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    Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof
    1.
    发明申请
    Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof 失效
    用于光学应用的薄膜，使用其的发光结构及其制造方法

    公开(公告)号：US20050077526A1

    公开(公告)日：2005-04-14

    申请号：US10503016

    申请日：2003-01-29

    申请人： Jung-Hoon Shin ,  Se-Young Seo ,  Hak-Seung Han

    发明人： Jung-Hoon Shin ,  Se-Young Seo ,  Hak-Seung Han

    IPC分类号： H01S3/06 ,  B82Y20/00 ,  G02B6/02 ,  H01S3/063 ,  H01S3/09 ,  H01S3/16 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01S3/0632 ,  H01S3/09 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/169

    摘要： Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth elements are co-doped. The average size of the silicon nanoclusters is less than 3 nm and the concentration of the rare earth elements is less than 0.1 atomic %. The ratio of the rare earth element concentration to that of silicon nanoclusters is controlled to range from 1 to 10 in the thin film. The thin film emits light by exciting the rare earth elements through electron-hole recombinations in the silicon nanoclusters. According to the present invention, the conditions such as the size and concentration of the silicon nanoclusters, the concentration of the rare earth element, and their concentration ratio are specifically optimized to fabricate optical devices with better performance.

    摘要翻译： 公开了用于光学应用的薄膜，使用其的发光结构及其制造方法。 本发明提供一种用于光学应用的二氧化硅或二氧化硅相关薄膜，其中硅纳米团簇和稀土元素被共掺杂。 硅纳米团簇的平均尺寸小于3nm，稀土元素的浓度小于0.1原子％。 稀土元素浓度与硅纳米团簇的比例在薄膜中控制在1〜10的范围内。 薄膜通过在硅纳米团簇中的电子 - 空穴复合激发稀土元素而发光。 根据本发明，特别优化硅纳米团簇的尺寸和浓度，稀土元素的浓度及其浓度比等条件，以制造具有更好性能的光学器件。

    Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof
    2.
    发明授权
    Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof 失效
    用于光学应用的薄膜，使用其的发光结构及其制造方法

    公开(公告)号：US07030419B2

    公开(公告)日：2006-04-18

    申请号：US10503016

    申请日：2003-01-29

    申请人： Jung-Hoon Shin ,  Se-Young Seo ,  Hak-Seung Han

    发明人： Jung-Hoon Shin ,  Se-Young Seo ,  Hak-Seung Han

    IPC分类号： H01L33/00 ,  H01L21/20

    CPC分类号： H01S3/0632 ,  H01S3/09 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/169

    摘要： Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth elements are co-doped. The average size of the silicon nanoclusters is less than 3 nm and the concentration of the rare earth elements is less than 0.1 atomic %. The ratio of the rare earth element concentration to that of silicon nanoclusters is controlled to range from 1 to 10 in the thin film. The thin film emits light by exciting the rare earth elements through electron-hole recombinations in the silicon nanoclusters. According to the present invention, the conditions such as the size and concentration of the silicon nanoclusters, the concentration of the rare earth element, and their concentration ratio are specifically optimized to fabricate optical devices with better performance.

    摘要翻译： 公开了用于光学应用的薄膜，使用其的发光结构及其制造方法。 本发明提供一种用于光学应用的二氧化硅或二氧化硅相关薄膜，其中硅纳米团簇和稀土元素被共掺杂。 硅纳米团簇的平均尺寸小于3nm，稀土元素的浓度小于0.1原子％。 稀土元素浓度与硅纳米团簇的比例在薄膜中控制在1〜10的范围内。 薄膜通过在硅纳米团簇中的电子 - 空穴复合激发稀土元素而发光。 根据本发明，特别优化硅纳米团簇的尺寸和浓度，稀土元素的浓度及其浓度比等条件，以制造具有更好性能的光学器件。

    Top-pumped waveguide amplifier
    3.
    发明申请
    Top-pumped waveguide amplifier 失效
    顶泵浦波导放大器

    公开(公告)号：US20050122569A1

    公开(公告)日：2005-06-09

    申请号：US10503019

    申请日：2003-01-29

    申请人： Jung-Hoon Shin ,  Hak-Seung Han ,  Nam-Kyoo Park

    发明人： Jung-Hoon Shin ,  Hak-Seung Han ,  Nam-Kyoo Park

    IPC分类号： G02B6/02 ,  H01S3/063 ,  H01S3/091 ,  H01S3/092 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/00

