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1.发明授权Thermoelectric materials comprising nanoscale inclusions to enhance seebeck coefficient 失效包含纳米尺度夹杂物的热电材料增强了贝贝克系数公开(公告)号：US07365265B2
公开(公告)日：2008-04-29
申请号：US11152664
申请日：2005-06-14
CPC分类号： H01L35/16 , Y10S977/779 , Y10S977/948
摘要： A thermoelectric material having enhanced Seebeck coefficient is characterized by a microstructure comprising nanoscale Pb inclusions dispersed in matrix substantially composed of PbTe. The excess Pb is obtained either by adding Pb in an amount greater than the stoichiometric amount needed to form PbTe, or by adding an additive effective to getter Te so as to produce the desired excess. The method is generally applicable to enhance thermoelectric properties of compounds of Pb, Sn or Ge, and Te, Se, or S.
摘要翻译： 具有增强的塞贝克系数的热电材料的特征在于包含分散在基本上由PbTe组成的基质中的纳米级Pb夹杂物的微结构。 通过添加大于形成PbTe所需的化学计量的量的Pb或通过添加对吸附剂Te有效的添加剂以产生所需的过量而获得过量的Pb。 该方法通常适用于提高Pb，Sn或Ge，Te，Se或S的化合物的热电性能。
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2.发明授权Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet 失效位置传感器包括在永久磁铁上的薄膜砷化铟磁阻
公开(公告)号：US4939456A
公开(公告)日：1990-07-03
申请号：US426249
申请日：1989-10-25
CPC分类号： G01D5/147
摘要： For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.
摘要翻译： 为了提高灵敏度，改进的位置传感器包括一个磁路，其中固定部分包括永磁体，其宽度最好是传感器的激励器部分的齿距的1.5倍，并且靠近激励器的磁体面包括铁磁薄层 其上以诸如磁电阻器的窄磁感应元件为中心的材料。 感测元件具有通常小于齿宽度的宽度。 感测元件包括单晶半导体材料的薄膜，优选仅具有适度的体迁移率和较大的带隙，例如砷化铟。 电流载流子沿着表面积累层中的薄膜的长度流动，有效地提供所述半导体材料的迁移率和导电性的明显增加，并且磁敏感性和温度不敏感性的实际增加。 磁通密度通常通过适当的磁体厚度或磁体材料的选择来施加，而不需要助焊剂引导。
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公开(公告)号：US20090107248A1
公开(公告)日：2009-04-30
申请号：US11977306
申请日：2007-10-24
IPC分类号： G01L1/00
CPC分类号： G01L9/16
摘要： In one embodiment, a sensor assembly has a sensor housing forming a fluid chamber having a surface defining a normal axis. A magnetostrictive (MS) core that defines a central longitudinal axis is subjected to stress induced by pressurized fluid in the chamber. An excitation coil is coupled to the core to induce a magnetic flux therein. The central longitudinal axis of the core is coaxial with the axis normal to the fluid chamber surface.
摘要翻译： 在一个实施例中，传感器组件具有形成具有限定法向轴线的表面的流体室的传感器外壳。 限定中心纵向轴线的磁致伸缩（MS）芯受到腔内由加压流体引起的应力。 激励线圈耦合到芯以在其中引起磁通量。 芯的中心纵向轴线与垂直于流体室表面的轴线同轴。
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4.发明申请SYSTEMS AND METHODS FOR DETERMINING A CONCENTRATION OF UREA IN AN AQUEOUS SOLUTION 审中-公开用于确定水溶液浓度浓度的系统和方法公开(公告)号：US20100084558A1
公开(公告)日：2010-04-08
申请号：US12244457
申请日：2008-10-02
CPC分类号： G01N21/3577 , F01N3/2066 , F01N2560/12 , F01N2610/02 , F01N2900/1814 , G01N21/552
摘要： System and methods for determining a concentration of urea in an aqueous solution disposed in a container are provided. The system includes an infrared light source and an infrared light detector. The system further includes a window disposed proximate to an aperture of the container, such that the infrared light at a first light intensity level from the infrared light source passes through a first portion of the window toward the aqueous solution. A portion of the infrared light is absorbed by the aqueous solution, and a second portion of the infrared light is reflected from the aqueous solution and through a second portion of the window. The infrared light detector system generates a first signal indicative of a second light intensity level based on the second portion of infrared light. The system further includes a microprocessor that determines the second light intensity level based on the first signal, and further determines a urea concentration based on the first and second light intensity levels.
