公开(公告)号：US20130342965A1

公开(公告)日：2013-12-26

申请号：US14003332

申请日：2012-03-08

申请人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

发明人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

IPC分类号： H01G9/048

CPC分类号： H01G9/048 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B32/168 ,  C01B32/176 ,  C01B2202/02 ,  C01B2202/22 ,  C01B2202/34 ,  C01B2202/36 ,  H01G11/36 ,  Y02E60/13

摘要： A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.

摘要翻译： 可以控制碳纳米结构的几何形状和电气特性。 根据本发明的用于处理碳纳米结构的方法包括以下步骤：制备碳纳米结构（例如碳纳米管）（CNT制备步骤）; 并在使碳纳米管振动的同时将碳纳米管暴露于能量束（例如电子束）（曝光步骤）。 这有助于碳纳米管的长度和电特性的改变。

公开(公告)号：US09305711B2

公开(公告)日：2016-04-05

申请号：US14003332

申请日：2012-03-08

申请人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

发明人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

IPC分类号： H01G9/048 ,  H01G11/36 ,  C01B31/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01G9/048 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B32/168 ,  C01B32/176 ,  C01B2202/02 ,  C01B2202/22 ,  C01B2202/34 ,  C01B2202/36 ,  H01G11/36 ,  Y02E60/13

摘要： A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.

摘要翻译： 可以控制碳纳米结构的几何形状和电气特性。 根据本发明的用于处理碳纳米结构的方法包括以下步骤：制备碳纳米结构（例如碳纳米管）（CNT制备步骤）; 并在使碳纳米管振动的同时将碳纳米管暴露于能量束（例如电子束）（曝光步骤）。 这有助于碳纳米管的长度和电特性的改变。

公开(公告)号：US20150221779A1

公开(公告)日：2015-08-06

申请号：US14422002

申请日：2012-08-23

申请人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

发明人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

IPC分类号： H01L29/786 ,  H01L29/10 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/78687 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78696

摘要： A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

摘要翻译： 薄膜晶体管配备有硅衬底，沟道层，源电极和漏电极。 沟道层，源电极和漏极布置在硅衬底的主表面上。 通道层由多个碳纳米壁薄膜组成，其中多个碳纳米壁薄膜在源电极和漏电极之间彼此平行地排列，每个多个碳纳米壁薄膜的一端与 源极电极和多个碳纳米壁薄膜中的每一个的另一端与漏电极接触。 绝缘膜和栅电极设置在硅衬底的背面侧。

公开(公告)号：US20140127472A1

公开(公告)日：2014-05-08

申请号：US14130321

申请日：2012-06-26

申请人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

发明人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

IPC分类号： C01B31/02

CPC分类号： C01B31/0293 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/18 ,  Y10T428/24612

摘要： A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 μm in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 μm in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 μm. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).

摘要翻译： 碳纳米壁阵列（10）设置有基底（1）和碳纳米壁（2-9）。 基板（1）由硅构成，具有突出部（11）和凹部（12）。 突出部（11）和凹部（12）在基板（1）的一个表面上的方向（DR1）上形成。 突出部（11）和凹部（12）在垂直于方向（DR1）的方向（DR2）交替地形成。 每个突出部分（11）在方向（DR2）上具有0.1-0.5μm的长度，并且每个凹部（12）在方向（DR2）上具有0.6-1.5μm的长度。 每个突出部分（11）的高度为0.3-0.6μm。 在基板（1）的突出部（11）的长度方向（即，方向（DR1））上形成有碳纳米管（2-9），所述碳纳米壁形成在突出部（11）上。

公开(公告)号：US09236488B2

公开(公告)日：2016-01-12

申请号：US14422002

申请日：2012-08-23

申请人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

发明人： Toshio Kawahara ,  Kazumasa Okamoto ,  Kazuhiko Matsumoto ,  Risa Utsunomiya ,  Teruaki Matsuba ,  Hitoshi Matsumoto

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16 ,  H01L29/10

CPC分类号： H01L29/78687 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78696

摘要： A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

摘要翻译： 薄膜晶体管配备有硅衬底，沟道层，源电极和漏电极。 沟道层，源电极和漏极布置在硅衬底的主表面上。 通道层由多个碳纳米壁薄膜组成，其中多个碳纳米壁薄膜在源电极和漏电极之间彼此平行地排列，每个多个碳纳米壁薄膜的一端与 源极电极和多个碳纳米壁薄膜中的每一个的另一端与漏电极接触。 绝缘膜和栅电极设置在硅衬底的背面侧。