公开(公告)号：US20070117407A1

公开(公告)日：2007-05-24

申请号：US11603750

申请日：2006-11-22

申请人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Lee ,  Hsiang Chang ,  Yan Wu ,  Kun Lee ,  Yi Lee

发明人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Lee ,  Hsiang Chang ,  Yan Wu ,  Kun Lee ,  Yi Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10−6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

摘要翻译： 本发明提供一种用于形成MOS（金属氧化物半导体）晶体管的衬底的方法，包括以下步骤：（A）在压力低于1×10 -6 Torr的减压环境中， 提供了用于完成表面重建的基底和固态金属氧化物源，其中固态金属氧化物源选自下列物质：氧化铪，氧化铝，氧化钪，氧化钇，氧化钛， 镓钆氧化物和稀土元素的金属氧化物; 和（B）使固态金属氧化物源汽化以使固态金属氧化物源成为金属氧化物分子束，并且在实现第一金属氧化物膜的无定形状态所需的工作衬底温度 沉积在具有非晶状态的基底上，从而进一步制造用于MOS晶体管的衬底。

公开(公告)号：US07678633B2

公开(公告)日：2010-03-16

申请号：US11603750

申请日：2006-11-22

申请人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Chin Lee ,  Hsiang Pi Chang ,  Yan Dar Wu ,  Kun Yu Lee ,  Yi Jiun Lee

发明人： Juei-Nai Kwo ,  Ming-Hwei Hong ,  Wei Chin Lee ,  Hsiang Pi Chang ,  Yan Dar Wu ,  Kun Yu Lee ,  Yi Jiun Lee

IPC分类号： H01L29/72

CPC分类号： H01L21/28194 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02269 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10−6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

摘要翻译： 本发明提供一种用于形成MOS（金属氧化物半导体）晶体管的衬底的方法，包括以下步骤：（A）在压力低于1×10-6乇的减压环境中，用于实现表面 提供重构和固态金属氧化物源，其中固态金属氧化物源选自下列物质：氧化铪，氧化铝，氧化钪，氧化钇，氧化钛，镓钆氧化物和金属 稀土元素氧化物; 和（B）使固态金属氧化物源汽化以使固态金属氧化物源成为金属氧化物分子束，并且在实现第一金属氧化物膜的无定形状态所需的工作衬底温度 沉积在具有非晶状态的基底上，从而进一步制造用于MOS晶体管的衬底。