摘要翻译： 提供了用于确定设置在容器中的水溶液中的尿素浓度的系统和方法。 该系统包括红外光源和红外光检测器。 该系统还包括靠近容器的孔设置的窗口，使得来自红外光源的第一光强度级的红外光通过窗口的第一部分朝向水溶液。 红外光的一部分被水溶液吸收，红外光的第二部分从水溶液中反射并通过窗口的第二部分反射。 红外光检测器系统基于红外光的第二部分生成表示第二光强度的第一信号。 该系统还包括微处理器，其基于第一信号确定第二光强度水平，并且还基于第一和第二光强度水平确定尿素浓度。
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公开(公告)号：US07700044B2
公开(公告)日：2010-04-20
申请号：US11033677
申请日：2005-01-12
IPC分类号： G01N30/96
CPC分类号： B82Y30/00 , B60K28/06 , G01N1/2214 , G01N1/405 , G01N21/0332 , G01N21/05 , G01N21/3504 , G01N33/4972 , G01N2001/2276 , G01N2021/158 , G01N2201/12707 , G01N2201/12792
摘要： A chemical vapor sensor is provided that passively measures a chemical species of interest with high sensitivity and chemical specificity. In an aspect, ethanol vapor in a vehicle cabin is measured, and sufficient sensitivity is provided to passively detect a motor vehicle driver that exceeds a legal limit of blood alcohol concentration (BAC), for use with vehicle safety systems. The sensor can be situated in an inconspicuous vehicle cabin location and operate independently without requiring active involvement by a driver. A vapor concentrator is utilized to amplify a sampled vapor concentration to a detectible level for use with an infrared (IR) detector. In an aspect, in comparison to conventional chemical sensors, the sensitivity of detection of ethanol vapor is increased by a factor of about 1,000. Further, a single channel of infrared detection is utilized avoiding spurious infrared absorption and making the chemical vapor sensor less costly to implement.
摘要翻译： 提供一种化学气相传感器，被动地测量感兴趣的化学物质，具有高灵敏度和化学特异性。 在一方面，测量车厢内的乙醇蒸气，并且提供足够的灵敏度以被动地检测超过合法限制的血液酒精浓度（BAC）的汽车驾驶员，以用于车辆安全系统。 传感器可以位于不显眼的车厢位置，并且独立操作，而不需要驾驶员的积极参与。 采用蒸汽浓缩器将取样的蒸汽浓度放大到可检测的水平以与红外（IR）检测器一起使用。 在一方面，与传统的化学传感器相比，乙醇蒸气的检测灵敏度提高了大约1,000倍。 此外，利用单个红外线检测通道可避免杂散的红外线吸收，并且使化学气相传感器的执行成本更低。
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公开(公告)号：US20090107260A1
公开(公告)日：2009-04-30
申请号：US11977254
申请日：2007-10-24
IPC分类号： G01L3/10
CPC分类号： G01L9/16
摘要： In one embodiment, a sensor assembly has a magnetostrictive (MS) element and a sensor housing defining at least one active wall. A sensor channel is disposed on a first side of the active wall, with the MS element being disposed in the sensor channel and closely received therein. A fluid is on a second side of the active wall, and the active wall is the wall through which stress from pressure of the fluid causes stress on the MS element. The sensor channel defines an axis parallel to the active wall, and the MS element is positioned adjacent the active wall by sliding the MS element into an end of the sensor channel in a direction parallel to the active wall.
摘要翻译： 在一个实施例中，传感器组件具有限定至少一个活动壁的磁致伸缩（MS）元件和传感器外壳。 传感器通道设置在有源壁的第一侧上，MS元件设置在传感器通道中并且紧密地接收在其中。 流体位于活性壁的第二侧上，活性壁是通过流体压力产生的应力引起MS元件上的应力的壁。 传感器通道限定平行于活动壁的轴，并且MS元件通过沿着平行于活动壁的方向将MS元件滑动到传感器通道的端部中而邻近有源壁定位。
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7.发明申请Means and method of sensing pressure using magnetostrictive electrical condutors 审中-公开使用磁致伸缩电气换能器检测压力的方法和方法公开(公告)号：US20090107249A1
公开(公告)日：2009-04-30
申请号：US11977322
申请日：2007-10-24
IPC分类号： G01L1/00
CPC分类号： G01L9/16
摘要： In one embodiment, a sensor assembly has a sensor housing forming a fluid chamber and a magnetostrictive wire that undergoes stress induced by fluid in the chamber. The wire defines opposed ends, each being associated with a respective terminal. Respective hermetic seals penetrate the housing and are coupled to the respective terminals.
