Method for forming substrates for MOS transistor components and its products
    1.
    发明申请
    Method for forming substrates for MOS transistor components and its products 有权
    用于形成用于MOS晶体管组件及其产品的衬底的方法

    公开(公告)号:US20070117407A1

    公开(公告)日:2007-05-24

    申请号:US11603750

    申请日:2006-11-22

    IPC分类号: H01L21/31

    摘要: The present invention provides a method for forming substrates for MOS (metal oxide semiconductor) transistor, comprising the following steps: (A) In a reduced-pressure environment having a pressure lower than 1×10−6 Torr, a base for accomplishing the surface reconstruction and a solid-state metal oxide source is provided, wherein the solid-state metal oxide source is chosen from the group consisting of the following: hafnium oxide, aluminum oxide, scandium oxide, yttrium oxide, titanium oxide, gallium gadolinium oxide and metal oxides of rare earth elements; and (B) vaporize the solid-state metal oxide source in order to make the solid-state metal oxide source become a metal oxide molecular beam and, in a working substrate temperature that is required to achieve an amorphous state of a first metal oxide film, deposit on the base having an amorphous state so as to further fabricate a substrate for MOS transistors.

    摘要翻译: 本发明提供一种用于形成MOS(金属氧化物半导体)晶体管的衬底的方法,包括以下步骤:(A)在压力低于1×10 -6 Torr的减压环境中, 提供了用于完成表面重建的基底和固态金属氧化物源,其中固态金属氧化物源选自下列物质:氧化铪,氧化铝,氧化钪,氧化钇,氧化钛, 镓钆氧化物和稀土元素的金属氧化物; 和(B)使固态金属氧化物源汽化以使固态金属氧化物源成为金属氧化物分子束,并且在实现第一金属氧化物膜的无定形状态所需的工作衬底温度 沉积在具有非晶状态的基底上,从而进一步制造用于MOS晶体管的衬底。

    Writer shields with modified shapes for reduced flux shunting
    7.
    发明授权
    Writer shields with modified shapes for reduced flux shunting 有权
    作者盾牌具有改进的形状,用于减少通量分流

    公开(公告)号:US08542461B2

    公开(公告)日:2013-09-24

    申请号:US12806803

    申请日:2010-08-20

    IPC分类号: G11B5/147 G11B5/187

    摘要: A perpendicular magnetic recording (PMR) head is fabricated with a configuration of leading edge shields and trailing edge shields that reduce the leakage of flux between the main pole and the shields. The reduction of leakage is achieved by eliminating the sharp 90° corner between the backside surfaces of the shields and the surfaces adjacent to the main pole. In one embodiment the corner is replaced by two successive acute angles, in another embodiment it is replaced by a rounded surface. In a final embodiment, leakage between the pole and trailing edge shield is achieved by shortening the length of the write gap by forming the shield with a double taper.

    摘要翻译: 垂直磁记录(PMR)头被制造成具有前缘屏蔽和后缘屏蔽的结构,其减小主极和屏蔽之间的通量泄漏。 通过消除屏蔽的背面和与主极相邻的表面之间的尖锐的90°角来实现泄漏的减少。 在一个实施例中,角部被两个连续的锐角取代,在另一个实施例中,它被圆形表面所代替。 在最终实施例中,通过用双锥形形成屏蔽来缩短写入间隙的长度来实现极和后缘屏蔽之间的泄漏。

    Back channel communication
    9.
    发明授权
    Back channel communication 有权
    后通道通信

    公开(公告)号:US08418004B2

    公开(公告)日:2013-04-09

    申请号:US13046991

    申请日:2011-03-14

    CPC分类号: H04L12/66 H04B3/32

    摘要: Various embodiments are described for back channel communication. One embodiment is a method that comprises receiving data at customer premises equipment (CPE), determining at least one error in the received data, formatting the determined error for communication to a central office (CO), and sending the formatted error to the CO via a back channel, wherein the formatted error is sent between sync frames of a discrete multitone (DMT) superframe.

    摘要翻译: 对于后向信道通信描述了各种实施例。 一个实施例是一种方法,其包括在客户驻地设备(CPE)处接收数据,确定接收到的数据中的至少一个错误,将确定的错误格式化为中心局(CO),并将格式化的错误发送到CO经由 背信道,其中格式化的错误在离散多音(DMT)超帧的同步帧之间发送。