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    Tone inversion of self-assembled self-aligned structures
    3.
    发明授权
    Tone inversion of self-assembled self-aligned structures 有权

    公开(公告)号：US08771929B2

    公开(公告)日：2014-07-08

    申请号：US13587088

    申请日：2012-08-16

    申请人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    发明人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

    摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

    TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES
    4.
    发明申请
    TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES 有权

    公开(公告)号：US20140148012A1

    公开(公告)日：2014-05-29

    申请号：US13587088

    申请日：2012-08-16

    申请人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    发明人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    IPC分类号： H01L21/033

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

    摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

    Tone inversion of self-assembled self-aligned structures
    5.
    发明授权
    Tone inversion of self-assembled self-aligned structures 有权
    自组装自对准结构的音调反演

    公开(公告)号：US08921030B2

    公开(公告)日：2014-12-30

    申请号：US13603869

    申请日：2012-09-05

    申请人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    发明人： Michael A. Guillorn ,  Steven J. Holmes ,  Chi-Chun Liu ,  Hiroyuki Miyazoe ,  Hsinyu Tsai

    IPC分类号： G03F7/00

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

    摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

    摘要翻译： 在衬底上设置有机平面化层（OPL）和模板层的叠层。 将模板层图案化以引起随后沉积的共聚物层的自组装。 共聚物层被沉积并退火以形成相分离的共聚物嵌段。 通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。 原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。 在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。 图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。