储装置以接收擦除信号值。 信号输出电路将擦除信号值转换成擦除信号，并将该擦除信号输出到存储单元。 验证电路确定存储器单元是否被成功擦除。 如果存储单元未成功擦除，则擦除控制电路增加擦除信号值。
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