公开(公告)号：US5397432A

公开(公告)日：1995-03-14

申请号：US743383

申请日：1991-08-21

申请人： Jun-ichi Konno ,  Keisuke Shinagawa ,  Toshiyuki Ishida ,  Takahiro Ito ,  Tetsuo Kondo ,  Fukashi Harada ,  Shuzo Fujimura

发明人： Jun-ichi Konno ,  Keisuke Shinagawa ,  Toshiyuki Ishida ,  Takahiro Ito ,  Tetsuo Kondo ,  Fukashi Harada ,  Shuzo Fujimura

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02071 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67173

摘要： To prevent after-corrosion of wiring or electrodes formed by patterning films of aluminum or an alloy thereof by reactive ion etching (RIE) using an etchant containing chlorine gas or its gaseous compounds, residual chlorine on the surface of the wiring or electrodes is removed by exposing it to a plasma generated in an atmosphere containing water vapor or to neutral active species extracted from the plasma. This treatment is performed either at the same time or after an ashing operation, an operation for removing a resist mask used in the aforesaid RIE by adding water vapor to an atmosphere containing oxygen. To perform the latter separate treatment, an automatic processing system is disclosed in which an after-treatment apparatus for removing residual chlorine is connected, via a second load lock chamber, to an ashing apparatus connected to a RIE apparatus by a load lock chamber which is capable of making a vacuum.

摘要翻译： PCT No.PCT / JP91 / 00861 Sec。 371日期1991年8月21日 102（e）1991年8月21日PCT PCT 1991年6月26日PCT公布。 公开号WO92 / 00601 日期：1992年1月9日。为了防止使用含有氯气或其气体化合物的蚀刻剂通过反应离子蚀刻（RIE）将铝或其合金的图案化膜形成的布线或电极的腐蚀腐蚀， 通过将布线或电极暴露于在含有水蒸气的气氛中产生的等离子体或从等离子体提取的中性活性物质中除去布线或电极。 该处理同时进行或在灰化操作之后，通过向含氧气氛中加入水蒸汽除去在上述RIE中使用的抗蚀剂掩模的操作。 为了进行后一种单独处理，公开了一种自动处理系统，其中用于除去残留氯的后处理装置经由第二负载锁定室连接到通过负载锁定室连接到RIE装置的灰化装置，该装载锁定室是 能够真空。

公开(公告)号：US5832177A

公开(公告)日：1998-11-03

申请号：US426185

申请日：1995-04-21

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Yuuji Matoba ,  Yoshimasa Nakano ,  Tatsuya Takeuchi ,  Takeshi Miyanaga

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Yuuji Matoba ,  Yoshimasa Nakano ,  Tatsuya Takeuchi ,  Takeshi Miyanaga

IPC分类号： C23C16/448 ,  H01L21/00 ,  A61M33/06 ,  B05C11/00 ,  F22B29/06

CPC分类号： H01L21/67017 ,  C23C16/4485

摘要： A method for controlling an apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an ongoing ashing process. In accordance with the procedure, steam evaporated in a closed steam supply tank is introduced into a vacuum chamber via a pressure reducing mass-flow controller. The temperature of the water in the supply tank, the temperature of the steam in the pipes leading from the supply tank to the mass-flow controller, the temperature of the steam in the pipes from the mass-flow controller to the vacuum chamber and the temperature of the steam in the mass-flow controller itself are all independently controlled such that the temperature in the water tank is equal to or less than the temperature in the pipes leading to and from the mass-flow controller and the temperature in the pipes is less than or equal to the temperature in the mass-flow controller.

摘要翻译： 一种用于控制用于向灰化过程供应蒸汽的装置的方法。 该装置包括由具有良好导热特性的材料形成的封闭的含水容器，用于蒸发水以向容纳正在进行的灰化过程的真空室提供蒸汽。 按照该程序，在封闭的蒸汽供应罐中蒸发的蒸汽通过减压质量流量控制器引入真空室。 供水箱内水的温度，从供水箱通向质量流量控制器的管道中的蒸汽温度，从质量流量控制器到真空室的管道中的蒸汽温度以及 质量流量控制器本身的蒸汽温度都是独立控制的，使得水箱中的温度等于或小于通向质量流量控制器的管道中的温度，并且管道中的温度为 小于或等于质量流量控制器中的温度。

