Method for producing semiconductor integrated circuits and apparatus
used in such method
    1.
    发明授权
    Method for producing semiconductor integrated circuits and apparatus used in such method 失效
    用于制造半导体集成电路的方法和用于这种方法的装置

    公开(公告)号:US5397432A

    公开(公告)日:1995-03-14

    申请号:US743383

    申请日:1991-08-21

    摘要: To prevent after-corrosion of wiring or electrodes formed by patterning films of aluminum or an alloy thereof by reactive ion etching (RIE) using an etchant containing chlorine gas or its gaseous compounds, residual chlorine on the surface of the wiring or electrodes is removed by exposing it to a plasma generated in an atmosphere containing water vapor or to neutral active species extracted from the plasma. This treatment is performed either at the same time or after an ashing operation, an operation for removing a resist mask used in the aforesaid RIE by adding water vapor to an atmosphere containing oxygen. To perform the latter separate treatment, an automatic processing system is disclosed in which an after-treatment apparatus for removing residual chlorine is connected, via a second load lock chamber, to an ashing apparatus connected to a RIE apparatus by a load lock chamber which is capable of making a vacuum.

    摘要翻译: PCT No.PCT / JP91 / 00861 Sec。 371日期1991年8月21日 102(e)1991年8月21日PCT PCT 1991年6月26日PCT公布。 公开号WO92 / 00601 日期:1992年1月9日。为了防止使用含有氯气或其气体化合物的蚀刻剂通过反应离子蚀刻(RIE)将铝或其合金的图案化膜形成的布线或电极的腐蚀腐蚀, 通过将布线或电极暴露于在含有水蒸气的气氛中产生的等离子体或从等离子体提取的中性活性物质中除去布线或电极。 该处理同时进行或在灰化操作之后,通过向含氧气氛中加入水蒸汽除去在上述RIE中使用的抗蚀剂掩模的操作。 为了进行后一种单独处理,公开了一种自动处理系统,其中用于除去残留氯的后处理装置经由第二负载锁定室连接到通过负载锁定室连接到RIE装置的灰化装置,该装载锁定室是 能够真空。