    CPC分类号： H01S3/091 ,  H01S3/063 ,  H01S3/092 ,  H01S3/0933 ,  H01S3/09403 ,  H01S3/0941 ,  H01S3/1608 ,  H01S3/2308

    摘要： The present invention relates to a input light signal waveguide amplifier which is comprised of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements, and more particularly, to a pumping light h 100 waveguide amplifier with higher efficiency enhanced by top-pumping method and focusing means for pumping light. The waveguide amplifier of the present invention comprises of: (a) a substrate; (b) an optical waveguide including: a lower cladding layer formed on the substrate; a core layer which is made of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements on the lower cladding layer and has a refractive index higher than that of the lower cladding; and an upper cladding layer formed on the core layer; and (c) a light source, spaced apart from the waveguide, for optically pumping the waveguide, wherein the waveguide amplifier operates by exciting the rare earth elements through electron-hole combinations in the silicon nanoclusters.

    摘要翻译： 输入光信号波导放大器技术领域本发明涉及一种输入光信号波导放大器，其包括与硅纳米团簇和稀土元素共同掺杂的二氧化硅或二氧化硅相关材料，更具体地涉及具有较高效率的泵浦光h 100波导放大器 泵浦方法和聚焦装置。 本发明的波导放大器包括：（a）衬底; （b）光波导，包括：形成在所述基板上的下包层; 核心层，由在下包层上与硅纳米团簇和稀土元素共同掺杂的二氧化硅或二氧化硅相关材料制成，折射率高于下包层的折射率; 以及形成在所述芯层上的上包层; 和（c）与波导间隔开的光源，用于光学泵浦波导，其中波导放大器通过在硅纳米团簇中的电子 - 空穴组合激发稀土元素来操作。

    Top-pumped waveguide amplifier
    4.
    发明授权
    Top-pumped waveguide amplifier 失效
    顶泵浦波导放大器

    公开(公告)号：US07075708B2

    公开(公告)日：2006-07-11

    申请号：US10503019

    申请日：2003-01-29

    申请人： Jung-Hoon Shin ,  Hak-Seung Han ,  Nam-Kyoo Park

    发明人： Jung-Hoon Shin ,  Hak-Seung Han ,  Nam-Kyoo Park

    IPC分类号： H01S3/00 ,  G02B6/10

    CPC分类号： H01S3/091 ,  H01S3/063 ,  H01S3/092 ,  H01S3/0933 ,  H01S3/09403 ,  H01S3/0941 ,  H01S3/1608 ,  H01S3/2308

    摘要： The present invention relates to a waveguide amplifier which is comprised of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements, and more particularly, to a waveguide amplifier with higher efficiency enhanced by top-pumping method and focusing means for pumping light. The waveguide amplifier of the present invention comprises of: (a) a substrate; (b) an optical waveguide including: a lower cladding layer formed on the substrate; a core layer which is made of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements on the lower cladding layer and has a refractive index higher than that of the lower cladding; and an upper cladding layer formed on the core layer; and (c) a light source, spaced apart from the waveguide, for optically pumping the waveguide, wherein the waveguide amplifier operates by exciting the rare earth elements through electron-hole combinations in the silicon nanoclusters.

    摘要翻译： 本发明涉及一种波导放大器，其包括与硅纳米簇和稀土元素共同掺杂的二氧化硅或二氧化硅相关材料，更具体地，涉及一种通过顶部泵浦方法和聚焦装置增强的具有更高效率的波导放大器 抽光。 本发明的波导放大器包括：（a）衬底; （b）光波导，包括：形成在所述基板上的下包层; 核心层，由在下包层上与硅纳米团簇和稀土元素共同掺杂的二氧化硅或二氧化硅相关材料制成，折射率高于下包层的折射率; 以及形成在所述芯层上的上包层; 和（c）与波导间隔开的光源，用于光学泵浦波导，其中波导放大器通过在硅纳米团簇中的电子 - 空穴组合激发稀土元素来操作。

    Top-pumped optical device
    6.
    发明申请
    Top-pumped optical device 审中-公开
    顶部泵浦光学装置

