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    IMAGE SENSOR AND FABRICATING METHOD THEREOF
    1.
    发明申请
    IMAGE SENSOR AND FABRICATING METHOD THEREOF 有权
    图像传感器及其制作方法

    公开(公告)号：US20060057764A1

    公开(公告)日：2006-03-16

    申请号：US10711377

    申请日：2004-09-15

    申请人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Shin Lee

    发明人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Shin Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An image sensor comprising an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second surface. The image sensing device layer is formed on the first surface of the SOI layer. The optical device array is formed on the second surface of the SOI layer. The substrate is disposed above the second surface of the SOI layer and the optical device array is disposed between the substrate and the SOI layer. An incident light coming from the outside environment, passes through the optical device array and the SOI layer, and is received by sensing devices formed in the image sensing device layer. In this manner, the probability of absorption or reflection of the incident light is reduced. Therefore, the sensing performance and the yield of the image sensor of the present invention is improved.

    摘要翻译： 提供了包括图像感测装置层，绝缘体上硅（SOI）层，光学装置阵列和基板的图像传感器。 SOI层具有第一表面和第二表面。 图像感测装置层形成在SOI层的第一表面上。 光学器件阵列形成在SOI层的第二表面上。 衬底设置在SOI层的第二表面上方，并且光学器件阵列设置在衬底和SOI层之间。 来自外部环境的入射光通过光学器件阵列和SOI层，并且由形成在图像感测器件层中的感测器件接收。 以这种方式，入射光的吸收或反射的概率降低。 因此，提高了本发明的图像传感器的感测性能和产量。

    Image sensor and fabricating method thereof
    2.
    发明授权
    Image sensor and fabricating method thereof 有权
    图像传感器及其制造方法

    公开(公告)号：US07060592B2

    公开(公告)日：2006-06-13

    申请号：US10711377

    申请日：2004-09-15

    申请人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Shin Lee

    发明人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Shin Lee

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An image sensor comprising an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second surface. The image sensing device layer is formed on the first surface of the SOI layer. The optical device array is formed on the second surface of the SOI layer. The substrate is disposed above the second surface of the SOI layer and the optical device array is disposed between the substrate and the SOI layer. An incident light coming from the outside environment, passes through the optical device array and the SOI layer, and is received by sensing devices formed in the image sensing device layer. In this manner, the probability of absorption or reflection of the incident light is reduced. Therefore, the sensing performance and the yield of the image sensor of the present invention is improved.

    摘要翻译： 提供了包括图像感测装置层，绝缘体上硅（SOI）层，光学装置阵列和基板的图像传感器。 SOI层具有第一表面和第二表面。 图像感测装置层形成在SOI层的第一表面上。 光学器件阵列形成在SOI层的第二表面上。 衬底设置在SOI层的第二表面上方，并且光学器件阵列设置在衬底和SOI层之间。 来自外部环境的入射光通过光学器件阵列和SOI层，并且由形成在图像感测器件层中的感测器件接收。 以这种方式，入射光的吸收或反射的概率降低。 因此，提高了本发明的图像传感器的感测性能和产量。

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 审中-公开
    图像传感器

    公开(公告)号：US20060180860A1

    公开(公告)日：2006-08-17

    申请号：US11308330

    申请日：2006-03-16

    申请人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Hsing Lee

    发明人： Jui-Hsiang Pan ,  Cheng-Kuang Sun ,  Kuang-Chih Cheng ,  Kuang-Hsing Lee

    IPC分类号： H01L27/12

    CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An image sensor including an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second surface. The image sensing device layer is formed on the first surface of the SOI layer. The optical device array is formed on the second surface of the SOI layer. The substrate is disposed above the second surface of the SOI layer; the optical device array is disposed between the substrate and the SOI layer. An incident light coming from the outside environment, passes through the optical device array and the SOI layer, and is received by sensing devices formed in the image sensing device layer. In this manner, the probability of absorption or reflection of the incident light is reduced. Therefore, the sensing performance and the yield of the image sensor of the present invention is improved.

    摘要翻译： 提供了包括图像感测装置层，绝缘体上硅层（SOI）层，光学装置阵列和基板的图像传感器。 SOI层具有第一表面和第二表面。 图像感测装置层形成在SOI层的第一表面上。 光学器件阵列形成在SOI层的第二表面上。 衬底设置在SOI层的第二表面上方; 光学器件阵列设置在衬底和SOI层之间。 来自外部环境的入射光通过光学器件阵列和SOI层，并且由形成在图像感测器件层中的感测器件接收。 以这种方式，入射光的吸收或反射的概率降低。 因此，提高了本发明的图像传感器的感测性能和产量。