摘要:
A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required. As a result, the cold cathode electron emission device can be applied to a variety of fields such as a cathode ray tube (CRT), a field emission display (FED), a microwave device, an e-beam lithography, a laser and a sensor. Also, when a logic circuit, a signal processing circuit and a memory device are integrated together with the cold cathode electron emission device on a semiconductor substrate, various high efficiency devices and circuits can be fabricated which are light, thin, short and small.
摘要:
Methods and apparatuses are provided in connection with a transparent electrode on organic photovoltaic cells. A layer of dissolvable material is formed on a substrate. A solution having conductive nanowires suspended therein is deposited on the layer of dissolvable material. The solution is evaporated to form a nanowire mesh. The nanowire mesh is heated to sinter junctions between nanowires in the nanowire mesh. The nanowire mesh is affixed on a layer of one or more organic photovoltaic cells. The layer of dissolvable material is dissolved to deposit the nanowire mesh on the layer of one or more organic photovoltaic cells.
摘要:
A variety of methods, devices, systems and arrangements are implemented involving nanowire meshes. One such method is implemented to include synthesizing metal nanowires in a solution containing a structure-directing agent. The metal nanowires are deposited on a substrate to form a sheet of nanowires. The deposited metal nanowires are heated to a temperature less than about 200 degrees Celsius and for a period of time of about 10 minutes to 60 minutes, thereby removing the structure-directing agent and modifying the electrical conductivity and optical transmittance of the sheet of nanowires.
摘要:
A variety of methods, devices, systems and arrangements are implemented involving nanowire meshes. One such method is implemented to include synthesizing metal nanowires in a solution containing a structure-directing agent. The metal nanowires are deposited on a substrate to form a sheet of nanowires. The deposited metal nanowires are heated to a temperature less than about 200 degrees Celsius and for a period of time of about 10 minutes to 60 minutes, thereby removing the structure-directing agent and modifying the electrical conductivity and optical transmittance of the sheet of nanowires.
摘要:
Methods and apparatuses are provided in connection with a transparent electrode on organic photovoltaic cells. A layer of dissolvable material is formed on a substrate. A solution having conductive nanowires suspended therein is deposited on the layer of dissolvable material. The solution is evaporated to form a nanowire mesh. The nanowire mesh is heated to sinter junctions between nanowires in the nanowire mesh. The nanowire mesh is affixed on a layer of one or more organic photovoltaic cells. The layer of dissolvable material is dissolved to deposit the nanowire mesh on the layer of one or more organic photovoltaic cells.
摘要:
A memory chip having a multiple input/output system enables a memory to have a .times.n, .times.2n or .times.4n I/O system through a simple fuse mask process by using a single memory chip and reduces the consumption of a cell current while having a memory capacity which is the same as in the .times.n or .times.2n I/O system of the conventional art. The multiple input/output memory chip according to the present invention includes a block selecting unit for receiving a source voltage or a column address lowest bit and thereby selectively activating a first block selection signal or a second block selection signal, a column control unit for receiving a source voltage or a column address lowest bit and thereby selectively activating a first column control signal or a second column control signal, a first bank for simultaneously reading or writing n-bit or 2n-bit data in accordance with the first or second column control signal and the first block selection signal, a second bank for simultaneously reading or writing n-bit or 2n-bit data in accordance with the first or second column control signal and the second block selection signal, and a data bus which is connected with first to third fuses and thereby dividable up to four parts.
摘要翻译:具有多重输入/输出系统的存储器芯片使得存储器能够通过使用单个存储器芯片的简单熔丝掩模处理来具有xn,x2n或x4n I / O系统,并且在具有存储器容量的同时减少电池电流的消耗 这与传统技术的xn或x2n I / O系统相同。 根据本发明的多输入/输出存储器芯片包括:块选择单元,用于接收源电压或列地址最低位,从而选择性地激活第一块选择信号或第二块选择信号;列控制单元,用于接收 源电压或列地址最低位,从而选择性地激活第一列控制信号或第二列控制信号,第一存储体,用于根据第一或第二列控制同时读取或写入n位或2n位数据 信号和第一块选择信号,第二组,用于根据第一或第二列控制信号和第二块选择信号同时读取或写入n位或2n位数据,以及数据总线,其与第一块 到第三个保险丝,从而可以分配多达四个部分。