摘要:
A thermoelectric material having enhanced Seebeck coefficient is characterized by a microstructure comprising nanoscale Pb inclusions dispersed in matrix substantially composed of PbTe. The excess Pb is obtained either by adding Pb in an amount greater than the stoichiometric amount needed to form PbTe, or by adding an additive effective to getter Te so as to produce the desired excess. The method is generally applicable to enhance thermoelectric properties of compounds of Pb, Sn or Ge, and Te, Se, or S.
摘要:
A thermo-electric device has a seat side and a cabin side for delivering heating and cooling air from a HVAC module to seat passages of a vehicle seat assembly. A selector is included for setting a desired or control temperature Tcontrol of the seat assembly. A comparator is included for determining the temperature difference ΔT between the actual temperature of the seat assembly Tseat and the desired or selected temperature Tcontrol. A controller simultaneously adjusts a proportioning valve and adjusts the electrical current to the thermoelectric device in relationship to one another in response to the temperature difference ΔT.
摘要:
A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.
摘要:
A thermoelectric device is disposed in series with the HVAC module for heating and cooling air Ta from the HVAC module for delivery to seat passages of a seat assembly. The thermoelectric device includes a thermoelectric module, a heat exchanger having cold and hot sides, ductwork, a divider that sends variable air flow to the cold or hot sides of the thermoelectric module, and thermal insulation between the cold and hot sides downstream of the heat exchanger. The fan of the HVAC module is the sole motivation for moving the conditioned air Ta originating from the central HVAC module through the thermoelectric device and to the seat assembly.
摘要:
A thermo-electric device is disposed in series with the HVAC module for heating and cooling air Ta from the HVAC module for delivery to seat passages of a seat assembly and/or to a thermal container. The thermoelectric device includes a thermoelectric module, a heat exchanger having cold and hot sides, ductwork, a divider that sends variable air flow to the cold or hot sides of the thermoelectric module, and thermal insulation between the cold and hot sides downstream of the heat exchanger. The fan of the HVAC module is the sole motivation for moving the conditioned air Ta originating from the central HVAC module through the thermoelectric device and to the seat assembly and/or to a thermal container.
摘要:
For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.
摘要:
A sensor assembly for measuring force along an axis (F) comprises an inductance coil extending around the axis (F) for establishing a loop of magnetic flux looping axially through the coil and extending around the axis (F) to define a donut shaped ring of magnetic flux surrounding the axis (F). A core of magnetostrictive material provides a primary path for the magnetic flux in a first portion of the loop of magnetic flux and a magnetic carrier provides a return path for magnetic flux in a second portion of the loop of magnetic flux as the magnetic flux circles the coil through the core and the carrier. A first interface extends radially between the core and the carrier whereby the core and the carrier are urged together at the interface in response to a force applied parallel to the axis (F). Various embodiments or combinations of the core and carrier are illustrated in FIGS. 3–7.
摘要:
The subject invention provides an assembly for measuring movement of and a torque applied to a shaft extending between first and second ends and being hollow, specifically for measuring rotation and twisting of the shaft. A permanent magnet is disposed within the shaft for producing a parallel magnetic field emanating radially from the shaft. A sensor mechanism is positioned adjacent the shaft to detect the magnetic flux produced in response to the shaft being moved. The sensor mechanism includes a magnetostrictive (MR) material disposed annularly about the shaft and extends between first and second edges. A flux collector extends beyond the first and second edges of the magnetostrictive material to direct the magnetic flux through a Hall sensor to detect an axial component of the magnetic flux in response to twisting. A positional ring extends annularly around and spaced from the shaft and a positional sensor is disposed between the positional ring and the shaft for measuring a radial component of the magnetic flux in response to rotating.
摘要:
A magnetostrictive strain sensor (10) includes a magnetostrictive core (12) comprising a magnetostrictive material, such as a nickel-iron alloy, able to conduct a magnetic flux and whose permeability is alterable by application of a strain. A conductive coil (14) is proximate the magnetostrictive core (12) to generate the magnetic flux when electrically excited. A shell (16) surrounds the conductive coil (14) and the magnetostrictive core (12) for providing a conductive return path for the magnetic flux. An excitation source (18) is electrically connected to the conductive coil (14) for electrically exciting the conductive coil (14) with an alternating current having a constant magnitude. An in-phase voltage circuit (22) is electrically connected across the conductive coil (14). The in-phase voltage circuit (22) senses an in-phase voltage that is in-phase with the alternating current. The in-phase voltage varies correspondingly to the strain subjected to the magnetostrictive core (12). A processor (24) is operatively connected to the in-phase voltage circuit (22) to determine the strain applied to said magnetostrictive core (12) by comparing the in-phase voltage to a predetermined relationship between strain and in-phase voltage.
摘要:
A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.