    公开(公告)号：US20050128570A1

    公开(公告)日：2005-06-16

    申请号：US10507270

    申请日：2003-03-11

    申请人： Jung-Hoon Shin ,  Nam-Kyoo Park

    发明人： Jung-Hoon Shin ,  Nam-Kyoo Park

    IPC分类号： G02B6/02 ,  H01S3/063 ,  H01S3/09 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/00

    CPC分类号： H01S3/0632 ,  H01S3/0617 ,  H01S3/09 ,  H01S3/0933 ,  H01S3/09403 ,  H01S3/0941 ,  H01S3/1603

    摘要： Disclosed is an optical device with enhanced pumping efficiency where light from a pumping light source is efficiently absorbed in a gain medium structure placed under the pumping light. The major characteristic of the optical device of the present invention is that it is top-pumped and a portion in the gain medium structure, which is included in a beam spot of the light source, has a larger area than other portions in the gain medium structure. According to the present invention, a top-pumped optical device with higher pumping efficiency can be provided.

    摘要翻译： 公开了一种具有增强的泵浦效率的光学装置，其中来自泵浦光源的光被有效地吸收在放置在泵浦光下的增益介质结构中。 本发明的光学器件的主要特征在于它是顶部泵浦的，并且包括在光源的光点中的增益介质结构中的一部分具有比增益介质中的其它部分更大的面积 结构体。 根据本发明，可以提供具有较高泵送效率的顶部泵浦光学装置。

    Method of manufacturing thin film transistor array panel
    8.
    发明授权
    Method of manufacturing thin film transistor array panel 有权
    制造薄膜晶体管阵列面板的方法

    公开(公告)号：US07754549B2

    公开(公告)日：2010-07-13

    申请号：US11839683

    申请日：2007-08-16

    申请人： Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

    发明人： Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

    IPC分类号： H01L29/786

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281

    摘要： A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.

    摘要翻译： 制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成非晶硅膜; 在所述非晶硅膜上形成具有压花表面的牺牲膜; 使金属板与牺牲膜接触，并进行热处理以使非晶硅膜结晶，将非晶硅膜改变为多晶硅膜; 去除金属板和牺牲膜; 图案化多晶硅膜以形成半导体; 形成覆盖半导体的栅极绝缘层; 在所述栅极绝缘层上形成栅极线，所述栅极线的一部分与所述半导体重叠; 将导电杂质重掺杂到半导体的部分中以形成源极区和漏极区; 形成覆盖所述栅极线和所述半导体的层间绝缘层; 以及分别在层间绝缘层上形成连接到源区和漏区的数据线和输出电极。

    Gain-providing optical power equalizer
    9.
    发明授权
    Gain-providing optical power equalizer 失效
    增益提供光功率均衡器

    公开(公告)号：US07206124B2

    公开(公告)日：2007-04-17

    申请号：US10508357

    申请日：2003-03-20

    申请人： Nam-Kyoo Park ,  Jung-Hoon Shin

    发明人： Nam-Kyoo Park ,  Jung-Hoon Shin

    IPC分类号： H01S3/00 ,  H04B10/12

    CPC分类号： H04B10/2941 ,  H01S3/063 ,  H01S3/09 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/1603 ,  H01S3/1628 ,  H01S3/2383 ,  H01S5/041 ,  H01S5/50 ,  H01S2301/04 ,  H04B10/25073

    摘要： Disclosed is a gain-providing optical power equalizer which can equalize optical channel output or gain while amplifying signal output. In prior art technologies, optical power equalization has been achieved by attenuating signal output differently depending upon optical channels. However, the optical power equalizer of the present invention is characterized in that it achieves equalization of optical power by giving optical gain differently depending upon optical channels. According to the present invention, the output of optical channels can be adjusted to be flat or as desired without deteriorating signal to noise ratio.

    摘要翻译： 公开了一种增益提供光功率均衡器，其可以在放大信号输出的同时平衡光信道输出或增益。 在现有技术中，通过根据光信道不同地衰减信号输出来实现光功率均衡。 然而，本发明的光功率均衡器的特征在于，通过根据光信道不同地赋予光学增益来实现光功率的均衡。 根据本发明，可以将光通道的输出调节为平坦的或根据需要，而不会降低信噪比。