公开(公告)号：US5478403A

公开(公告)日：1995-12-26

申请号：US363987

申请日：1994-12-27

申请人： Keisuke Shinagawa ,  Shuzo Fujimura

发明人： Keisuke Shinagawa ,  Shuzo Fujimura

IPC分类号： G03F7/42 ,  H01J37/32 ,  H01L21/311 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32357 ,  G03F7/427 ,  H01L21/31138 ,  H05H1/46

摘要： A process and apparatus for the ashing treatment in which a plasma generated by activating a gas containing at least oxygen is applied to a material to be treated, on which a coating film of an organic is formed, through a plasma-transmitting plate for capturing charged particles in the plasma and allowing the transmission of neutral active species, to thereby ash the coating film of the organic substance. The material to be treated is placed at a position at which charged particles of a high energy, which have been transmitted through the plasma-transmitting plate without being captured by the plasma-transmitting plate, impinge thereon together with the neutral active species which have been transmitted through the plasma-transmitting plate. Also, the ashing treatment process and apparatus includes a distance-adjusting device for adjusting the distance between the plasma-transmitting plate and the material to be treated, by changing the position of the material to be treated.

摘要翻译： 一种用于灰化处理的方法和装置，其中通过激活含有至少氧气的气体产生的等离子体通过用于捕获带电的等离子体透射板施加到其上形成有机涂层的待处理材料 等离子体中的颗粒并允许中性活性物质的透过，从而使有机物质的涂膜灰化。 待处理的材料被放置在已经通过等离子体透射板传输的高能量的带电粒子而不被等离子体透射板捕获的位置与已经被中和活性物质一起 透射等离子体透射板。 此外，灰化处理过程和装置包括通过改变待处理材料的位置来调节等离子体透射板和待处理材料之间的距离的距离调节装置。

公开(公告)号：US4961820A

公开(公告)日：1990-10-09

申请号：US361178

申请日：1989-06-05

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： C23G5/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.

公开(公告)号：US5998104A

公开(公告)日：1999-12-07

申请号：US972251

申请日：1997-11-18

申请人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

发明人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  B03F7/42 ,  C23C15/00

CPC分类号： G03F7/427

摘要： A method for removing a used organic resist in a downstream ashing apparatus on a silicon semiconductor wafer in which water vapor is added to an oxygen plasma gas generated by microwaves. The addition of the water vapor lowers an activation energy of the ashing reaction and increases the reactive species generated in the plasma. Accordingly, the ashing rate is increased even at a wafer processing temperature as low as 150.degree. C. The addition of water vapor increases the ashing rate for a wide range of the percentage of water content, such as 5 to 80%, allowing easy control of the process. The lowered operating temperature prevents contamination of the semiconductor wafer. Since CF.sub.4 is not used the SiO.sub.2 layer is protected from being undesirably etched and the semiconductor characteristics do not deteriorate.

摘要翻译： 一种在硅半导体晶片上的下游灰化装置中除去使用的有机抗蚀剂的方法，其中水蒸气被添加到由微波产生的氧等离子体气体中。 水蒸汽的添加降低了灰化反应的活化能，并增加了等离子体中产生的反应物质。 因此，即使在低至150℃的晶片加工温度下，灰化速率也增加。添加水蒸汽会增加大范围的含水率（例如5至80％）的灰分率，从而易于控制 的过程。 降低的工作温度防止半导体晶片的污染。 由于不使用CF4，因此保护SiO 2层不被不期望地蚀刻，并且半导体特性不劣化。

公开(公告)号：US4983254A

公开(公告)日：1991-01-08

申请号：US460798

申请日：1990-01-04

申请人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Kenichi Hikazutani

发明人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Kenichi Hikazutani

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： A process for stripping an organic material, which comprises forming gases including a gas containing oxygen and a gas containing a halogen into plasma in a plasma chamber, and supplying an active species of the halogen in the gas formed plasma to a reaction chamber to strip the organic material in the reaction chamber, wherein one mole or more of water vapor based upon two moles of the halogen molecule is fed to the reaction chamber, and the active species of the halogen are removed before contact thereof with the organic material.

