公开(公告)号：US07617836B2

公开(公告)日：2009-11-17

申请号：US11377679

申请日：2006-03-17

申请人： Ju-Won Kim ,  Doo-Keun An ,  Kwang-Il Choi ,  Pyong-Soon Jung ,  Yong-Nam Choi ,  Jeong-Yong Bae

发明人： Ju-Won Kim ,  Doo-Keun An ,  Kwang-Il Choi ,  Pyong-Soon Jung ,  Yong-Nam Choi ,  Jeong-Yong Bae

IPC分类号： G05D11/08

CPC分类号： C02F1/008 ,  C01B5/00 ,  C02F1/685 ,  C02F2103/02 ,  C02F2103/026 ,  Y10T137/0324 ,  Y10T137/0329 ,  Y10T137/2509

摘要： A supply system for supplying a functional water to a process unit which treats a substrate using the functional water is provided. In the system, the functional water generated in the functional water generator is supplied to a distributor through a functional water supply pipe. Thereafter, the functional water is supplied to the process unit while the process unit performs a process, and the functional water is returned to the functional water generator through a functional water returning pipe while the process unit does not perform a process. A buffer tank is installed in the functional water supply pipe and the concentration of the functional water is measured in a circulation line connected with the buffer tank. When the measured concentration of the functional water goes out of a set concentration range, the functional water is returned to the functional water generator through functional water returning pipe.

摘要翻译： 提供了一种用于向功能水处理基板的处理单元供给功能水的供给系统。 在该系统中，功能水发生器中产生的功能水通过功能性供水管道供给到分配器。 此后，在处理单元执行处理时，将功能水供给处理单元，并且在处理单元不执行处理时，功能水通过功能回水管返回到功能水生成器。 在功能性供水管中安装缓冲罐，在与缓冲罐连接的循环管线中测量功能水的浓度。 当功能水的测量浓度超出设定浓度范围时，功能水通过功能回水管返回到功能水发生器。

公开(公告)号：US20060207777A1

公开(公告)日：2006-09-21

申请号：US11377679

申请日：2006-03-17

申请人： Ju-Won Kim ,  Doo-Keun An ,  Kwang-II Choi ,  Pyong-Soon Jung ,  Yong-Nam Choi ,  Jeong-Yong Bae

发明人： Ju-Won Kim ,  Doo-Keun An ,  Kwang-II Choi ,  Pyong-Soon Jung ,  Yong-Nam Choi ,  Jeong-Yong Bae

IPC分类号： B25D15/00

CPC分类号： C02F1/008 ,  C01B5/00 ,  C02F1/685 ,  C02F2103/02 ,  C02F2103/026 ,  Y10T137/0324 ,  Y10T137/0329 ,  Y10T137/2509

摘要： A supply system for supplying a functional water to a process unit which treats a substrate using the functional water is provided. In the system, the functional water generated in the functional water generator is supplied to a distributor through a functional water supply pipe. Thereafter, the functional water is supplied to the process unit while the process unit performs a process, and the functional water is returned to the functional water generator through a functional water returning pipe while the process unit does not perform a process. A buffer tank is installed in the functional water supply pipe and the concentration of the functional water is measured in a circulation line connected with the buffer tank. When the measured concentration of the functional water goes out of a set concentration range, the functional water is returned to the functional water generator through functional water returning pipe.

公开(公告)号：US07323080B2

公开(公告)日：2008-01-29

申请号：US11084034

申请日：2005-03-21

申请人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

发明人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

IPC分类号： C23F1/00

CPC分类号： H01L21/67086 ,  H01L21/67051 ,  H01L21/67069

摘要： The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the wafer. The top edge and bottom of the wafer is etched by a wet etch, and a boundary of the non-etch portion and the edge of the wafer is etched by a dry etch.

摘要翻译： 本发明涉及用于蚀刻晶片的顶部边缘和底部的装置。 该装置包括用于支撑晶片的基板支撑部分和用于防止蚀刻流体流入晶片的非蚀刻部分的可移动保护部分。 通过湿式蚀刻蚀刻晶片的顶部边缘和底部，通过干蚀刻蚀刻非蚀刻部分和晶片边缘的边界。

公开(公告)号：US20050247667A1

公开(公告)日：2005-11-10

申请号：US11084034

申请日：2005-03-21

申请人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

发明人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/67051 ,  H01L21/67069

摘要： The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the wafer. The top edge and bottom of the wafer is etched by a wet etch, and a boundary of the non-etch portion and the edge of the wafer is etched by a dry etch.

摘要翻译： 本发明涉及用于蚀刻晶片的顶部边缘和底部的装置。 该装置包括用于支撑晶片的基板支撑部分和用于防止蚀刻流体流入晶片的非蚀刻部分的可移动保护部分。 通过湿式蚀刻蚀刻晶片的顶部边缘和底部，通过干蚀刻蚀刻非蚀刻部分和晶片边缘的边界。