公开(公告)号：US20150221826A1

公开(公告)日：2015-08-06

申请号：US14540969

申请日：2014-11-13

申请人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。