公开(公告)号：US6115538A

公开(公告)日：2000-09-05

申请号：US462561

申请日：1995-06-05

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Yuuji Matoba ,  Yoshimasa Nakano ,  Tatsuya Takeuchi ,  Takeshi Miyanaga

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Yuuji Matoba ,  Yoshimasa Nakano ,  Tatsuya Takeuchi ,  Takeshi Miyanaga

IPC分类号： C23C16/448 ,  H01L21/00 ,  A61H33/06 ,  A61H33/12

CPC分类号： H01L21/67017 ,  C23C16/4485 ,  H01L21/6715

摘要： A steam supplying apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an on going ashing process. The closed vessel has a maximum horizontal cross sectional water evaporation area M and a minimum horizontal cross sectional water evaporation area S. The vessel is configured so that M/S

摘要翻译： 一种用于向灰化过程供应蒸汽的蒸汽供应装置。 该装置包括由具有良好导热特性的材料形成的封闭含水容器，用于蒸发水以将蒸汽提供到容纳进行灰化过程的真空室。 密闭容器具有最大水平横截面水蒸发面积M和最小水平横截面水蒸发面积S.容器被配置为使得M / S <8，并且密封容器具有浸没的内表面，其被涂覆有 树脂。 封闭的含水容器在其中的水表面上方的位置处设置有与其连接的蒸汽出口。 该装置还包括用于封闭含水容器的温度控制液槽，并且容器至少部分地浸没在液槽中。

公开(公告)号：US5961775A

公开(公告)日：1999-10-05

申请号：US972435

申请日：1997-11-18

申请人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

发明人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  H05H1/00

CPC分类号： G03F7/427

摘要： A downstream ashing apparatus for removing organic resist from a silicon semiconductor wafer. The apparatus includes a waveguide leading to a microwave cavity. A plasma generating chamber is a part of the cavity, which also includes a quartz plate that is transparent to the microwaves. A device feeds oxygen gas and water vapor to the plasma generating chamber. A plasma is generated by the microwaves from the gas mixture in the plasma generating chamber. On a wall opposite the quartz plate, a plurality of holes is provided which connects the plasma generating chamber to a reaction chamber. Only a reactive species, such as oxygen atoms, generated in the plasma, flows from the plasma generating chamber through the holes and into the reaction chamber. The microwaves do not pass into the reaction chamber. The reactive species chemically reacts with and removes the resist on the semiconductor wafer in the reaction chamber.

摘要翻译： 一种用于从硅半导体晶片去除有机抗蚀剂的下游灰化装置。 该装置包括通向微波腔的波导。 等离子体发生室是空腔的一部分，其还包括对微波是透明的石英板。 装置将氧气和水蒸汽供给到等离子体产生室。 等离子体由等离子体发生室中的气体混合物的微波产生。 在与石英板相对的壁上，提供了将等离子体产生室连接到反应室的多个孔。 只有在等离子体中产生的活性物质，例如氧原子，从等离子体发生室通过孔流入反应室。 微波不会进入反应室。 反应性物质与反应室中的半导体晶片上的抗蚀剂发生化学反应并除去。

公开(公告)号：US5773201A

公开(公告)日：1998-06-30

申请号：US193893

申请日：1994-02-09

申请人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

发明人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Naomichi Abe

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  C23C15/00

CPC分类号： G03F7/427

摘要： A method for removing a used organic resist in a downstream ashing apparatus on a silicon semiconductor wafer in which water vapor is added to an oxygen plasma gas generated by microwaves. The addition of the water vapor lowers an activation energy of the ashing reaction and increases the reactive species generated in the plasma. Accordingly, the ashing rate is increased even at a wafer processing temperature as low as 150.degree. C. The addition of water vapor increases the ashing rate for a wide range of the percentage of water content, such as 5 to 80%, allowing easy control of the process. The lowered operating temperature prevents contamination of the semiconductor wafer. Since CF.sub.4 is not used the SiO.sub.2 layer is protected from being undesirably etched and the semiconductor characteristics do not deteriorate.

公开(公告)号：US5057187A

公开(公告)日：1991-10-15

申请号：US524934

申请日：1990-05-18

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： C23G5/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.