摘要翻译： 在一个实施例中，传感器组件具有形成流体室的传感器壳体和经受腔室中的流体引起的应力的磁致伸缩导线。 线定义相对的端部，每个端子与相应的端子相关联。 各个气密密封件穿透壳体并联接到相应的端子。
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8.发明申请Magnetostrictive pressure sensor with an integrated sensing and sealing part 审中-公开磁致伸缩压力传感器具有集成的感应和密封部分公开(公告)号：US20090107247A1
公开(公告)日：2009-04-30
申请号：US11977252
申请日：2007-10-24
IPC分类号： G01B7/00
CPC分类号： G01L9/007
摘要： In one embodiment a sensor assembly has a magnetostrictive (MR) element in a sensor housing. The MR element has a sensing part engaged with a wire coil and a frusto-conical sealing part juxtaposed with a fluid the pressure of which is to be sensed.
摘要翻译： 在一个实施例中，传感器组件在传感器壳体中具有磁致伸缩（MR）元件。 MR元件具有与线圈接合的感测部分和与要被感测的压力的流体并置的截头圆锥形密封部分。
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公开(公告)号：US07232013B2
公开(公告)日：2007-06-19
申请号：US10834486
申请日：2004-04-29
IPC分类号： F16D66/02
CPC分类号： F16D66/00 , F16D2066/005
摘要： A brake system including a brake pad shaped and located to apply pressure to a brake rotor and an actuator shaped and located to apply pressure to the brake pad to cause the brake pad to apply pressure to the rotor. The system further includes a sensor material which varies in resistance when the actuator applies pressure to the brake pad, wherein the sensor material include an electrically insulating material with electrically conductive particles distributed therein. The system further includes a controller operatively coupled to the sensor material to detect a change in resistance of the sensor material.
摘要翻译： 一种制动系统，包括形状和位置以对制动转子施加压力的制动衬块和被定位成对制动衬块施加压力以致制动衬块向转子施加压力的致动器。 该系统还包括当致动器对制动衬块施加压力时电阻变化的传感器材料，其中传感器材料包括其中分布有导电颗粒的电绝缘材料。 该系统还包括可操作地耦合到传感器材料的控制器，以检测传感器材料的电阻变化。
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公开(公告)号：US5314547A
公开(公告)日：1994-05-24
申请号：US951995
申请日：1992-09-28
IPC分类号： H01L29/207 , H01L29/36 , H01L43/08 , H01L29/00
CPC分类号： H01L29/207 , H01L29/365 , H01L43/08
摘要： A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane. The electron density establishes an average extrinsic electron density within the combined undoped and doped layers of the Group III-V compound. The density of erbium in the doped layers is preferably sufficient to yield an average extrinsic electron density of between about 1.times.10.sup.16 cm.sup.-3 and about 1.times.10.sup.18 cm.sup.-3, while also achieving a carrier mobility greater than about 30,000 cm.sup.-2 /V-s at room temperature.
摘要翻译： 提供一种半导体膜，其特征在于具有高载流子迁移率和载流子密度。 半导体膜掺杂有稀土元素铒，以提高其温度稳定性。 因此，半导体膜特别适用于诸如霍尔效应传感器或磁敏电阻器的磁场感测装置。 半导体膜由窄间隙III-V族化合物形成，优选锑化锑，其与铒掺杂，以提供足以提高温度稳定性的电子密度。 特别地，半导体膜的特征在于使用平板掺杂技术产生的尼尼结构。 板状掺杂工艺包括III-V族化合物的掺杂层和未掺杂层的交替层的生长，其中掺杂层基本上比未掺杂层更薄，并且优选地薄至一个原子平面。 电子密度在III-V族化合物的组合未掺杂和掺杂层中建立了平均的外在电子密度。 掺杂层中铒的密度优选足以产生约1×10 16 cm -3至约1×10 18 cm -3之间的平均非本征电子密度，同时在室温下也达到大于约30,000cm-2 / Vs的载流子迁移率 。
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