公开(公告)号：US20110174441A1

公开(公告)日：2011-07-21

申请号：US13075557

申请日：2011-03-30

申请人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。